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    Untitled

    Abstract: No abstract text available
    Text: KM416S4020B CMOS SDRAM Revision History Revision .1 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM416S4020B PC100

    KM416S4020

    Abstract: KM416S4020BT-G10
    Text: KMM366S804BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM366S804BTL 200mV. 66MHz KM416S4020 KM416S4020BT-G10

    Untitled

    Abstract: No abstract text available
    Text: KM416S4020B CMOS SDRAM Revision History Revision .1 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM416S4020B PC100

    Untitled

    Abstract: No abstract text available
    Text: KMM366S404BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.


    Original     		PDF KMM366S404BTL 200mV. 66MHz

    Untitled

    Abstract: No abstract text available
    Text: KMM366S804BTL PC66 SDRAM MODULE KMM366S804BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S804BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S804BTL KMM366S804BTL 8Mx64 4Mx16, 400mil 168-pin

    KM416S4020

    Abstract: No abstract text available
    Text: KM416S4020B CMOS SDRAM 2M x 16Bitx 2 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM416S4020A is 67,108,864 bits synchronous high data • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Dual banks operation rate Dynamic RAM organized as 2 x 2,097,152 words by 16


    OCR Scan     		PDF KM416S4020B 16Bitx KM416S4020BT-G/F8 KM416S402OBT-G/FH KM416S4020BT-G/FL KM416S4020BT-G/F10 KM416S4020A 10/AP KM416S4020

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030

    KM416S4020B

    Abstract: No abstract text available
    Text: KM416S4020B CMOS SDRAM R evision H istory Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    OCR Scan     		PDF KM416S4020B PC100 10/AP KM416S4020B

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT

    Untitled

    Abstract: No abstract text available
    Text: KMM366S404BTL PC66 SDRAM MODULE KMM366S404BTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S404BTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S404BTL KMM366S404BTL 4Mx64 4Mx16, 400mil 168-pin