KA BAND TRANSISTOR Search Results

KA BAND TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
MAX4352EUK-T	Rochester Electronics LLC	OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

KA BAND TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NEC D74 Abstract: transistor D113 NEC D76 NE32900 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70 Text: DATA SHEET PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped	Original	PDF	NE32900 NE32900 NEC D74 transistor D113 NEC D76 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70
HEMT 36 ghz transistor Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor Text: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with	Original	PDF	EC2827 40GHz EC2827 18GHz 40GHz DSEC28277003 HEMT 36 ghz transistor low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
NEC D288 Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116 Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent	Original	PDF	NE32984D NE32984D NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
XP1072-BD Abstract: XP1072-BD-000V ID232 DM6030HK 152.01 VD55 Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 4W Power Amplifier 22.0 Small Signal Gain +35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1072-BD 16-Feb-10 MIL-STD-883 XP1072-BD XP1072-BD-000V ID232 DM6030HK 152.01 VD55
ka-band transistor Abstract: P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ka-band bare Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2006 - Rev 23-Feb-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1026-BD 23-Feb-07 MIL-STD-883 XP1026-BD-000V XP1026-BD-EV1 XP1026-BD ka-band transistor P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD-000V XP1026-BD-EV1 ka-band bare
P1026 Abstract: P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ka-band transistor Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD August 2007 - Rev 30-Aug-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1026-BD 30-Aug-07 MIL-STD-883 XP1026-BD-000V XP1026-BD-EV1 XP1026-BD P1026 P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD-000V XP1026-BD-EV1 ka-band transistor
DM6030HK Abstract: No abstract text available Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD January 2009 - Rev 23-Jan-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	23-Jan-09 P1073-BD MIL-STD-883 aBD-000V XP1073-BD-EV1 XP1073-BD DM6030HK
ka-band transistor Abstract: No abstract text available Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD August 2007 - Rev 30-Aug-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	30-Aug-07 P1026-BD MIL-STD-883 XP1026-BD-000V XP1026-BD-EV1 XP1026-BD ka-band transistor
Untitled Abstract: No abstract text available Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2006 - Rev 23-Feb-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1026-BD 23-Feb-07 MIL-STD-883 XP1026-BD-000V XP1026-BD-EV1 XP1026-BD
Untitled Abstract: No abstract text available Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2009 - Rev 15-Feb-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1026-BD 15-Feb-09 MIL-STD-883 XP1026-BD-000V XP1026-BD-EV1 XP1026-BD
max cw 4004 Abstract: XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD XP1026-BD-000V ID213 Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1026-BD 25-Jan-10 MIL-STD-883 pa026-BD-EV1 XP1026-BD max cw 4004 XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD-000V ID213
P1027 Abstract: P1027-BD ka-band transistor 30SPA0536 DM6030HK XP1027-BD XP1027-BD-000V XP1027-BD-EV1 VG07 Text: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3	Original	PDF	P1027-BD 25-Jan-10 MIL-STD-883 XP1027-BD P1027 P1027-BD ka-band transistor 30SPA0536 DM6030HK XP1027-BD-000V XP1027-BD-EV1 VG07
Untitled Abstract: No abstract text available Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD March 2008 - Rev 08-Mar-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1072-BD 08-Mar-09 MIL-STD-883 XP1072-BD-EV1 XP1072-BD
Untitled Abstract: No abstract text available Text: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2009 - Rev 11-Mar-09 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3	Original	PDF	P1027-BD 11-Mar-09 MIL-STD-883 XP1027-BD-000V XP1027-BD-EV1 XP1027-BD

XP1073-BD Abstract: xp1073 DM6030HK XP107 Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1073-BD 16-Feb-10 MIL-STD-883 XP1073-BD XP1073-BD xp1073 DM6030HK XP107
DM6030HK Abstract: XP1072-BD Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD January 2009 - Rev 29-Jan-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	29-Jan-09 P1072-BD MIL-STD-883 viaBD-000V XP1072-BD-EV1 XP1072-BD DM6030HK
BD 139 140 Abstract: P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ID-2250 Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2009 - Rev 19-Jan-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	P1026-BD 19-Jan-09 MIL-STD-883 XP1026-BD-000V XP1026-BD-EV1 XP1026-BD BD 139 140 P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD-000V XP1026-BD-EV1 ID-2250
transistor NEC D 882 p Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor NE29200 NE292 574 nec low noise, hetero junction fet nec, hetero junction transistor transistor NEC 882 p Text: DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE29200 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and	Original	PDF	NE29200 NE29200 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p nec d 882 p transistor NE292 574 nec low noise, hetero junction fet nec, hetero junction transistor transistor NEC 882 p
transistor NEC D 586 Abstract: NEC D 586 Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility	OCR Scan	PDF	NE321000, NE29200 NE321000 NE29200 NE321000 P14270E transistor NEC D 586 NEC D 586
NEC Ga FET marking L Abstract: U/25/20/TN26/15/850/NE32984D Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm	OCR Scan	PDF	NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D
nec 151 Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900 Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.	OCR Scan	PDF	NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor
2c5339 Abstract: transistor 2sc 1014 2C5339HV 2C6193 Text: 4bE D • b3b7254 00^2^73 2 ■ M O T b T - ^ “0 5 MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA kAä DM0 2C5339HV Chip NPN Silicon Medium-Power Transistor mini Discrete Military Operation . . .(or use in switching and wide-band amplifier applications	OCR Scan	PDF	b3b72S4 2C5339HV 2C6193 2c5339 transistor 2sc 1014
Transistor NEC K 3654 Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS	OCR Scan	PDF	NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
NE1280400 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in^tm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz	OCR Scan	PDF	NE1280100 NE1280200 NE1280400 NE1280100 NE1280 NE1280400 cell0100

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KA BAND TRANSISTOR Search Results

KA BAND TRANSISTOR Result Highlights (5)

KA BAND TRANSISTOR Datasheets Context Search

NEC D74

HEMT 36 ghz transistor

NEC D288

XP1072-BD

ka-band transistor

P1026

DM6030HK

ka-band transistor

Untitled

Untitled

max cw 4004

P1027

Untitled

Untitled

XP1073-BD

DM6030HK

BD 139 140

transistor NEC D 882 p

transistor NEC D 586

NEC Ga FET marking L

nec 151

2c5339

Transistor NEC K 3654

NE1280400