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    KSB546 Price and Stock

    onsemi KSB546O

    TRANS PNP 150V 2A TO220-3
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    DigiKey KSB546O Bulk 1,200
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    onsemi KSB546Y

    TRANS PNP 150V 2A TO220-3
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    Flip Electronics KSB546YTU

    TRANS PNP 150V 2A TO-220
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    DigiKey KSB546YTU Tube 2,000
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    onsemi KSB546YTU

    TRANS PNP 150V 2A TO220-3
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    DigiKey KSB546YTU Tube 1
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    Avnet Americas KSB546YTU Tube 0 Weeks, 2 Days 1,725
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    Verical KSB546YTU 4,207 747
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    Rochester Electronics KSB546YTU 4,412 1
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    Flip Electronics KSB546YTU 6,000
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    KSB546 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSB546 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB546 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
    KSB546 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    KSB546 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KSB546 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSB546 Samsung Electronics PNP (TV VERTICAL DEFLECTION OUTPUT) Scan PDF
    KSB546O Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB546R Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB546Y Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB546YTU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF

    KSB546 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSB546

    Abstract: KSD401 vertical tv deflexion KSD401 O
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD401 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 200V(Min) ·Collector Current- IC= 2A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Complement to Type KSB546


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    PDF KSD401 KSB546 KSB546 KSD401 vertical tv deflexion KSD401 O

    Untitled

    Abstract: No abstract text available
    Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSB546 • Collector-Base Voltage: VCBO=200V • Collector Current: IC=2A • Collector Dissipation: PC=25W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


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    PDF KSD401 KSB546 O-220

    Untitled

    Abstract: No abstract text available
    Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF KSD401 KSB546 O-220 KSD401

    KSB546

    Abstract: KSD401
    Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF KSD401 KSB546 O-220 KSB546 KSD401

    Untitled

    Abstract: No abstract text available
    Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


    Original
    PDF KSB546 -200V KSD401 O-220 KSB546YTU KSB546O KSB546R KSB546Y

    Untitled

    Abstract: No abstract text available
    Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


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    PDF KSB546 -200V KSD401 O-220

    KSB546

    Abstract: KSD401
    Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    PDF KSD401 KSB546 O-220 KSB546 KSD401

    Untitled

    Abstract: No abstract text available
    Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


    Original
    PDF KSB546 -200V KSD401 O-220

    KSB546

    Abstract: KSD401
    Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


    Original
    PDF KSB546 -200V KSD401 O-220 KSB546 KSD401

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


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    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    BJT BD139

    Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
    Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1


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    PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD157 2JD210 BJT BD139 TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003

    B0530

    Abstract: MPSU57 motorola 2SA958 2N2882 ppc power transistor
    Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SOT69504 SOT69604 SOT69604 SOT3504 SOT3504 SOT3504 SOT3512 SOT3512 ~~~ggJ2 25 30 2N6180 2SA1008 2SA1395M B03700 B03700 B03720 B03720 SOT69512 ~~+~~~~~ 35 40 SOT69612 MM5007 NSOU57 SOT3508 SOT3508 SOT3508


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    PDF RCA1A04 SML69604 SML69612 SML3504 SML3508 SML3512 SML3516 2N2882 2N3207 BLX41 B0530 MPSU57 motorola 2SA958 ppc power transistor

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD401 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSB546 C ollector-B ase Voltage: V Cb o = 2 0 0 V C ollecto r C urrent: lc=2A C ollecto r D issipation: P c= 2 5 W T c=25°C ABSOLUTE MAXIMUM RATINGS Rating


    OCR Scan
    PDF KSD401 KSB546

    KSB546

    Abstract: KSD401
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD401 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSB546 C ollector-B ase Voltage: V Cb o = 2 0 0 V C ollecto r Current: lc=2A C ollecto r D issipation: Pc=25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit


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    PDF KSD401 KSB546 O-220 500uA, KSB546 KSD401

    Untitled

    Abstract: No abstract text available
    Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Vbltage VCBo =200V Collector Current lc=2A Collector Dissipation PC=25W Tc=25°C TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


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    PDF KSD401 KSB546 O-220

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSB546 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSD401 C ollector-B ase Voltage: V Cbo = -200V C ollecto r C urrent: lc = -2A C ollecto r D issipation: Pc= 2 5W T c=25°C ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan
    PDF KSB546 KSD401 -200V

    C25W

    Abstract: No abstract text available
    Text: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Com plem en t to KS0401 • Collector-B ase Voltage V Cb o = -2 0 0 V • C ollector Current lc = - 2 A • C ollector Dissipation P C=25W Tc =25°C ABSOLUTE MAXIMUM RATINGS


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    PDF KSB546 KS0401 O-220 --10mA, -150V, C25W

    Untitled

    Abstract: No abstract text available
    Text: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSD401 Collector-Base Voltage: V C b o = -200V Collector Current: lc = -2A Collector Dissipation: Pc= 25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage


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    PDF KSB546 KSD401 -200V

    Untitled

    Abstract: No abstract text available
    Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Voltage: V Cbo = 2 0 0 V Collector Current: lc=2A Collector Dissipation: Pc=25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol


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    PDF KSD401 KSB546

    TS 4142

    Abstract: 18Oi S03 pnp KSD401 KSD526 samsung tv
    Text: SAMSUNG SEMICONDUCTOR 14E INC KSB546 D I T 'ib M m a 0 0 0 7 SOG PNP EPITAXIAL SILICON TRANSISTOR - T 33- TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSD401 C ollector-Base Voltage Vcso = -2 0 0 V C ollecto r C urrent lc = - 2 A C ollecto r D issipation PC=25W Tc =25°C


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    PDF ksb546 KSD401 -200V O-220 ksb601 r-33-Ã TS 4142 18Oi S03 pnp KSD401 KSD526 samsung tv

    KSD401

    Abstract: KSB546
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSB546 TV VERTICAL DEFLECTION OUTPUT • • • • C o m p le m e n t to K S D 401 C o lle c to r-B a s e V o lta g e : V C b o = -2 0 0 V C o lle c to r C u rre n t: lc = -2 A C o lle c to r D is s ip a tio n : P c = 2 5 W T c = 2 5 °C


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    PDF KSB546 KSD401 -200V O-220 500nA, KSD401 KSB546

    ksb546

    Abstract: No abstract text available
    Text: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • Complement to KSD401 • Collector-Base Voltage V 0 e o = -200V • Collector Current l c = -2A • Collector Dissipation Pc= 25W Tc=25'C ABSOLUTE MAXIMUM RATINGS Rating Unit VcEO


    OCR Scan
    PDF KSB546 KSD401 -200V 500mA, ksb546