KM416Q1004CT Search Results

KM416Q1004CT Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM416Q1004CT-L-6		Samsung Electronics	Low Power 1M x 16-Bit CMOS Dynamic RAM with EDO		Original	PDF
KM416Q1004CT-L-7		Samsung Electronics	Low Power 1M x 16-Bit CMOS Dynamic RAM with EDO		Original	PDF

KM416Q1004CT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: KM416U Q 1004CT(E)-L CMOS DRAM 1Mx16 EDO DRAM (LP 3.0V / 2.5V) Revision 0.0 Jan. 1998 KM416U(Q)1004CT(E)-L Revision History Advanced spec.(July, 1997) Preliminary spec.(Nov., 1997) . Changed the followings. - VIH=1.8V from 1.7V @ KM416Q1004CT (E)-L. - Vih=1.9V from 1.7V @ KM416Q1004CT (E)-L.	Original	KM416U 1004CT 1Mx16 KM416Q1004CT 220uA 350uA KM416U1004CT	PDF
Untitled Abstract: No abstract text available Text: KM416U Q 1004CT(E)-L CMOS DRAM 1M x16 ED O D R AM (L P 3 . 0 V / 2 .5 V ) Revision 0.0 Jan. 1998 ELECTRONICS KM416U(Q)1004CT(E)-L Revision History Advanced spec.(July, 1997) Preliminary spec.(Nov., 1997) . Changed the followings. - VIH=1,8V from 1,7V @ KM416Q1004CT (E)-L.	OCR Scan	KM416U 1004CT KM416Q1004CT 350uA KM416U1004CT 300uA KM416Q1004CT	PDF
4MB DRAM Abstract: 4MX16 1MX16 Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .	OCR Scan	KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16	PDF
Untitled Abstract: No abstract text available Text: KM416U Q 1004CT(E)-L CMOS DRAM Low Power 1Mx 16Bit CMOS Dynamic RAM with EDO DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs with low operating & self refresh voltage. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+3.0W	OCR Scan	KM416U 1004CT 16Bit 1Mx16 KM416U1004CT	PDF