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    Vishay Electro-Films BCR13000KRAHWS

    BCR 10% +0/-250PPM WS
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    DigiKey BCR13000KRAHWS Tray 250
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    Vishay Electro-Films BCR1000BKRAHWS

    BCR 10% +0/-250PPM WS
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    Vishay Electro-Films BCR4700AKRAHWS

    BCR 10% +0/-250PPM WS
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    DigiKey BCR4700AKRAHWS Tray 250
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    Vishay Electro-Films BCR14001KRAHWS

    BCR 10% +0/-250PPM WS
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    Vishay Electro-Films BCR62002KRAHWS

    BCR 10% +0/-250PPM WS
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    KRAH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RAS 0510 SUN HOLD

    Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
    Text: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.


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    PDF mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03

    Untitled

    Abstract: No abstract text available
    Text: 97/07E <:=:2BC@6 9:89 ?>E6@ @6;2G 7MIYZWMX a ljx OSEP?DEJC ?=L=>EHEPU a nG8 @EAHA?PNE? OPNAJCPD c>APSAAJ ?KEH =J@ ?KJP=?POd a /AAPEJC 8{| jqjjf jpmk NAEJBKN?A EJOQH=PEKJ a k }KNI xf k }KNI y =J@ k }KNI z ?KJBECQN=PEKJO a 5K?GAPO =R=EH=>HA a 2H=OPE? OA=HA@ =J@ @QOP LNKPA?PA@ PULAO =R=EH=>HA


    Original
    PDF 97/07E

    POWER TRANSFORMER E154515

    Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
    Text: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ H S T ^ iTAT10Nr r With U kraHnJJ TestStation Duo Concurrent In-Circuit Test Systems Provides Fastest ICT Test Throughput, Lowers High Volume Production Costs Key Features: • Twice the through­ put of traditional in­ circuit testers ■ Lower capital equip­


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    PDF iTAT10Nr 2011-All STG-TSDU0-2011-02

    HY5117404a

    Abstract: KRAH
    Text: “H Y U N D A I ^Y5117404A, HY5116404A 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


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    PDF Y5117404A, HY5116404A HY5117404AJ HY5117404ASLJ HY5117404AT HY5117404ASLT HY5116404AJ HY5116404ASLJ HY5116404AT HY5116404ASLT HY5117404a KRAH

    PD70433

    Abstract: v55pi 25T80 UPD70433GD5BB V55SC V25TM DW01
    Text: MOS INTEGRATED CIRCUIT ^PD70433 V55PI NEC V55PI 16-BIT MICROPROCESSOR DESCRIPTION The | ì PD70433 (V55PI) is a microprocessor in which a 16-bit CPU, RAM, serial interface, parallel interface, A/D converter, timers, DMA controller, interrupt controller, etc. are integrated in a single chip.


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    PDF uPD70433 V55PI) V55PITM 16-BIT PD70433 V55PI /iPD70322, V25TM PD70433 25T80 UPD70433GD5BB V55SC DW01

    Untitled

    Abstract: No abstract text available
    Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.


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    PDF HY5216256 256Kx 16-bit 16bits 4b750Ã 1VC01-00-MAY95 525mil 64pin 4b750flÃ

    21040-07

    Abstract: 21040-AC Scans-0025707
    Text: in t e l. 21040 4M 4,194,304 x 1 BIT DYNAMfC RAM WITH FAST PAGE MODE • Performance Range Symbol Parameters tRAC Access Time from RAS *CAC *RC 21040-07 21040-08 70 80 Access Time from CAâ 20 25 ns Read Cycle Time 130 150 ns . ■ Fast Page Mode Operation


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    PDF Cycles/16mS 20-LEAP 21040-07 21040-AC Scans-0025707

    Untitled

    Abstract: No abstract text available
    Text: H f f f f i rfnj-» .nut-w»» 140 Commerce Drive IVIVI ViVfVI ilw iJr {4 } UVVV i V <w ÊV fÊ Ç rM % J& K ïïnH i M ontgom eryvilte, Pr>A18936-1013 Tei: 215 631-9840 jK4)! Mk J <fc Jt J K iv i S D 1441 RF & MICROWAVE TRANSISTOR 130.,.230MHz FM MOBI LE APFLIGATIONS


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    PDF 230MHz SD144! -04S/1 4S0/12 8KV21

    IA15

    Abstract: No abstract text available
    Text: G 7. SGS-1H 0 MS 0 N M28V841 HQÊISOIlLiÊratôIRiOlgS LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH M EM O RY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSCJP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE


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    PDF M28V841 TSCJP40 100ns TSOP40 x20mm IA15

    TC514170BJ-80

    Abstract: TC514170 TC514170BJ80 TC514170BJ70 TC514170BJ-70 tc514170b
    Text: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques


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    PDF TC514170BJ-70/80 TC514170BJ -L/08) 1CH724fl TC514170BJ-80 TC514170 TC514170BJ80 TC514170BJ70 TC514170BJ-70 tc514170b

    qml-38535

    Abstract: RCD testers
    Text: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR Changes in accordance with NOR 5962-R031-93 92-11-24 M . A . Frye Changes in accordance with NOR 5962-R205-95. 95-12-15 M . A . Frye Update and make changes to case outline N. Update boilerplate. Editorial changes


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    PDF 5962-R031-93. 5962-R205-95. TDD470Ã DDE301E qml-38535 RCD testers