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    iComTech Inc CP-118EL-A-W-O-CABLE

    8 PORT PCIE BOARD, NO CABLE
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    DigiKey CP-118EL-A-W-O-CABLE Box 27 1
    • 1 $581
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    iComTech Inc CP-168EL-A-W-O-CABLE

    8 PORT PCIE BOARD, NO CABLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CP-168EL-A-W-O-CABLE Box 16 1
    • 1 $334
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    • 1000 $334
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    iComTech Inc CP-104EL-A-W-O-CABLE

    4 PORT PCIE BOARD, NO CABLE
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    DigiKey CP-104EL-A-W-O-CABLE Box 3 1
    • 1 $233
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    Moxa Inc CP-118EL-A W/O CABLE

    PCIe Board,8 port, RS-232/422/485,no cable, low profile | Moxa CP-118EL-A w/o Cable
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS CP-118EL-A W/O CABLE Bulk 9 14 Weeks 1
    • 1 $570.16
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    Neutron USA CP-118EL-A W/O CABLE 50
    • 1 $487.12
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    Moxa Inc CP-168EL-A W/O CABLE

    UPCI Board, 8 Port, no cable, RS-232, Low Profile | Moxa CP-168EL-A w/o Cable
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS CP-168EL-A W/O CABLE Bulk 7 14 Weeks 1
    • 1 $342.18
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    Neutron USA CP-168EL-A W/O CABLE 7
    • 1 $319.92
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    LAWO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    submersible motor winding formula

    Abstract: dc motor for 24v braun
    Text: Antriebstechnik_2011_05_27_Finale_EN_:Vorlage 31.05.2011 15:43 Seite 1 Drive technology for AC and DC The engineer’s choice version 2011 Antriebstechnik_2011_05_27_Finale_EN_:Vorlage 31.05.2011 15:43 Seite 2 Innovations for the future The right product for every requirement


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    PDF RA-06/11-4â M1138 D-78112 D-74673 D-84030 submersible motor winding formula dc motor for 24v braun

    PM-308

    Abstract: 8WIN PM1008 PM108A pm 108 PM308 PII-108
    Text: ANALOGDE~ICESfAX-ON-DEHANDHOTLINE - Page 38 ANALOG Low-input-Current Operational Amplifiers W DEVICES PM-'08/PM208/PM-308 I I FEATURES . GENERAL DESCRIPTION The PM-108A series of precision operational amplifiers feature very low input offset and bias currents. Although


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    PDF 08/PM208/PM-308 200pA Proce88lng Q811AX PM-108A PM-108A PM-308 8WIN PM1008 PM108A pm 108 PM308 PII-108

    PW610

    Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
    Text: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,


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    PDF 2SJ324 IEI-1209) PW610 TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0

    intel 8288

    Abstract: intel 8288 bus controller 8085 MICROCOMPUTER SYSTEMS USERS MANUAL 8086 interrupt structure design fire alarm 8088 microprocessor RCA SK CROSS-REFERENCE 8086 family users manual 8086 user manual AP 67 weir smm 200
    Text: iAPX 86, 88 USER'S MANUAL AUGUST 1981 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors which may appear in this document nor does it make a commitment to update the information contained herein. Intel software products are copyrighted by and shall remain the property of Intel Corporation. Use, duplication or


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    PDF w-9707 116th SA/C-258n81 /45K/RRD intel 8288 intel 8288 bus controller 8085 MICROCOMPUTER SYSTEMS USERS MANUAL 8086 interrupt structure design fire alarm 8088 microprocessor RCA SK CROSS-REFERENCE 8086 family users manual 8086 user manual AP 67 weir smm 200

    Issues in Political Theory

    Abstract: moores law
    Text: 21st Century Semiconductor Manufacturing Capabilities Eugene S. Meieran, Intel Fellow Technology Manufacturing Engineering, Intel Corp. Index words: manufacturing, operational cost, NGM program Abstract Semiconductor device manufacturers face many difficult challenges as we enter the 21st century. Some are direct consequences of adherence to Gordon Moore’s Law, which states


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    PDF

    D4217400

    Abstract: nec 4217400
    Text: JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­


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    PDF JJPD4216400, /PD4216400 /JPD4217400 28/24-pin MjE30( 6D-15 fiPD4216400, pPD4216400, D4217400 nec 4217400

    Untitled

    Abstract: No abstract text available
    Text: AW i « »02 O rd& r & M U T o c\'b f\ HM514270, HM514270L Series Preliminary 262,144-word x 16-blt Dynamic Random Access Memory ^ H I T A T he H itachi H M 514270/L are CMOS dynamic R A M o rg a n iz e d as 2 6 2 ,1 4 4 -w o rd x 16-bit. HM514270/L have realized higher density, higher


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    PDF HM514270, HM514270L 144-word 16-blt 514270/L 16-bit. HM514270/L 400-mil

    001104 203 02

    Abstract: DG110 qml-38535 5962-90622
    Text: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA REV SHEET 35 36 37 38 39 40 41 42 43 44 45 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV SHEET REV REV STATUS OF SHEETS SHEET PREPARED BY PMIC N/A DEFENSE ELECTRONICS SUPPLY CENTER


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    Untitled

    Abstract: No abstract text available
    Text: Te m ic TLH.4900 TELEFUNKEN Semiconductors High Efficiency LED in 0 3 mm Clear Package Color High efficiency red Soft orange Yellow Green Technology TLHR4900 TLH04900 TLHY4900 TLHG4900 GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP on GaP Angie of Half Intensity


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    PDF TLHR4900 TLH04900 TLHY4900 TLHG4900

    relay lzl

    Abstract: k3n omron Scans-031 SSC 9500
    Text: Period Meter omRon K3NP Period Meter Operation Manual Produced January 1998 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual. The following conventions are used to indicate and classify precautions in this manual. Always heed


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    PDF 6-949-6035/Fax: NL-2132 2356-81-300/Fax: 847-843-7900/Fax: 835-3011/Fax: N94-E1 relay lzl k3n omron Scans-031 SSC 9500

    133M

    Abstract: xax3
    Text: TOSHIBA TC59S6432CFT/CFTL-54,-60,-70,-80,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 524,288words X 4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of clock


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    PDF TC59S6432CFT/CFTL-54 288-WORDSX4BANKSX32-BITS TC59S6432CFT/CFTL 288-wordsX4 62MAX 133M xax3

    dsa 362

    Abstract: No abstract text available
    Text: ADE-203-231B Z HM538123B Series 131072-word x 8-bit Multiport CMOS Video RAM H I T A The HM538123B is a 1-Mbit multiport video R A M equipped with a 128-kword x 8-bit dynamic C H I data between R A M and SAM . In addition, it has two modes to realize fast writing in RAM . Block


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    PDF ADE-203-231B HM538123B 131072-word 128-kword 256-word 128-word dsa 362

    HM511001AP-12

    Abstract: 511001AP
    Text: HM511001A Series 1,048,576-Word x 1-Bit CMOS Dynamic RAM • DESCRIPTION HM 511001AP Series The H itachi H M 51 1 0 01 A series is a C M OS dynam ic R AM organized 1,048,576w ord x 1-bit. H M 51 1001A has realized higher density, higher p erform ance and vari­


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    PDF HM511001A 576-Word 11001A 18-pin 20-pin 3DOP18C 511001AP HM511001AP-12

    Untitled

    Abstract: No abstract text available
    Text: IBM11D4400C IBM11D4370C IBM11E4400C IBM11E4370C 4M X 36/4M X 40 D R A M M odules Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 ÎRAC RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns I aa Access Time From Address


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    PDF IBM11D4400C IBM11D4370C IBM11E4400C IBM11E4370C 36/4M 72-Pin 110ns 130ns IBM11D4400cp

    814800

    Abstract: cr2927 814800S
    Text: FUJITSU LTD S3E » • 374<ì75b DDD34D3 ^ ci ci « F C A J c O May 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 8 0 0 A -70/-80/-10 CMOS 512KX.8 BIT FAST PAGE MODE D YNAMIC RAM CMOS 524,288 x 8 bit Fast Page Mode Dynamic RAM The Fujitsu MB814800Ais a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304


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    PDF DDD34D3 512KX MB814800Ais MB814800A 512x8-bits MB814800A-70/-80/-10 814800 cr2927 814800S

    Untitled

    Abstract: No abstract text available
    Text: IBM0165400B 16M X 4 DRAM Features • Low Power Dissipation - Active: 504m W /432m W max - Standby (LVTTL Inputs): 7.2m W (max) - Standby (LVCMOS Inputs): 720 W (max) • 16,777,216 word by 4 bit organization • Single 3.3 ± 0.3V power supply • 4096 refresh cycles/64ms


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    PDF IBM0165400B cycles/64ms 110ns /432m 500milx875mil) 0165400BJ5A/T5A IBM0165400B 06H0001 MMDD45DSU-01

    BR17

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications Joint Audio Decoder-Encoder - Multimode PSB 7238 Version 2.1 Datasheet 1998-07-01 DS 1 PSB 7238 1998-07-01 Revision History: Current Version: 1998-07-01 Previous Version: Preliminary Data Sheet 06.98 V1.2 Page (in previous


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    PDF P-TQFP-100 BR17

    V53C466

    Abstract: DQQ0400 vitelic V53C466 lawo M54510
    Text: VITELIC VITELIC CORP ifl D ÌJ ^505310 DQQ0400 7 T-V6-Z3-/7 V 5 3C 4 66 FAMILY HIG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT S TA TIC CO LUM N CMOS DYN A M IC RAM 70/70L 8 0 /8 0 L 10/10L Max. RAS Access Time, t ^ 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, tCAA


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    PDF DQQ0400 70/70L V53C466 10/10L V53C466L V53C466-12 DQQ0400 vitelic V53C466 lawo M54510

    D482234

    Abstract: PD482234
    Text: SEC NEC Electronics Inc. Preliminary Information Description Each of the jjPD482234 fast-page and pPD482235 (hyper-page) video RAMs has a random access port and a serial read port. The serial read port is connected to an internal 4096-bit data register through a 512 x


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    PDF jjPD482234 pPD482235 4096-bit 256Kx D482234 PD482234

    transistor 1BT 86

    Abstract: 26-PIN MSM5116100A
    Text: O K I Semiconductor MSM5 1 16100 A_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100A is a new generation dynam ic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100A is O K I’s C M O S silicon gate process technology.


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    PDF MSM5116100A_ 216-Word MSM5116100A cycles/64ms SOJ26/24-P-3QO-1 S0J26/24-P-300-1 b72M240 QQ24b37 transistor 1BT 86 26-PIN

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC59S6432CFT/CFTL-54,-60,-70,-80,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 524,288words X 4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of clock


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    PDF TC59S6432CFT/CFTL-54 288-WORDSX4BANKSX32-BITS TC59S6432CFT/CFTL 288words

    ic 40103

    Abstract: 74HC40103
    Text: F Z Z SCS-THOM SON M54/74HC40102 M54/74HC40103 ^ 7 # , EB lllLI gre©HDei 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS • HIGH SPEED fMAX = 34 MHz (Typ at Vcc = 5V ■ LOW POWER DISSIPATION ICC = 4 pA (MAX.) at Ta = 25 °C ■ HIGH NOISE IMMUNITY V N IH = V N I L = 28% Vcc (MIN.)


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    PDF M54/74HC40102 M54/74HC40103 40102B/40103B M54/74HC40102/40103 t10246 HC40102 HC40103 M54/74HC40102/40103 ic 40103 74HC40103

    SI HV5

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿ ¿ P D 4 2 6 4 16 5 , 4 2 6 5 16 5 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READA/VRITE MODE Description T h e;/P D 426 416 5, 4265165 are 4,194.304 w ords by 16 bits C M OS dynam ic RAMs with optional h yper page mode


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    PDF 16-BIT, 50-pin uPD4264165-A50 uPD4265165-A50 uPD4264165-A60 uPD4265165-A60 S50GS-80-7JF3 PD4264165, iPD4264165G5-7JF, 65165G SI HV5

    133M

    Abstract: No abstract text available
    Text: TOSHIBA TC59S6432CFT/CFTL-54,-60,-70,-80,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6432CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 524,288words X 4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of clock


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    PDF TC59S6432CFT/CFTL-54 288-WORDSX4BANKSX32-BITS TC59S6432CFT/CFTL 288-wordsX4 0-61TYP P-22-0 62MAX 133M