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    KM616V1 Price and Stock

    Samsung Semiconductor KM616V1002BJ-8

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    Bristol Electronics KM616V1002BJ-8 1,865
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    Quest Components KM616V1002BJ-8 1,492
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    Samsung Semiconductor KM616V1002BT-8

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    SEC/98+ KM616V1000BLT-7L

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    Samsung Semiconductor KM616V1002AT-12

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    KM616V1002AT-12 61
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    Samsung Semiconductor KM616V1000BLTI-7L

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    Quest Components KM616V1000BLTI-7L 1,596
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    KM616V1 Datasheets (98)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V1000BLR-7L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLRI-7L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLRI-8L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLT-7L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLTI-7L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLTI-8L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1002AIJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIT-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIT-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-17 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF

    KM616V1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616V1002A

    Abstract: SRAM sheet samsung
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A SRAM sheet samsung

    KM616V1002B

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History


    Original     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B

    KM616U1000BLT-10L

    Abstract: KM616U1000BLTI-10L KM616U1000B KM616V1000B KM616V1000BLT-7L
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0


    Original     		PDF KM616V1000B, KM616U1000B 100ns KM616V1000B KM616U1000BLT-10L KM616U1000BLTI-10L KM616V1000BLT-7L

    KM616V1002A

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A

    KM616V1002B

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History


    Original     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B

    Untitled

    Abstract: No abstract text available
    Text: for AT&T CMOS SRAM KM616V1002C/CL, KM616V1002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 48-fine KM616V1002C-Z KM616V1002C-F I/O16 25/Typ.

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17: KM616V1002A-20 KM616VF I/016

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 June-1997 44-SOJ-400 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002C/CL, KM616V1002CI/CLI PRELIMINARY CMOS SRAM Document Tills 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    OCR Scan     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 KM616V1002 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002C/CL, KM616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Prelim inary Rev. 1.0


    OCR Scan     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 48-fine

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 200/195/190mA 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002A 576-bit

    256x16* STATIC RAM

    Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
    Text: Advanced information KM616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-400 256x16* STATIC RAM 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP

    SRAM 64Kx16

    Abstract: No abstract text available
    Text: Preliminary KM616V1OOOBLI / Ll-L CMOS SRAM 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C The KM616V1000BLI/LI-L is a 1,048,576-bit high • Fast Access Time : 70, 100 ns max.


    OCR Scan     		PDF KM616V1OOOBLI 64Kx16 360nW 216mW I/01-I/08 I/09-I/016 KM616V1000BLTI/LTI-L: 400mil KM616V1000BLRI/LRI-L: SRAM 64Kx16

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM{3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max.) • Low Power Dissipation Standby (T T l) : 30mA(Max ) (CMOS) : 50mA(Max.) 0.5mA(Max.) - L-Ver. only


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL 200mA 195mA 190mA KM616V1002BJ 44-SOJ-4GO KM616V1002BT

    km616u1000b

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16


    OCR Scan     		PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP

    KM616V1002A

    Abstract: N-319
    Text: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		PDF KM616V1002A KM616V1002A-12 KM616V1002A-15 KM616V1002A-17: 180mA KM616V1002A-20 I/O9-I/O16 KM616V1002AJ 44-SOJ-400 KM616V1002AT KM616V1002A N-319

    Untitled

    Abstract: No abstract text available
    Text: P re 'ir'irc í-y KM 616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM 3 ,3V Operating FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12* • (Max.) . Low Power Dissipation Standby (TTL) : 30« • (Max.) The KM616V1002B/BL is a 1,048,576-bit high-speed Static


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL KM616V1002B/BL-12 I/O16 KM616V1002B/BLJ 44-SOJ-400 KM616V1002B/BLT: 44-TSOP2-400F

    KM616V1002A

    Abstract: tba 231
    Text: KM616V1002A CMOS SRAM 6 4Kx16Bi t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) O perating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		PDF KM616V1002A KM616V1002A-12 KM616V1002A-15: KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-4CIO KM616V1002AT 44-TSOP2-400F KM616V1002A tba 231

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2 ,1 5 ,1 7 ,2 0 ns(M ax.) • Low Pow er Dissipation The K M 61 6 V 1 00 2 A is a 1,048,576-bit high-speed Static


    OCR Scan     		PDF KM616V1002A 576-bit 00E1573

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM Document Tills 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Prelim inary 1.0


    OCR Scan     		PDF KM616V1000B, KM616U1000B 100ns 616V1000B 1000B

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage


    OCR Scan     		PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP 7Tb4142

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly


    OCR Scan     		PDF KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15 KM616V1002A/AL-17 KM616V1002A/AL-20 Pi-400 44-TSOP2-400F 003124b

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL, KM616V1002AI/ALI CMOS SRAM Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002A/AL, KM616V1002AI/ALI 64Kx16 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA June-1997