MGCF21
Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount
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L8821P
LB421
L8821P
LP721
SM341
LQ821
SQ701
SR401
MGCF21
LY942
MOSFET 50 amp 1000 volt
Gx4002
5 watt hf mosfet
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45W Audio amplifier
Abstract: LDMOS 15w MRF284 LDL15
Text: LDL15 PRELIMINARY 15W DAB LDMos Technology Designed for Digital Audio Broadcasting, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • • 1450 - 1500 MHz 28 ÷32 Volts 30V nominal
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LDL15
15Wrms
28dBc
MRF284
126x64x30
GR00284
45W Audio amplifier
LDMOS 15w
LDL15
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CD723
Abstract: PCC104BCTND PCC104bct-nd PTMA210152
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
CD723
PCC104BCTND
PCC104bct-nd
PTMA210152
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices L88012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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L88012
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PTMA080152M
Abstract: RO4350 Infineon moisture sensitive package VARIABLE RESISTOR 2K
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
RO4350
Infineon moisture sensitive package
VARIABLE RESISTOR 2K
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Untitled
Abstract: No abstract text available
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
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PTMA080152M
Abstract: VARIABLE RESISTOR 2K BCP56 RO4350
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
VARIABLE RESISTOR 2K
BCP56
RO4350
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Untitled
Abstract: No abstract text available
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
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Untitled
Abstract: No abstract text available
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
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Infineon moisture sensitive package
Abstract: rj0c
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
Infineon moisture sensitive package
rj0c
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dvb-t transmitters
Abstract: GR00363 LDMOS 15w MRF9030 LDU25-R ldmos
Text: LDU25-R 30W pep –27dBc LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single-end LDMos Devices to enhance ruggedness and reliability. • • • • • • • •
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LDU25-R
27dBc
MRF9030
136x78x20mm
GR00363
dvb-t transmitters
GR00363
LDMOS 15w
LDU25-R
ldmos
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Untitled
Abstract: No abstract text available
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Description The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
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dvb-t transmitters
Abstract: LDMOS 15w GR00363 LDU25 power 470-860mhz w MRF9030
Text: LDU25 30W pep –27dBc LDMos Technology Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single-end LDMos Devices to enhance ruggedness and reliability. • • • • • • • • •
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LDU25
27dBc
MRF9030
136x78x20mm
GR00363
dvb-t transmitters
LDMOS 15w
GR00363
LDU25
power 470-860mhz w
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dvb-t transmitters
Abstract: MRF9060 LDMOS 15w Res-Ingenium
Text: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal
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LDV75M-R
75Wps
50Wps
15Wrms
MRF9060
120x78x30
GR00267
dvb-t transmitters
LDMOS 15w
Res-Ingenium
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LDMOS 15w
Abstract: Rogers 4350 80021 cz12010t0050g T494D106M035AS C30C32
Text: Design Application Note AN 091 App Circuit, Balanced Configuration, 2 x XD010 LDMOS Modules Abstract Sirenza Microdevices’ XD010 series of LDMOS power modules operate in the 400, 800, 900, 1800, 1900, and 2100 MHz frequency bands. They deliver greater than
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XD010
XD010-EVAL.
2x-XD010-EVAL
EAN-105972
LDMOS 15w
Rogers 4350
80021
cz12010t0050g
T494D106M035AS
C30C32
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LDV75M
Abstract: LDV75M-R LDMOS 15w MRF9060 ldmos
Text: LDV75M-R 75W LDMos Technology Amplifier Designed for analog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and single end LDMos Devices to enhance ruggedness and reliability. • 170 - 230 MHz • 28 ÷32 V 30V Nominal
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LDV75M-R
75Wps
50Wps
15Wrms
MRF9060
120x78x30
GR00267
LDV75M
LDV75M-R
LDMOS 15w
ldmos
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD0912M15HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD0912M15HV is designed for Avionics TACAN systems operating at 960-1215 MHz. Operating at
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ILD0912M15HV
ILD0912M15HV
ILD0912M15HV-REV-NC-DS-REV-NC
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Integra Technologies
Abstract: No abstract text available
Text: Part Number: Integra ILD1011M15HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET High Power Gain Superior thermal stability The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,
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ILD1011M15HV
ILD1011M15HV
ILD1011M15HV-REV-NC-DS-REV-E
Integra Technologies
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Untitled
Abstract: No abstract text available
Text: MTT 2001 Vdmos vs. LDMOS How to Choose Polyfet Rf Devices S. K. Leong Tuesday, May 22, 2001 1 Vdmos vs Ldmos • Technology - Process Structure Differences. • DC Characteristics • RF Characteristics – Gain, Stability, Ruggedness • Applications – HF, VHF, Low UHF, High UHF, PCS
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CD723
Abstract: No abstract text available
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
CD723
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Infineon moisture sensitive package
Abstract: PTMA210152M RO4350 68c21
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PG-DSO-20-63
28ubstances.
Infineon moisture sensitive package
RO4350
68c21
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PTMA210152M
Abstract: RO4350 Infineon moisture sensitive package
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in
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PTMA210152M
PTMA210152M
15-watt,
20-lead
RO4350
Infineon moisture sensitive package
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LDMOS 15w
Abstract: BLF1043 EQUIVALENT BLF861 BLF861A BLF1822-10 BLF2045 09nH
Text: Philips Semiconductors LDMOS Broadcast Drivers Equivalent Circuits • BLF1043, BLF1822-10 and BLF2045 are LDMOS transistors which can be used in Band IV/V applications in conjunction with BLF861A • To support the use of these drivers in Band IV/V, equivalent in- and output circuits are shown
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BLF1043,
BLF1822-10
BLF2045
BLF861A
470MHz
860MHz
BLF1043
BLF1822-10
BLF2045
LDMOS 15w
BLF1043
EQUIVALENT
BLF861
BLF861A
09nH
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bd 142 transistor
Abstract: No abstract text available
Text: Part Number: Integra ILD0506EL350 TECHNOLOGIES, INC. P-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD0506EL350 is designed for P-Band systems operating at 480-610 MHz. Operating at a pulse width of 15ms with
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ILD0506EL350
ILD0506EL350
ILD0506EL350-REV-PR1-DS-REV-NC
bd 142 transistor
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