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    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L88007 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF L88007

    LDMOS

    Abstract: No abstract text available
    Text: POLYFET RF DEVICES LDMOS Lateral Double Diffuse MOS Transistor The Next Generation polyfet rf devices 1 DMOS Technology • Vertical DMOS 9 Lateral DMOS • Bottom Side Drain • Source bond wire reducing gain • Higher Crss • BEO isolation • High Package Cost


    Original     		PDF L88081 L88082 L88013 L88012 L88008 L88007 L88016 L88026 1000Mhz LDMOS