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    KSB601 Search Results

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    KSB601 Price and Stock

    onsemi KSB601Y

    TRANS PNP DARL 100V 5A TO220-3
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    onsemi KSB601OTU

    TRANS PNP DARL 100V 5A TO220-3
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    onsemi KSB601YTU

    TRANS PNP DARL 100V 5A TO220-3
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    Rochester Electronics LLC KSB601YTU

    TRANS PNP DARL 100V 5A TO220-3
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    onsemi KSB601YTSTU

    TRANS PNP DARL 100V 5A TO220-3
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    KSB601 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSB601 Fairchild Semiconductor PNP Epitaxial Silicon Darlington Transistor Original PDF
    KSB601 Fairchild Semiconductor PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR Scan PDF
    KSB601 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    KSB601 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KSB601 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSB601 Samsung Electronics PNP Epitaxial Silicon Darlington Transistor Scan PDF
    KSB601O Fairchild Semiconductor TRANS DARLINGTON PNP 100V 5A 3TO-220 Original PDF
    KSB601OTU Fairchild Semiconductor PNP Epitaxial Silicon Darlington Transistor Original PDF
    KSB601R Fairchild Semiconductor Low Frequency Power Amplifier Original PDF
    KSB601Y Fairchild Semiconductor Low Frequency Power Amplifier Original PDF
    KSB601YTSTU Fairchild Semiconductor PNP Epitaxial Silicon Darlington Transistor Original PDF
    KSB601YTU Fairchild Semiconductor PNP Epitaxial Silicon Darlington Transistor Original PDF
    KSB601YTU_NL Fairchild Semiconductor PNP Epitaxial Silicon Darlington Transistor Original PDF

    KSB601 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF KSB601 KSD560 O-220 PW10ms, Cycle50% KSB601wer KSB601

    KSB601

    Abstract: KSD560
    Text: KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSD560 KSB601 O-220 KSB601 KSD560

    Untitled

    Abstract: No abstract text available
    Text: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF KSB601 KSD560 O-220 PW10ms, Cycle50%

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF KSD560 O-220 KSB601 Cycle50%

    Untitled

    Abstract: No abstract text available
    Text: KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSD560 KSB601 O-220

    Untitled

    Abstract: No abstract text available
    Text: KSD560 KSD560 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSD560 KSB601 O-220 PW10ms, Cycle50% KSD560

    KSB601

    Abstract: KSD560
    Text: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF KSB601 KSD560 O-220 KSB601 KSD560

    Untitled

    Abstract: No abstract text available
    Text: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF KSB601 KSD560 O-220

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


    Original     		PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 150 V Collector-Emitter Voltage


    OCR Scan     		PDF KSD560 KSB601 350/is,

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE T O -2 2 0 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage V cB O -1 0 0 Collector-Emitter Voltage


    OCR Scan     		PDF KSB601 KSD560 350uS,

    LC2000

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE TO-220 • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF KSB601 KSD560 O-220 LC2000

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICO N DARLINGTON T R A N SIST O R KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 150 V Collector-Emitter Voltage


    OCR Scan     		PDF KSD560 O-220 KSB601

    KSB601

    Abstract: KSD560 h300f
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTO R KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SW ITCHING INDUSTRIAL USE • C o m p le m e n t to K S D 5 6 0 A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o lle c to r-B a s e V o lta g e C h a r a c te r is tic


    OCR Scan     		PDF KSB601 KSD560 O-220 H300fi KSB601 KSD560 h300f

    EM 316

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO -220 • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF KSD560 KSB601 EM 316

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSB601 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic VcBO S ym bol 150


    OCR Scan     		PDF KSD560 O-220 KSB601

    KSD569

    Abstract: KSB601 KSB708 KSD560 KSD568 C 3311 transistor
    Text: ^SAMSUNG S E M I C O N D U C T O R m e I NC d I oaoTboa NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 T ~ LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol


    OCR Scan     		PDF KSD560 KSB601 -r-55 O-220 T-33-11 KSD569 KSB601 KSB708 KSD560 KSD568 C 3311 transistor

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE * Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol - 100 V Collector-Emitter Voltage


    OCR Scan     		PDF KSB601 KSD560 25roduct

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol - 100 V Collector-Emitter Voltage


    OCR Scan     		PDF KSB601 KSD560