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    Untitled

    Abstract: No abstract text available
    Text: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)


    OCR Scan     		PDF KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L

    Untitled

    Abstract: No abstract text available
    Text: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation


    OCR Scan     		PDF KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681OOOBL/BL-L 131,072 WORD x 8 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast A c c e s s T im e : 55, 70, 85, 100ns M ax. • L o w P o w e r D issipation S ta n d b y (C M O S ) : 10.«W(Typ.) L-Version 5/i WfTyp.) LL-Version O p era tin g


    OCR Scan     		PDF KM681OOOBL/BL-L 100ns

    0820R

    Abstract: KM62256B
    Text: KM681OOOBLI/BLI-L ~l3 1 , 0 V2 W O R D X CMOS SRAM 8 B it C M O S S ts tic R A M Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation


    OCR Scan     		PDF KM681OOOBLI/BLI-L 100ns 275/iW 110mW KM681000BLGI/BLG-L KM681000BLTI/BLTI-L KM681000BLRI/BLRI-L 32-SOP-525 32-TSOP1-0820F 32-TSOP1 0820R KM62256B

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7E D • 7 ^ 4 1 4 2 0017S12 bSR «SMf iK ADVANCE INFORMATION KM681000BL/KM681OOOB L-L CMOS SRAM 131,072 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns max. • Low Power Dissipation


    OCR Scan     		PDF 0017S12 KM681000BL/KM681OOOB 100ns KM681000BLP/BLP-L KM681000BLG/BLG-L: KM681000BLT/BLT KM681000BLR/BLR-L: KM681000BL/BL-L

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		PDF KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.


    OCR Scan     		PDF KM681000BLE 128Kx8 550nW 275pW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM681000BL 128Kx8 110fiW 385mW KM681OQOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681000BLT/BLT-L 0820F)

    Untitled

    Abstract: No abstract text available
    Text: KM681000BL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION Pin Nam e ? —? p ÒÒ OOp OOcolt Pin Function A 0 -A 16 Address Inputs We Write Enable input CS1, CS2 Chip Seet Input ÔE 1/01-1/08 uuuuyuyuyuuuyuuu PIN CONFIGURATION Top Views


    OCR Scan     		PDF KM681000BL/BL-L KM681000BL7BL-L 576-bit KM681000BL/BL-L KM681000B1VBL-L 20/iA D10Eb4

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization: 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage: 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 KM681000BL4 0023b3? KM681 0G53b3Ã

    KM681000BLE

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BLE / BLE-L 128Kx8 B it Extended Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • E x te n d e d T e m p e ra tu r e R a n g e : -2 5 to 85°C T h e K M 6 8 1 0 0 0 B L E /B L E -L is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d


    OCR Scan     		PDF KM681000BLE 128Kx8 550nW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L KM681000BLRE/BLRE-L

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8


    OCR Scan     		PDF KM681000B 128Kx8

    KM736V789-60

    Abstract: 512k*8 sram KM68U4000A
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -


    OCR Scan     		PDF KM622S6C KM62256D KM68S12A KM68512B KM681OOOB 32Kx8 64KX8 128KX8 KM736V789-60 512k*8 sram KM68U4000A

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and have various package types


    OCR Scan     		PDF KM681000B 128Kx8 32-DIP, 32-SOP, 32-TSOP Q03L477 KM681 600mil) 525mil)

    A13CH

    Abstract: km6810008 A12CZ KM681000BLI km6810008l
    Text: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.


    OCR Scan     		PDF KM681000BLI 128Kx8 550pW 385mW KM681000BLGI/BLG 32pin 525mil) KM681000BLTI/BLTI-L 0820F) A13CH km6810008 A12CZ km6810008l

    KM681000BLP-7L

    Abstract: KM681000B KM681000BL
    Text: KM681000B Family CMOS SRAM D o cu m en t Title 128K x8 bit Low Power CMOS Static RAM R é visio n H is to ry Revision No. History Draft Data Rem ark 0 .0 Initial d ra ft fo r c o m m e rc ia l p ro d u c t - C o m m e rc ia l P ro d u c t o n ly O c to b e r 28 th, 1992


    OCR Scan     		PDF KM681000B 100ns 0820F) 0820R) KM681000BLP-7L KM681000BL