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    KM616V1002 Price and Stock

    Samsung Semiconductor KM616V1002BJ-8

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    Bristol Electronics KM616V1002BJ-8 1,865
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    Quest Components KM616V1002BJ-8 1,492
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    Samsung Semiconductor KM616V1002BT-8

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    Quest Components KM616V1002BT-8 406
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    Samsung Semiconductor KM616V1002AT-12

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    Bristol Electronics KM616V1002AT-12 77
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    Quest Components KM616V1002AT-12 306
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    KM616V1002AT-12 61
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    Samsung Semiconductor KM616V1002AT-15

    IC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC
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    Quest Components KM616V1002AT-15 286
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    SEC KM616V1002AT-15

    IC,SRAM,64KX16,CMOS,TSOP,44PIN,PLASTIC
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    Quest Components KM616V1002AT-15 5
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    KM616V1002 Datasheets (92)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V1002AIJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIT-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AIT-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-17 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AJ-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AT-12 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AT-15 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-17 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF
    KM616V1002AT-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM616V1002AT-20 Samsung Electronics 64K x 16 Bit High-Speed CMOS Static RAM Scan PDF

    KM616V1002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616V1002A

    Abstract: SRAM sheet samsung
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A SRAM sheet samsung

    KM616V1002B

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History


    Original     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B

    KM616V1002A

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original     		PDF KM616V1002A, KM616V1002AI 64Kx16 44-TSOP2-400F KM616V1002A

    KM616V1002B

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History


    Original     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 44-TSOP2-400F KM616V1002B

    Untitled

    Abstract: No abstract text available
    Text: for AT&T CMOS SRAM KM616V1002C/CL, KM616V1002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 48-fine KM616V1002C-Z KM616V1002C-F I/O16 25/Typ.

    KM616V1002C

    Abstract: No abstract text available
    Text: PRELIMINARY PRELIMINARY CMOS SRAM KM616V1002C/CL, KM616V1002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev .No. History Rev. 0.0 Initial Draft Draft Data


    Original     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 44-TSOP2-400F KM616V1002C

    SAMSUNG CL10

    Abstract: KM616V1002C
    Text: for AT&T CMOS SRAM KM616V1002C/CL, KM616V1002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 48-fine 80/Typ. 25/Typ. SAMSUNG CL10 KM616V1002C

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17: KM616V1002A-20 KM616VF I/016

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 June-1997 44-SOJ-400 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002C/CL, KM616V1002CI/CLI PRELIMINARY CMOS SRAM Document Tills 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    OCR Scan     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 KM616V1002 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002C/CL, KM616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Prelim inary Rev. 1.0


    OCR Scan     		PDF KM616V1002C/CL, KM616V1002CI/CLI 64Kx16 48-fine

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 8/10/12ns 200/190/180mA 200/195/190mA 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15: 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002A 576-bit

    256x16* STATIC RAM

    Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
    Text: Advanced information KM616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF KM616V1002A WORDx16 KM616V1002A-12 110mA KM616V1002A-15 100mA KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-400 256x16* STATIC RAM 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP

    KM616V1002A

    Abstract: N-319
    Text: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		PDF KM616V1002A KM616V1002A-12 KM616V1002A-15 KM616V1002A-17: 180mA KM616V1002A-20 I/O9-I/O16 KM616V1002AJ 44-SOJ-400 KM616V1002AT KM616V1002A N-319

    Untitled

    Abstract: No abstract text available
    Text: P re 'ir'irc í-y KM 616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM 3 ,3V Operating FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12* • (Max.) . Low Power Dissipation Standby (TTL) : 30« • (Max.) The KM616V1002B/BL is a 1,048,576-bit high-speed Static


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL KM616V1002B/BL-12 I/O16 KM616V1002B/BLJ 44-SOJ-400 KM616V1002B/BLT: 44-TSOP2-400F

    KM616V1002A

    Abstract: tba 231
    Text: KM616V1002A CMOS SRAM 6 4Kx16Bi t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) O perating KM616V1002A-12 : 200 mA(Max.)


    OCR Scan     		PDF KM616V1002A KM616V1002A-12 KM616V1002A-15: KM616V1002A-17 KM616V1002A-20 KM616V1002AJ 44-SOJ-4CIO KM616V1002AT 44-TSOP2-400F KM616V1002A tba 231

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2 ,1 5 ,1 7 ,2 0 ns(M ax.) • Low Pow er Dissipation The K M 61 6 V 1 00 2 A is a 1,048,576-bit high-speed Static


    OCR Scan     		PDF KM616V1002A 576-bit 00E1573

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly


    OCR Scan     		PDF KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15 KM616V1002A/AL-17 KM616V1002A/AL-20 Pi-400 44-TSOP2-400F 003124b

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL, KM616V1002AI/ALI CMOS SRAM Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002A/AL, KM616V1002AI/ALI 64Kx16 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA June-1997

    DD312

    Abstract: ics 0741 D0312
    Text: KM616V1002A/AL E l C iv CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns( Max. ) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) 0.5 mA(Max.) ; L-veronly


    OCR Scan     		PDF KM616V1002A/AL KM616V1002A/AL-12 KM616V1002A/AL-15: KM616V1002A/AL-17 KM616V1002A/AL-20 I/016 KM616V1002AJ/ALJ 44-S002 44-TSOP2-400F DD312 ics 0741 D0312

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A CMOS SRAM 64K x 16 Bit High-Speed C M O S Static R AM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5,17 ,2 0 ns(M ax.) • Low Pow er Dissipation Standby (TTL) : 3 0 m A(M ax.) (C M O S ): 10 m A(M ax.) Operating K M 6 1 6 V 1 0 0 2 A -1 2 : 200 m A(M ax.)


    OCR Scan     		PDF KM616V1002A

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM616V1002A, KM616V1002AI 64K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N ER A L DESCRIPTION Fast Access Time 12,15, 20ns(Max.) Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) O pe rati^ KM616V1002A - 1 2 : 170mA(Max.)


    OCR Scan     		PDF KM616V1002A, KM616V1002AI KM616V1002A 170mA KM616V1Q02A 165mA 160mA KM616V1002AJ 44-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: Rr€íir'in<!‘Y CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI 64K X 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION The KM616V1002B/BL is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI KM616V1002B/BL 576-bit 400mil March-1997