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    Samsung Semiconductor KM416C1200CJ-6

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    Quest Components KM416C1200CJ-6 216
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    Samsung Semiconductor KM416C1204CT-45

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    Samsung Semiconductor KM416C1204CJ-50

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    Samsung Semiconductor KM416C1200BT-L6

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    Samsung Semiconductor KM416C1204CJ-5

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    KM416C1 Datasheets (155)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416C1000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM416C1000B Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000BJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BJ-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000BJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BJL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000BT-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BT-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BT-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000BTL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BTL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BTL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000C Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000CJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000CJ-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000CJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000CJ-6 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000CJ-L-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    ...

    KM416C1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1000B

    Abstract: 3020C
    Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BT 16Bit 1Mx16 7Tb4142 DD3D23b C1000B 3020C

    km416c1200j

    Abstract: km416c1200 MAS 10 RCD 71FC
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its


    OCR Scan     		PDF KM416C1200 KM416C1200-7 130ns KM416C1200-8 150ns KM416C1200-10 100ns 180ns cycles/16ms km416c1200j MAS 10 RCD 71FC

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8


    OCR Scan     		PDF KM416C1204A/A-L/A-F KM416C1204A-6/A-L6/A-F6 110ns KM416C1204A-7/A-L7/A-F7 130ns KM416C1204A-8/A-L8/A-F8 150ns cycle/16m cycle/128msCLE 71b4142

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 GGlb343 S73 ■ SMGK KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its


    OCR Scan     		PDF GGlb343 KM416C1000 KM416C1000 130ns KM416C1000-8 150ns KM416C1000-10 100ns 180ns KM416C1000-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D KM416C1200L/LL • 7^4142 DDlbmO TG6 « S H C K CMOS DRAM 1 M x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200L/LL is a CMOS high speed 1,048,576 b itx 1 6 D ynam ic Random A ccess Memory.


    OCR Scan     		PDF KM416C1200L/LL KM416C1200L/LL KM416C1200L/LL-7 130ns KM416C1200L/LL-8 KM416C1200LVLL-10 100ns 180ns Dlb432

    KM416C1200

    Abstract: TCA 1085 km416c1200j
    Text: CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The S am sung KM416C1200 is a CMOS h ig h speed 1,048,576 bit x 16 D ynam ic Random A ccess Memory. Its de sig n is op tim ize d fo r high pe rform ance a p p lica tio n s


    OCR Scan     		PDF KM416C1200 KM416C1200-7 KM416C1200-8 KM416C1200-10 130ns 150ns 180ns KM416C1200 TCA 1085 km416c1200j

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 64ms/16ms

    la 1004a

    Abstract: No abstract text available
    Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS ORAM 1 M x 1 6B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		PDF KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A 1Mx16 la 1004a

    Untitled

    Abstract: No abstract text available
    Text: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance


    OCR Scan     		PDF KM416C1004A/A-L/A-F KM416C1004A/A-L/A-F 42-LEAD 44-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM416C1OOOA/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 60ns 15ns 110ns KM416C1000A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns 150ns KM416C1000A-6/A-L6/A-F6


    OCR Scan     		PDF KM416C1OOOA/A-L/A-F KM416C1000A/A-L/A-F KM416C1 DQ1-DQ16 42-LEAD 44-LEAD

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C1200 KM416C1200-7 KM416C1200-8 KM416C1200-10 100ns 130ns 150ns 180ns KM416C1200

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1M x 16Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 16Bit 1Mx16 DQ8DQ15

    KM416C1000-7

    Abstract: No abstract text available
    Text: KM416C1000 CMOS DRAM 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance applications


    OCR Scan     		PDF KM416C1000 KM416C1000-7 KM416C1000-8 KM416C1000-10 100ns 130ns 150ns 180ns KM416C1000

    XMP 820

    Abstract: C1204B 3Q55
    Text: KM416C1004BJ ELECTRONICS CMOS D R A M 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1004BJ 16Bit 1Mx16 003Q2bb XMP 820 C1204B 3Q55

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 DG23333

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C1200 KM416C1200 130ns KM416C1200-8 KM416C1200-10 KM416C1200-7 100ns 180ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C156B/BL/BLL 256K x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES The S am sun g K M 4 16 C 1 56 B /B L7 B L L is a C M O S high • Performance range: tflC s p e e d 2 6 2 ,1 4 4 b it x 1 6 D y n a m ic R a n d o m A c c e s s


    OCR Scan     		PDF KM416C156B/BL/BLL 110ns 150ns 40-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1004BJ 1Mx16 DD302t4 D0302bS Q03D2bb

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BJ 1Mx16Bit 1Mx16 71bm4E 16C1000BJ 40SOJ 1000B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM416C1000 CMOS DRAM 1M x16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C1000 is a CMOS high speed 1,048,576 b it x 16 D ynam ic Random A ccess Memory. Its de sig n is o p tim ized fo r high pe rform ance a p p lica tio n s


    OCR Scan     		PDF KM416C1000 KM416C1000 130ns 150ns 100ns 180ns KM416C1000-7 KM416C1000-8 KM416C1000-10

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h ?E KM416C157A ]> • 7Tb4142 0015^21 400 ■■ S M G K CMOS DRAM 256K x1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C157A is a CMOS high speed 262,144 b itx 1 6 Dynamic Random Access Memory. It's


    OCR Scan     		PDF KM416C157A 7Tb4142 KM416C157A 0015R41 40-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM416C1200BJ C M O S DRAM ELECTRO NICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1200BJ 1Mx16 7Tb414E GD3D331

    KM416C1200A

    Abstract: KM416C1200AT KM416C1200AJ
    Text: CMOS DRAM KM416C1200A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tR C KM416C1200A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1200A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1200A-8/A-L8/A-F8 80ns 20ns


    OCR Scan     		PDF KM416C1200A/A-L/A-F KM416C1200A/A-L/A-F KM416C1200A/A- 42-LEAD 44-LEAD KM416C1200A KM416C1200AT KM416C1200AJ

    KM416C1204AJ

    Abstract: km416c1204a 1076 GE
    Text: CMOS DRAM KM416C1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1204A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance


    OCR Scan     		PDF KM416C1204A/A-L/A-F KM416C1204A-6/A-L6/A-F6 KM416C1204A-7/A-L7/A-F7 KM416C1204A-8/A-L8/A-F8 110ns 130ns 150ns KM416C1204A/A-L/A-F KM416C1204AJ km416c1204a 1076 GE