Untitled
Abstract: No abstract text available
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
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Original
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PDF
|
SIDC03D30SIC2
32mm2
Q67050-A4163sawn
Q67050-A4163unsawn
L4821A,
|
L4821A
Abstract: No abstract text available
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
|
Original
|
PDF
|
SIDC03D30SIC2
SIDC03D30SIC2
32mm2
Q67050-A4163sawn
Q67050-A4163unsawn
L4821A,
L4821A
|
L4821A
Abstract: SPD10S30 A101 SIDC03D30SIC2
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
|
Original
|
PDF
|
SIDC03D30SIC2
Q67050-A4163sawn
Q67050-A4163unsawn
L4821A,
L4821A
SPD10S30
A101
SIDC03D30SIC2
|
Untitled
Abstract: No abstract text available
Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior
|
Original
|
PDF
|
SIDC03D30SIC2
SIDC03D30SIC2
32mm2
Q67050-A4163A1
Q67050-A4163A2
L4821A,
|