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    kmb 050n60p

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS


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    KMB050N60PA kmb 050n60p PDF

    kmb 050n60p

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS


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    KMB050N60PA kmb 050n60p PDF

    050n60p

    Abstract: kmb*050n60p
    Text: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS


    Original
    KMB050N60PA 050n60p kmb*050n60p PDF

    kmb*050n60p

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS


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    KMB050N60PA kmb*050n60p PDF

    kmb 050n60p

    Abstract: 050n60p 050n60 kmb*050n60p KMB050N60PA KMB050N60P KMB050N60 KMB 050N60
    Text: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS


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    KMB050N60PA kmb 050n60p 050n60p 050n60 kmb*050n60p KMB050N60PA KMB050N60P KMB050N60 KMB 050N60 PDF

    kmb*050n60p

    Abstract: KMB050N60 KMB050N60P KMB050N60PA a726 KMB050N
    Text: SEMICONDUCTOR KMB050N60PA MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking. 2. Marking 1 KMB050N60P A 726 No. 2007. 8. 24 2 Item Marking Description Device Name KMB050N60PA KMB050N60PA Lot No. 726 Revision No : 0 7 Year 0~9 : 2000~2009


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    KMB050N60PA O-220AB KMB050N60P kmb*050n60p KMB050N60 KMB050N60P KMB050N60PA a726 KMB050N PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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