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    KM416S4030C Search Results

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    KM416S4030C Price and Stock

    Samsung Semiconductor KM416S4030CT-GB

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    Samsung Semiconductor KM416S4030CT-G10

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    Samsung Semiconductor KM416S4030CT-G8

    IC,SDRAM,4X1MX16,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components KM416S4030CT-G8 587
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    Samsung Semiconductor KM416S4030CT-G/F10

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    Quest Components KM416S4030CT-G/F10 125
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    KM416S4030C Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416S4030C Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-F10 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-F7 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Original PDF
    KM416S4030CT-F8 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 125MHz Original PDF
    KM416S4030CT-FH Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-FL Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-G Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G7 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Original PDF
    KM416S4030CT-G8 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 125MHz Original PDF
    KM416S4030CT-GF10 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/F7 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/F8 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/FA Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/FH Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/FL Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-GH Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-GL Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-L10 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF

    KM416S4030C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM416S4030C

    Abstract: 1M Synchronous DRAM samsung
    Text: KM416S4030C Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Oct., 1998 • PC133 first published. REV. 0 Oct. '98 Preliminary PC133 CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030C is 67,108,864 bits synchronous high data


    Original     		PDF KM416S4030C PC133 16Bit KM416S4030C A10/AP 1M Synchronous DRAM samsung

    KM416S4030C

    Abstract: No abstract text available
    Text: KM416S4030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2 N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF KM416S4030C 16Bit KM416S4030C

    KMM464S824CT1

    Abstract: No abstract text available
    Text: KMM464S824CT1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S824CT1 PC100 144pin SDRAM SODIMM KMM464S824CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM464S824CT1 PC100 144pin KMM464S824CT1 8Mx64 4Mx16,

    sekisui 5760

    Abstract: sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive
    Text: SiS540 Super 7 2D/3D Ultra-AGPTM Single Chipset Content Figure .vi Table. vii


    Original     		PDF SiS540 sekisui 5760 sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive

    KMM366S424CTF-G0

    Abstract: No abstract text available
    Text: PC66 SDRAM MODULE KMM366S424CTF KMM366S424CTF SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM366S424CTF KMM366S424CTF 4Mx64 4Mx16, 400mil 168-pin KMM366S424CTF-G0

    29f016a

    Abstract: NC32 74HCT125 ADDR12 TG22-3506ND MDIO10 TP181 VSS198 ADDR15 1R58
    Text: 5 4 3 2 1 +5V This document is distributed in the hope that it will be useful, but WITHOUT ANY WARRANTY; without even the implied warranty of MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. U1 DS1813/TO92 +5V +5V 1 VCC 14 NC 4 7 GND OUT 11 GND OUT1 8


    Original     		PDF DS1813/TO92 50Mhz ADDR10 ADDR11 ADDR12 ADDR13 ADDR14 ADDR15 29f016a NC32 74HCT125 ADDR12 TG22-3506ND MDIO10 TP181 VSS198 ADDR15 1R58

    KMM366S424CTS-gl

    Abstract: KMM366S424CTS-G8 KMM366S424CTS-GH 4Mx64
    Text: KMM366S424CTS PC100 SDRAM MODULE KMM366S424CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM366S424CTS PC100 KMM366S424CTS 4Mx64 4Mx16, 400mil 168-pin KMM366S424CTS-gl KMM366S424CTS-G8 KMM366S424CTS-GH

    gmZ4S

    Abstract: 5400 samsung lcd monitor circuit diagram C0012-DSR-01C gmZ4U hyundai L19 MC141584 genesis lcd controller dram FSDATA45 lg crt monitor circuit diagram GM72V161621ET
    Text: DATA SHEET gmZ4 C0012-DAT-01C July 2000 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 2150 Gold Street, Alviso, CA USA 95002 Tel: (408) 262-6599 Fax: (408) 262-6365 www.genesis-microchip.com / [email protected]


    Original     		PDF C0012-DAT-01C DAT-0012-A C0012-DAT-01B 256-pin gmZ4S 5400 samsung lcd monitor circuit diagram C0012-DSR-01C gmZ4U hyundai L19 MC141584 genesis lcd controller dram FSDATA45 lg crt monitor circuit diagram GM72V161621ET

    Untitled

    Abstract: No abstract text available
    Text: KMM464S424CT1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S424CT1 PC100 144pin SDRAM SODIMM KMM464S424CT1 SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM464S424CT1 PC100 144pin KMM464S424CT1 4Mx64 4Mx16,

    nc10 samsung

    Abstract: 278R33 78R33 SP232 RPACK 10k x 9 29EE010 1C651 samsung lcd JTAG nc10 samsung power PP36
    Text: E D C B A SNDS200 Board Ver2.0 NetMCU : S3C4520A DRAM HDLC - 8MB SDRAM - EDO Support - 1 Bank - MCU Input Clock(10MHz) - USB Input Clock(10MHz) - FilterLogic Page2 ROM - 1 Channel RS232 I/F - 1 Channel V.35 I/F - DSUB25 Conn Page3 Page4 hdlc nDTRB nRTSB


    Original     		PDF SNDS200 S3C4520A) 10MHz) RS232 DSUB25 BLM41P02 LCON14 SNDS200 nc10 samsung 278R33 78R33 SP232 RPACK 10k x 9 29EE010 1C651 samsung lcd JTAG nc10 samsung power PP36

    KMM464S424CT1-FL

    Abstract: KMM464S424CT1-FH
    Text: Preliminary PC 100 144pin SDRAM SODIMM KMM464S424CT1 KMM464S424CT1 SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM464S424CT1 is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM464S424CT1 consists of four CMOS 4M x 16 bit


    Original     		PDF 144pin KMM464S424CT1 KMM464S424CT1 4Mx64 4Mx16, 400mil 144-pin KMM464S424CT1-FL KMM464S424CT1-FH

    KMM464S824CT1-FH

    Abstract: KMM464S824CT1-FL
    Text: Preliminary PC100 144pin SDRAM SODIMM KMM464S824CT1 KMM464S824CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM464S824CT1 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 144pin KMM464S824CT1 KMM464S824CT1 8Mx64 4Mx16, 400mil 144-pin KMM464S824CT1-FH KMM464S824CT1-FL

    gmZ4S

    Abstract: Genesis microchip dat gmZ4U MC141584 DSR-0012 HITACHI microcontroller 0xc0 genesis video controller gm72v161621et Genesis Microchip osd DAT-0012-B
    Text: PRELIMINARY DATA SHEET gmZ4 DAT-0012-B December 1999 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 1871 Landings Drive, Mountain View, CA, USA 94043 Tel: (650) 428-4277 Fax (650) 428-4288


    Original     		PDF DAT-0012-B DAT-0012-B DAT-0012-A DSR-0012 336-pin 256-pin gmZ4S Genesis microchip dat gmZ4U MC141584 HITACHI microcontroller 0xc0 genesis video controller gm72v161621et Genesis Microchip osd

    Samsung S3C4510

    Abstract: Samsung S3C4530 psos prepc S3C4510 78R33 regulator s3c4530 samsung sx1 led large 278R33 pSOS 78R3
    Text: 40-S3-C4520A-072001 APPLICATION NOTE S3C4520A 32-Bit CMOS Microcontroller Revision 0 S3C4520A 32-BIT CMOS MICROCONTROLLER APPLICATION NOTES Revision 0 Important Notice The information in this publication has been carefully checked and is believed to be entirely


    Original     		PDF 40-S3-C4520A-072001 S3C4520A 32-Bit S3C4520A' \bsps\S3C4520A\src S3C4520A Samsung S3C4510 Samsung S3C4530 psos prepc S3C4510 78R33 regulator s3c4530 samsung sx1 led large 278R33 pSOS 78R3

    KMM366S824CT-G8

    Abstract: KMM366S824CT-GH KMM366S824CT-GL
    Text: KMM366S824CT PC100 Unbuffered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May 1999 PC100 Unbuffered DIMM KMM366S824CT KMM366S824CT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM366S824CT PC100 KMM366S824CT 8Mx64 4Mx16, 400mil KMM366S824CT-G8 KMM366S824CT-GH KMM366S824CT-GL

    KM416S4030C

    Abstract: No abstract text available
    Text: KM416S4030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2 N v a lu e (1 0 m A ) is c h a n g e d to 1 2 m A . Revision .2 (June 1998) - tSH (- 1 0 b in n in g ) is re v is e d . REV. 2 June '98 ELECTRONICS Preliminary CMOS SDRAM KM416S4030C


    OCR Scan     		PDF KM416S4030C 16Bit A10/AP KM416S4030C

    Untitled

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT SDRAM MODULE PC100 Unbuffered SDRAM SODIMM 144pin SPD Specification REV. 1.50 November 1998 REV. 1.50 Nov. 1998 SERIAL PRESENCE DETECT SDRAM MODULE KMM464S424CT1-FH/FL •Organization : 4MX64 •Composition : 4MX16 *4 •Used component p a rt# : KM416S4030CT-FH/FL


    OCR Scan     		PDF PC100 144pin) KMM464S424CT1-FH/FL 4MX64 4MX16 KM416S4030CT-FH/FL 4K/64ms 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S403OC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM416S4030C 16Bit KM416S403OC

    Untitled

    Abstract: No abstract text available
    Text: PC66 SDRAM MODULE KM M366S424CTF KMM366S424CTF SDRAM DIMM 4M x6 4 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous D RAM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF M366S424CTF KMM366S424CTF 4Mx16, 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM464S824CT_ PC100 144pin SDRAM SODIMM Revision History Revision .1 November 1998 - Corrected PCB Height as 1.25inch @ PACKAGE Dimensions. REV. 1 Nov. 1998 Preliminary KMM464S824CT_ PC100 144pin SDRAM SODIMM


    OCR Scan     		PDF KMM464S824CT_ PC100 144pin 25inch KMM464S824CT 8Mx64 4Mx16,

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030

    Untitled

    Abstract: No abstract text available
    Text: PC66 SDRAM MODULE KM M366S424CTF KMM366S424CTF SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF M366S424CTF KMM366S424CTF 4Mx64 4Mx16, 400mil 168-pin

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT