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    KM616V4002 Price and Stock

    Samsung Semiconductor KM616V4002BT10

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    Bristol Electronics KM616V4002BT10 96
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    Samsung Semiconductor KM616V4002BT12

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    Samsung Semiconductor KM616V4002BJ-15

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    Samsung Semiconductor KM616V4002BT-15

    IC,SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
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    Quest Components KM616V4002BT-15 425
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    KM616V4002BT-15 8
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    Samsung Semiconductor KM616V4002BT-10

    STANDARD SRAM, 256KX16, 10NS, CMOS, PDSO44
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    Quest Components KM616V4002BT-10 146
    • 1 $10.5
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    KM616V4002 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V4002BIJ-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BIJ-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BIJ-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BIT-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BIT-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BIT-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BJ-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BJ-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BJ-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BLIJ-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BLIJ-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BLIT-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BLJ-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BLJ-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BLT-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BLT-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BLT-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BT-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002BT-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) Original PDF
    KM616V4002CF-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF

    KM616V4002 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM616V4002C

    Abstract: No abstract text available
    Text: Back PRELIMPreliminaryPPPPPPPPPINARY KM616V4002C/CL, KM616V4002CI/CLI Preliminary CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data


    Original     		KM616V4002C/CL, KM616V4002CI/CLI 256Kx16 80/Typ. 25/Typ. KM616V4002C PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY Preliminary CMOS SRAM KM616V4002C, KM616V4002CI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0


    Original     		KM616V4002C, KM616V4002CI 256Kx16 180mA 175mA 170mA 200mA 195mA 190mA PDF

    KM616V4002B

    Abstract: vdr30
    Text: PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data


    Original     		KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 44-TSOP2-400F KM616V4002B vdr30 PDF

    KM616V4002C-15

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY KM616V4002C/CL, KM616V4002CI/CLI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		KM616V4002C/CL, KM616V4002CI/CLI 256Kx16 180mA 175mA 170mA 200mA 195mA 190mA 80/Typ. KM616V4002C-15 PDF

    KM616V4002C

    Abstract: KM616V4002
    Text: KM616V4002C/CL, KM616V4002CI/CLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM • Fast Access Time 10,12,15,20ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 10mA(Max.) 0.5mA(Max.) L-ver.only Operating KM616V4002C/CL - 10 : 170mA(Max.)


    Original     		KM616V4002C/CL, KM616V4002CI/CLI KM616V4002C/CL 170mA 165mA 160mA 155mA KM616V4002C KM616V4002 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY KM616V4002C, KM616V4002CI Preliminary CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0


    Original     		KM616V4002C, KM616V4002CI 256Kx16 25/Typ. 80/Typ. PDF

    KM616V4002B

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    Original     		KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 44-TSOP2-400F KM616V4002B PDF

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


    Original     		Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620 PDF

    KM616V4002BT-10

    Abstract: PCI9054 VME PMC MT4LC4M16R6TG-6 NM6403 P1386 TMS320C40 KM416V4104B-5 uprx
    Text: Утвержден ЮФКВ.469555.088РЭ-УД Модуль МЦ 4.07 Руководство по эксплуатации ЮФКВ.469555.088РЭ Инв.№ подл. Подп. и дата Взам.инв.№ Инв.№ дублл. Подп. и дата


    Original     		NM6403" com/download/9054/9054-1ds KM616V4002BT-10 PCI9054 VME PMC MT4LC4M16R6TG-6 NM6403 P1386 TMS320C40 KM416V4104B-5 uprx PDF

    Lb 598 d

    Abstract: KM616V4002A 71L414E
    Text: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17,20* • Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) The KM616V4002A is a 4,194,304-bit high-speed Static Ran­ dom Access Memory organized as 252,144 words by 16 bits.


    OCR Scan     		616V4002A 256Kx KM616V4002A- KM616V4002A-17 KM616V4002A I/O16 KM616V4002AJ 44-SOJ-400 I/O9-I/O18 March-1997 Lb 598 d 71L414E PDF

    Scans-0012741

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 KM616V4002BI/BLI 44-SOJ-400 44-TSO P2-400F Scans-0012741 PDF

    KM616V4002A

    Abstract: No abstract text available
    Text: KM616V4002A CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996


    OCR Scan     		KM616V4002A 256Kx16 /20ns 15/17/20ns /220mA 260/255/250mA 12/13/14ns KM616V4002A PDF

    512X16 sram

    Abstract: KM616V4002B KM616V4002
    Text: Prr?]>rrTine:y KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION - F astA ccessT im e 10,12,15 *(M a x.) - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM616V4002B/BL is a 4,194,304-bit high-speed Static


    OCR Scan     		KM616V4002B/BL, KM616V4002B/BLI 256Kx KM616V4002B/BL-10 KM616V4002B/BL KM616V400202B/BLI 44-SOJ-400 44-TSQP2-400F 512X16 sram KM616V4002B KM616V4002 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 44-SOJ-400 44-TSOP2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616V4002B/BL, KM616V4002BI/BLI CMOS SRAM 256K X 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns(Max.) • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.)- L-Ver.


    OCR Scan     		KM616V4002B/BL, KM616V4002BI/BLI KM616V4002B/BL 250mA /I616V40Q2B/BL 245mA 240mA KM616V4002BJ 44-SOJ-4CJO PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM616V4002C/CL, KM616V4002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		KM616V4002C/CL, KM616V4002CI/CLI 256Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* (Max.) - Low Power Dissipation The KM616V4002B/BL is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16


    OCR Scan     		KM616V4002B/BL, KM616V4002B/BLI 256Kx KM616V4002B/BL 304-bit D03L7bb 44-SOJ-400 PDF

    KM616V4002aj

    Abstract: No abstract text available
    Text: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20*‘ Max. - Low Power Dissipation Standby (TTL) : 50»»(Max.) (CMOS) : 10*«(Max.) Operating KM616V4002A - 15 : 200 • • (Max.)


    OCR Scan     		KM616V4002A KM616V4002A KM616V4002A-1 I/O16 KM616V4002AJ 44-SOJ-400 304-bit arch-1997 KM616V4002aj PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997


    OCR Scan     		KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 44-TSOP2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Tim e 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 m A (Max.) (C M O S ): 10 mA (Max.) Operating KM616V4002A -12 : 240 mA (Max.)


    OCR Scan     		KM616V4002A KM616V4002A KM616V4002AJ 44-SQJ-400 304-bit PDF

    616V4002B

    Abstract: No abstract text available
    Text: CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997


    OCR Scan     		KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 2-400F 616V4002B PDF

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L PDF