SY68730ZC
Abstract: MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX
Text: Autoclave Pressure Pot Test + 121C / 15 PSIG (With Pre-con 3X Reflow ) MSL Pkg Lds Device D/C Process Qty Hours Rej Assembler L3 L3 L3 L3 BGA BGA BGA BGA 289 289 289 289 KS8695PX KS8695PX KS8695PX KSZ8695PX 0407 0421A 0417A 0452A TSMC .18 TSMC .18 TSMC .18
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KS8695PX
KSZ8695PX
KS8721BL
KS8995M
KS8995X
KS8995E
SY68730ZC
MIC29302BT
SY68730
sy10s897
0343a
KS8721BL
Unisem
tsmc cmos
tsmc cmos 0.35
KSZ8695PX
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sy10s897jc
Abstract: cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003
Text: EXTENDED TEMPERATURE CYCLE Ta Delta = -65C to +150C MSL Pkg Lds Device D/C Process Qty Cyc. L3 BGA 289 KS8695PX 0421A L3 BGA 289 KS8695PX 0407 L1 L1 P.DIP P.DIP 24 40 MIC59P50 MIC10937P L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2
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KS8695PX
MIC59P50
MIC10937P
MIC2214PM
MIC2198
SY88953L
MIC2550
sy10s897jc
cmos tsmc 0.18
A103267
0.18 tsmc BCD
sy10s897
MIC29300BU
BGA289
Unisem
MIC2287
SPN860003
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TP-LINK
Abstract: smd r4b DM9331 DM9331AE SMD r1b DM9331A tplink V23818 6.8k SOT R23
Text: 8 7 6 5 4 3 2 1 L5 FOR 3.3V FIBER MODULE L3 FOR 5V FIBER MODULE DVDD L5 1 2.2uH/SMD1812 +5V L3 1 2.2uH/SMD1812 FOR DM9331A ONLY AUTO LOOP-BACK TEST DVDD SW1 1 FULL D RA2 1 2 1 4 SW1_2 SW1_5 SW1_11 SW1_8 8 7 6 5 R1B R2B R3B R4B RESET# 50MHZ FX_RXDV R19 6.8K
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2uH/SMD1812
DM9331A
50MHZ
TP-LINK
smd r4b
DM9331
DM9331AE
SMD r1b
tplink
V23818
6.8k
SOT R23
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Cystek
Abstract: No abstract text available
Text: CYStech Electronics Corp. SOT-223 Dimension A Marking: B C 1 2 3 D E F H G a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638
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OT-223
UL94V-0
Cystek
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BFG198
Abstract: microstripline
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
BFG198
microstripline
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PowerMOS Transistors
Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)
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OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
OT186
O-220
OT186A
O-220)
OT223
PowerMOS Transistors
075E05
MS-012AA
SO24
SSOP16
SSOP24
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
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r1601
Abstract: SOT223 MARKING L5 thn6601b
Text: Specification THN6601B NPN SiGe RF TRANSISTOR Unit in mm SOT223 □ Applications 6.5 - UHF and VHF wide band amplifier 3.0 4 - High gain bandwidth product 7.0 3.5 □ Features fT = 7 GHz - High power gain 1 |S21|2 = 7 dB @ VCE = 5 V, IC = 100 mA, f = 1 GHz
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THN6601B
OT223
r1601
SOT223 MARKING L5
thn6601b
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
MSB002
R77/03/pp16
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bfg135 application note
Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
BFG135
MSB002
OT223.
R77/03/pp16
771-BFG135-T/R
bfg135 application note
bfg135sot223
BFG135 amplifier
TRANSISTOR GENERAL DIGITAL L6
BFG135,115
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BFG135 amplifier
Abstract: SC7313 BFG135 bfg135 application note MBB298
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
MSB002
R77/03/pp16
BFG135 amplifier
SC7313
BFG135
bfg135 application note
MBB298
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ATML
Abstract: ATML U 0420g MIC5205M5 ATML H Unisem 0116E ATML 28 SPN860003 MIC2211
Text: High Temp Bias Moisture Life Test TA = 85C / 85%RH at rated voltage or Highly Accelerated Stress Test HAST +131C / 85%RH MSL Pkg Lds Device D/C Process L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 6 6 6 10 10 10 10
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0144B
0207B
0217B
0219B
0245B
0252C
0307E
0321D
0321E
SY88923KC
ATML
ATML U
0420g
MIC5205M5
ATML H
Unisem
0116E
ATML 28
SPN860003
MIC2211
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TO220 land pattern
Abstract: 1122 sot-223 AP1122 sot89 marking JB
Text: AP1122 1A Low Dropout Positive Regulator Features General Description - 1.3V maximum dropout at full load current - Fixed 1.2V+ 2% output voltage - Fast transient response - Output current limiting - Built-in thermal shutdown - Good noise rejection - Pb-Free Packages: SOT223, TO263, TO252,
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AP1122
AP1122
TO220 land pattern
1122 sot-223
sot89 marking JB
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1122 sot-223
Abstract: AP1122
Text: AP1122 1A Low Dropout Positive Regulator Features General Description - 1.3V maximum dropout at full load current - Fixed 1.2V+ 2% output voltage - Fast transient response - Output current limiting - Built-in thermal shutdown - Good noise rejection - Pb-Free Packages: SOT223, TO263, TO252,
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AP1122
AP1122
1122 sot-223
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bfg97
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223
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BFG97
OT223
BFG31.
MSB002
OT223.
R77/02/pp16
bfg97
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regulator 17-33
Abstract: 1117-3.3 17-33 sot89
Text: AP1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator Features General Description - 1.4V maximum dropout at full load current - Fast transient response - Output current limiting - Built-in thermal shutdown - Packages: SOT223, TO263, TO252, TO220,
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AP1117
OT223,
AP1117
regulator 17-33
1117-3.3
17-33 sot89
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BFG35
Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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BFG35
OT223
OT223.
MSA035
TRANSISTOR FQ
BFG35 amplifier
BHS111
npn 2222 transistor
TRANSISTOR NPN c4 nf
C2570
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npn 2222 transistor
Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851
Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
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BFG198
OT223
7110fl2b
MSA035
OT223.
npn 2222 transistor
BFG198
MS80
din 45325
2222 TRANSISTOR NPN
Philips 2222 114 capacitor
2222 851
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BFG35 amplifier
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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OT223
I3FG55.
BFG35
OT223.
MBB364
BFG35 amplifier
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Philips 2222 050 capacitor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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BFG135
OT223
MSB002
OT223.
711062b
110fi2b
711Da2b
Philips 2222 050 capacitor
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BFG135 power amplifier for 900Mhz
Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated
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BFG135
OT223
711Qfl2ti
7110fl2b
BFG135
BFG135 power amplifier for 900Mhz
BFG135 amplifier
BFG135 A amplifier
BFG135 TRANSISTOR
MBB300
BFG135 - BFG135
microstripline
npn 2222 transistor
power amplifier specifications at 900Mhz
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NT 407 F TRANSISTOR
Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.
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BFG198
OT223
MS8002
OT223.
NT 407 F TRANSISTOR
Philips CD 303
2222 595
npn 2222 transistor
BFG198
MS8002
0450 7N
2222 443
TRANSISTOR D 471
MRA transistor
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MB87S
Abstract: No abstract text available
Text: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.
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bbS3R31
BFG198
OT223
MB87S
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Untitled
Abstract: No abstract text available
Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband
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BFG135
OT223
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