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    Gems Sensors & Controls KM681000BLP-7

    Ls-77700 Series Bent Stem Level Switch |Gems Sensors KM681000BLP-7
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    Newark KM681000BLP-7 Bulk 5
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    Samsung Semiconductor KM681000BLG-5

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    Bristol Electronics KM681000BLG-5 2,033
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    Quest Components KM681000BLG-5 2,851
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    KM681000BLG-5 98
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    KM681000BLG-5 26
    • 1 $4.56
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    Samsung Semiconductor KM681000BLG-7

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    Bristol Electronics KM681000BLG-7 459 1
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    Quest Components KM681000BLG-7 77
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    Samsung Semiconductor KM681000LP-10

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    Bristol Electronics KM681000LP-10 234
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    Samsung Semiconductor KM681000BLT-7L

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    KM681000 Datasheets (148)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM681000 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM681000-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-7L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000-8L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000ALGI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALGI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-10L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7 Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000ALPI-7L Samsung Electronics 128K x 8 Bit Static RAM Scan PDF
    KM681000AL-V Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM681000B Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    ...

    KM681000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    km681000clg-5l

    Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
    Text: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA


    Original
    PDF KM681000C 100ns 0820R) km681000clg-5l KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L

    KM681000ELG-5L

    Abstract: KM681000E KM681000EL KM681000ELI KM681000ELI-L KM681000EL-L 32-DIP-600 128Kx8 cmos sram 600mil km681000elg-7
    Text: KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.


    Original
    PDF KM681000E 128Kx8 0820F) KM681000ELG-5L KM681000EL KM681000ELI KM681000ELI-L KM681000EL-L 32-DIP-600 128Kx8 cmos sram 600mil km681000elg-7

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


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    PDF KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


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    PDF KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.


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    PDF KM681000BLE 128Kx8 550nW 275pW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L

    Untitled

    Abstract: No abstract text available
    Text: KM681000ALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • In d ustria l Tem perature Range: - 4 0 to 85°C • Fast A ccess Tim e: 70,100 ns (Max.) • Low Power D issip a tio n Standby (C M O S ): 550/jW (Max.) L-\fer.


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    PDF KM681000ALPI/ALGI 128Kx8 550/jW 275/iW 110mW KM681000ALPI/ALPI-L: 32-Pin KM681000ALGI/ALGI-L: KM68100QALPI/ALGI

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply


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    PDF KM681000BL 128Kx8 110fiW 385mW KM681OQOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681000BLT/BLT-L 0820F)

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product


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    PDF KM681000B 0820F) 0820R)

    km681000lp

    Abstract: KM681000LG KM681 km681000l
    Text: KM681000L/KM681000L-L CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation — Standby (CMOS): 10|jW (typ.) L-Version 5^iW(typ.) L-L Version — O perating : 110mW/MHz (max.)


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    PDF KM681000L/KM681000L-L 120ns 110mW/MHz 50/jA KM681000LP/LP-L: KM681000LG/LG-L: 681000L/L-L km681000lp KM681000LG KM681 km681000l

    KM681000

    Abstract: A12E
    Text: SAMSUNG SE MICONDUCT OR INC 23E D • 7 cit>Mm2 0000304 5 ■ Advanced Information CMOS SRAM KM681000/KM681000L T - - ^ ' 2 3 1 2 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 80, 1 0 0 ,120ns max. • Low Power Dissipation


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    PDF KM681000/KM681000L 120ns 32-pin 600mll) 450mil) KM681000/L 576-bit KM681000 A12E

    KM681000AL-L

    Abstract: KM681000ALT
    Text: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply


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    PDF KM681000AL/KM681OOOAL-L 120ns 81000A KM681OOOALG/ALG-L: KM681000ALT/ALT-L KM681OOOALR/ALR-L: KM681OOOAL/AL-L 576-bit KM681000AL/KM681000AL-L KM681000AL-L KM681000ALT

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G E L E C T R O N I C S INC b4E D • 7 * ^ 4 1 4 2 0 0 1 4 0 2 4 OT4 ■ SMGK KM681000ALV CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2 . 7 - 5.5V • Fast Access Time 3V Operation: 240ns Max.


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    PDF KM681000ALV 240ns 120ns iW/35mW KM681000ALP-V: 32-pin 600mil) KM681000ALG-V: 525mil)

    Untitled

    Abstract: No abstract text available
    Text: KM681000BL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION Pin Nam e ? —? p ÒÒ OOp OOcolt Pin Function A 0 -A 16 Address Inputs We Write Enable input CS1, CS2 Chip Seet Input ÔE 1/01-1/08 uuuuyuyuyuuuyuuu PIN CONFIGURATION Top Views


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    PDF KM681000BL/BL-L KM681000BL7BL-L 576-bit KM681000BL/BL-L KM681000B1VBL-L 20/iA D10Eb4

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization: 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage: 2V Min • Three state output and TTL Compatible


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    PDF KM681000B 128Kx8 KM681000BL4 0023b3? KM681 0G53b3Ã

    0820R

    Abstract: KM681000CLG-7L KM681000CLGI-7L 32-TSOP1-R KM681000CLP-7 KM681000CLT-7L KM681000CLG
    Text: PRIORITY KM681000C Family CMOS SRAM Document Titie 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Pratt Date Remark 0.0 Initial draft November 22th 1995 Design target 0.1 First revision - Separate read and write at Icc, Icci Icc = Icci - * Read : 15mA, Write : 35mA


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    PDF KM681000C 100ns KM681000CL KM681000CLI 0820R KM681000CLG-7L KM681000CLGI-7L 32-TSOP1-R KM681000CLP-7 KM681000CLT-7L KM681000CLG

    cs1g

    Abstract: No abstract text available
    Text: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072


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    PDF KM681000ALI/ALI-L 100ns 110mW KM681000ALPI/ALPI-L: 32-pin 600mil) KM681000ALGI/ALGI-L: 525mil) 681000ALI/ALI-L cs1g

    681000CLP

    Abstract: P55n 681000C 2U27 0-00C M681000CL
    Text: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated


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    PDF KM681000C 128Kx8 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000CL 681000CLP P55n 681000C 2U27 0-00C M681000CL

    sram 681000

    Abstract: KM681000ELG-5L KM681000
    Text: Preliminary KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 H istory Draft Data Remark Design target October 12, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and


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    PDF KM681000E 128Kx8 600mil) 525mil) 0820F) sram 681000 KM681000ELG-5L KM681000

    KM681000BLE

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BLE / BLE-L 128Kx8 B it Extended Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • E x te n d e d T e m p e ra tu r e R a n g e : -2 5 to 85°C T h e K M 6 8 1 0 0 0 B L E /B L E -L is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d


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    PDF KM681000BLE 128Kx8 550nW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L KM681000BLRE/BLRE-L

    km681000lp

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b4E ]> • 7^4142 KM681000L/KM681000L-L 0 D1 3 eì cì b 521 SMGK CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation -S ta n d b y (CMOS): lO^W (typ.) L-Version


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    PDF KM681000L/KM681000L-L 120ns 110mW/MHz 681000L/L-L D014004 km681000lp

    Untitled

    Abstract: No abstract text available
    Text: KM681000AL/KM681000AL-L CMOS SRAM 128KX8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access T im * 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10pW (typ.) L-Version 5|iW (typ.) LL-Version Operating : 35mW (typ.) • Single S V ±10 % Power Supply


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    PDF KM681000AL/KM681000AL-L 128KX8 KMG81000ALP/ALP-L: 600mil) KM681000ALG/ALG-L: 525mil) KM681000ALT/ALT-L KM681000ALR/ALR-L: 000AUAL-L 576-bit

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8


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    PDF KM681000B 128Kx8

    681000BLP-7L

    Abstract: 681000BLP B8100 KM681000BI 681000BLG
    Text: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES G EN ER A L DESCRIPTION • Process Technology: 0.6nm C M O S • Organization: 128Kx8 • Power Supply Voltaga: Single 5.0V±10 % • Low Date Retention Voltage : 2V Mln • Three state output and TTL Compatible


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    PDF KM681000B 128Kx8 32-DIP-600 32-SOP-525 32-TSQP1-0820F/R 681000BLP-7L 681000BLP B8100 KM681000BI 681000BLG

    Untitled

    Abstract: No abstract text available
    Text: KM681000AL-V CMOS SRAM 1 2 8 K x 8 Bit Static R A M W ide Voltage Range Operation FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7-5.5V • Fast Access Time — 3V Operation: 240ns (Max.) — 5V Operation: 120ns (Max.) • Low Power Dissipation Standby/Operating


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    PDF KM681000AL-V 240ns 120ns 0ftW/35mW KM681000ALP-V: 32-pln KM681000ALGV: 32-pin KM681OOOALT/R-V: