L2SB1197KRLT1 Search Results

L2SB1197KRLT1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
L2SB1197KRLT1		Leshan Radio Company	Low Frequency Transistor PNP Silicon		Original	PDF
L2SB1197KRLT1G		Leshan Radio Company	Low Frequency Transistor PNP Silicon		Original	PDF

L2SB1197KRLT1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: LRC LESHAN RADIO COMPANY,LTD. Low Frequency Transistor Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish L2SB1197KRLT1 3 COLLECTOR L2SB1197KQLT1 1 BASE 2 EMITTER 3 FAbsolute maximum ratings Ta = 25_C 1 2 SOT– 23	Original	L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197K OT-23 3000/Tape	PDF
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon FEATURE 3 ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 2 ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G	PDF
ahr 49 transistor Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB	Original	L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor	PDF
ahr transistor Abstract: L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197K*LT1 PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB	Original	L2SB1197K L2SD1781K 236AB) L2SB1197KQLT1 L2SB1197KQLT1G 3000/Tape L2SB1197KRLT1 L2SB1197KRLT1G ahr transistor L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KQLT1G S-L2SB1197KQLT1G L2SD1781K AEC-Q101 236AB) 3000/Tape 10000/Tape L2SB1197KQLT1G	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G	PDF
ahr transistor Abstract: L2SB1197KQLT1G L2SB1197KRLT1G L2SB1197K sot23 ahq Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr transistor L2SB1197KRLT1G L2SB1197K sot23 ahq	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. 1 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KQLT1G S-L2SB1197KQ L2SD1781K AEC-Q101 236AB) 3000/Tape L2SB1197KQLT1G S-L2SB1197KQLT1G L2SB1197KQLT3G S-L2SB1197KQLT3G	PDF
copper wire Abstract: LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G Text: LESHAN RADIO COMPANY, LTD. Ver.A PRODUCT/PROCESS CHANGE NOTIFICATION TO CUSTOMER PCN Number: LNC 090401 PCN Issue Date: 28th Apr' 2009 Contact: Contact your local LRC Sales Office Phone: Change Title: Copper Wire replacing Gold Wire in the SOT23 Packages Contact your local LRC Sales	Original	L2SC2411KRLT1G L2SC2412KQLT1G L2SC2412KRLT1G L2SC2412KSLT1G L2SC3906KALT1G L2SD1781KRLT1G L2SD2114KVLT1G L2SD2114KWLT1G L9012QALT1G L9012QLT1G copper wire LH8550QLT1G L2SA1037AKRLT1G SSBC847BLT1G LBAS21CLT1G L9015HRLT1G LMBT3904SLT1G lmbt3906lt1g lrc LBCX19LT1G L9012RLT1G	PDF