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    Untitled

    Abstract: No abstract text available
    Text: KMM372E804CS DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM componenets are applied for this module. KMM372E804CS KMM372E804CS DRAM MODULE


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    KMM372E804CS 8Mx72 4Mx16 KMM372E804CS KMM372E804C 8Mx72bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E80 8 3CK/CS Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.1 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372E80(8)3CK/CS DRAM MODULE KMM372E80(8)3CK/CS


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    KMM372E80 8Mx72 8Mx72bits 400mil 168-pin PDF

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E80 8 3BK/BS KMM372E80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E80(8)3B consists of nine CMOS 8Mx8bits DRAMs


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    KMM372E80 8Mx72bits 400mil 168-pin KMM372E803BK KMM372E803BS PDF

    4004C

    Abstract: No abstract text available
    Text: KMM372E804BS DRAM M ODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KMM372E804BS Revi si on Hi st or y Version 0.0 (Sept, 1997) ; Rem oved tw o AC param eters tCACP(access tim e from C AS) and tAAP(access tim e from col. addr.) in AC C H A R A C T E R IS T IC S .


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    KMM372E804BS 8Mx72 4Mx16 372E804BS x72bits x16bits 4004C PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM M ODULE KMM372E80 8 3BK/BS Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM372E80(8)3BK/BS Revi si on Hi st or y Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


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    KMM372E80 8Mx72 72E80( 8Mx72bits 400mil 168-pin PDF