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    KM48V8004B Search Results

    KM48V8004B Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM48V8004B Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8004BK-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8004BK-5 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 50ns Original PDF
    KM48V8004BK-6 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 60ns Original PDF
    KM48V8004BK-L-45 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8004BKL-45 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 45ns Original PDF
    KM48V8004BKL-5 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 50ns Original PDF
    KM48V8004BK-L-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8004BKL-6 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 60ns Original PDF
    KM48V8004BS-45 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 45ns Original PDF
    KM48V8004BS-5 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 50ns Original PDF
    KM48V8004BS-6 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8004BSL-45 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 45ns Original PDF
    KM48V8004BS-L-5 Samsung Electronics 8M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V8004BSL-5 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 50ns Original PDF
    KM48V8004BSL-6 Samsung Electronics 8M x 8-Bit CMOS dynamic RAM with extended data out, 60ns Original PDF

    KM48V8004B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM48V8004B

    Abstract: KM48V8104B
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM48V8004B, KM48V8104B 400mil KM48V8004B KM48V8104B PDF

    KM48V8004B

    Abstract: KM48V8104B
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM48V8004B, KM48V8104B 400mil KM48V8004B KM48V8104B PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM372F80 8 3BK/BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6


    Original     		KMM372F80 100Max 54Max) 200Max 08Max) KMM372F803BK/BS KM48V8104BK, KM48V8104BS. KMM372F883BK/BS KM48V8004BK, PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F80 8 3BK/BS Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM374F80(8)3BK/BS Revision History Version 0.0 (Dec, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		KMM374F80 8Mx72 8Mx72bits PDF

    KMM372F803BK

    Abstract: KMM372F803BS KMM372F883BK KMM372F883BS
    Text: KMM372F80 8 3BK/BS DRAM MODULE KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs


    Original     		KMM372F80 8Mx72bits 400mil 168-pin 100Max 54Max) KMM372F803BK KMM372F803BS KMM372F883BK KMM372F883BS PDF

    nk401

    Abstract: AM29V800 S3C3410 S3C3410X JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SMDK40100 SVC32
    Text: 40-S3-C3410X-062001 APPLICATION NOTE S3C3410X 16-Bit CMOS Microcontrollers Revision 0 S3C3410X RISC MICROPROCESSOR 1 ABOUT SMDK40100 BOARD ABOUT SMDK40100 BOARD SYSTEM OVERVIEW SMDK40100 Samsung MCU Development Kit for S3C3410X is a platform that is suitable for code development


    Original     		40-S3-C3410X-062001 S3C3410X 16-Bit S3C3410X SMDK40100 SMDK40100 16/32-bit nk401 AM29V800 S3C3410 JEENI ARM7 pin discription and programming ka78r33 set date pSOS pROBE SVC32 PDF

    KMM372F803BK

    Abstract: KMM372F803BS KMM372F883BK KMM372F883BS
    Text: KMM372F80 8 3BK/BS DRAM MODULE KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs


    Original     		KMM372F80 8Mx72bits 400mil 168-pin 100Max 54Max) KMM372F803BK KMM372F803BS KMM372F883BK KMM372F883BS PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F80 8 3BK2 KMM366F80(8)3BK2 EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)3BK2 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)3BK2 consists of eight CMOS 8Mx8bits


    Original     		KMM366F80 8Mx64bits 400mil 168-pin KMM366F803BK2 KMM366F883BK2 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F80 8 3BK1 KMM374F80(8)3BK1 EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F80(8)3BK1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung


    Original     		KMM374F80 8Mx72bits 400mil 168-pin KMM374F803BK1 KMM374F883004 PDF

    31DQ6

    Abstract: No abstract text available
    Text: KM48V8004B, KM48V8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    OCR Scan     		KM48V8004B, KM48V8104B 31DQ6 PDF

    8104b

    Abstract: No abstract text available
    Text: Preliminary SPEC CMOS DRAM KM48V8004B, KM48V8104B 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 8,3 88,60 8 x 8 bit Extended D ata O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access of m em o ry cells w ith in the sam e row. R efresh cycle 4 K Ref. o r 8K Ref. , access tim e (-4, -5 o r -6), po w e r co n su m p tio n (N o rm a l or


    OCR Scan     		KM48V8004B, KM48V8104B 8104b PDF

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16 PDF

    trw 810

    Abstract: No abstract text available
    Text: DRAM M ODULE KMM374F80 8 3BK1 Unbuffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F80(8)3BK1 Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Rem oved tw o A C param eters t CACP(access tim e from CAS) and tAAP(access tim e from col. addr.) in AC C H A R A C T E R IS T IC S .


    OCR Scan     		KMM374F80 8Mx72 374F80 8Mx72bits 400mil 08Max) trw 810 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM 372F80 8 3BK/BS DRAM MODULE Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 KMM 372F80(8)3BK/BS DRAM MODULE Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t c acp (access time from CAS) and tAAP (access time from col. addr.) in A C C H A R A C T E R IS T IC S .


    OCR Scan     		372F80 8Mx72 KMM372F80 8Mx72bits 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F80 8 3BK/BS KMM372F80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F80(8)3B consists of nine CMOS 8Mx8bits DRAMs


    OCR Scan     		KMM372F80 8Mx72bits 400mil 168-pin KMM372F803BK KMM372F883BS 104ns PDF

    k2624

    Abstract: No abstract text available
    Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#


    OCR Scan     		KM41C4000D# C4000D KM41V4000D# KM41V4000W-L KM44C1000D# KM44C10OOD KM44C1003D# KM44C1004D# KM44C1004D KM44C1005D# k2624 PDF

    dram module

    Abstract: No abstract text available
    Text: DRAM MODULE KMM 366F80 8 3BK3 8Mx64 Unbuffered DIMM (8Mx8 base) Revision 0.0 Nov. 1997 -1 - Rev. 0.0 ( Nov. 19 97) DRAM MODULE KMM 366F80(8)3BK3 Re v i s i o n H is to ry Ve rs i on 0 . 0 (N ov . 1 997 ) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F80(8)3BK to KMM366F80(8)3BK3 caused by PCB revision .


    OCR Scan     		366F80 8Mx64 KMM366F80 8Mx64bits dram module PDF