L7C106DC17
Abstract: L7C106DC20 L7C106DC25 L7C106PC17 L7C106PC20 L7C106PC25 CY7C106
Text: L7C106 L7C106 DEVICES INCORPORATED 256K x 4 Static RAM 256K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION The L7C106 is a high-performance, low-power CMOS static RAM. The storage circuitry is organized as 262,144 words by 4 bits per word. The 4 Data In and Data Out signals share I/O pins.
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Original
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L7C106
L7C106
28-pin
L7C106PC25
L7C106PC20
L7C106PC17
L7C106DC25
L7C106DC20
L7C106DC17
L7C106DC20
L7C106DC25
L7C106PC17
L7C106PC20
L7C106PC25
CY7C106
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PDF
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CY7C106
Abstract: L7C106DC17 L7C106DC20 L7C106DC25 L7C106PC17 L7C106PC20 L7C106PC25
Text: L7C106 L7C106 DEVICES INCORPORATED 256K x 4 Static RAM 256K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 4 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum
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Original
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L7C106
CY7C106
28-pin
L7C106
L7C106PC25
L7C106PC20
L7C106PC17
CY7C106
L7C106DC17
L7C106DC20
L7C106DC25
L7C106PC17
L7C106PC20
L7C106PC25
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PDF
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Untitled
Abstract: No abstract text available
Text: L Q Q IC L7C106 25 6 K x 4 Static RA M D E V IC E S IN C O R P O R A I h . FEATURES DESCRIPTION □ 256K x 4 Static R A M w ith Chip Select Pow erd ow n, O utpu t E nable □ A uto-Pow erdow n Design □ A dvanced C M O S T echnology □ H igh Speed — to 17 ns m axim um
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OCR Scan
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L7C106
L7C106
L7C106PC25
L7C106PC20
L7C106PC17
L7C106DC25
L7C106DC20
L7C106DC17
L7C106WC25
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PDF
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Untitled
Abstract: No abstract text available
Text: jjjm ÆmSmmkjjjjjj jmSSm L7C106 „ „ „ I mm MMMM 256K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum
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OCR Scan
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L7C106
CY7C106
28-pin
L7C106
L7C106PC25
L7C106WC25
L7C106WC20
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PDF
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106E capacitor
Abstract: No abstract text available
Text: L7C10S L7C1CG 256K x 4 Static RAM □256K x 4 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 17 ns maximum □Low Power Operation Active: 400 mW typical at 25 ns Standby: 5 mW typical
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OCR Scan
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L7C10S
CY7C106
28-pin
L7C106
L7C106DC25
L7C106DC20
L7C106DC17
106E capacitor
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PDF
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Untitled
Abstract: No abstract text available
Text: L7C106 256K x 4 Static RAM DEVICES INCORPORATED I FEATURES DESCRIPTION □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 400 mW typical at 25 ns
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OCR Scan
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L7C106
CY7C106
28-pin
L7C106
L7C106DC25
L7C106DC20
L7C106DC17
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PDF
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Untitled
Abstract: No abstract text available
Text: jjjm ÆmSmmkjjjjjj jmSSm MMMM „„„I L7C106 mm 256K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum
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OCR Scan
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L7C106
CY7C106
28-pin
L7C106
L7C106PC25
L7C106DC25
L7C106W
L7C106PC20
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PDF
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