HP RF TRANSISTOR GUIDE
Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS
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SG384/D
HP RF TRANSISTOR GUIDE
MRF286
MRF210305
MHL9838
mrf284
Curtice
linear amplifier 470-860
Base Station Drivers
motorola MRF
High frequency MRF transistor
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Untitled
Abstract: No abstract text available
Text: R_10032 CA-330-11; LDMOS bias module Rev. 1.0 — 24 July 2012 Report Document information Info Content Keywords LDMOS, bias Abstract This report describes a bias module for LDMOS RF power transistors. It provides a low-noise bias supply, temperature compensation, and a very
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CA-330-11;
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LDMOS NONLINEAR
Abstract: APP3617 DS1870 DS4303 DS4305 AN3617 LDMOS digital LDMOS
Text: Maxim > App Notes > DIGITAL POTENTIOMETERS WIRELESS, RF, AND CABLE Keywords: DS1870, DS4303, DS4305, LDMOS, Power Amplifier, RF, Bias Sep 16, 2005 APPLICATION NOTE 3617 Using the DS4303 to Bias LDMOS RF Power Amps Abstract: LDMOS RF power amps dominate the GSM and CDMA base-station markets by providing excellent
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DS1870,
DS4303,
DS4305,
DS4303
DS1870
DS4303.
com/an3617
DS1870:
DS4303:
DS4305:
LDMOS NONLINEAR
APP3617
DS4305
AN3617
LDMOS digital
LDMOS
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LDU601C
Abstract: 600W TRANSISTOR AUDIO AMPLIFIER PTFA043002E M2.5 torque settings 300W TRANSISTOR AUDIO AMPLIFIER 600w power amplifier GR01790 LDU60 300w amplifier rf amplifier 100w
Text: LDU601C 600W pep –27dBc min LDMOS Technology Designed for analog TV applications, this pallet amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. Patented bias control and matching circuit. • • •
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LDU601C
27dBc
PTFA043002E
GR01790
LDU601C
600W TRANSISTOR AUDIO AMPLIFIER
M2.5 torque settings
300W TRANSISTOR AUDIO AMPLIFIER
600w power amplifier
GR01790
LDU60
300w amplifier
rf amplifier 100w
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200w power AB amplifier circuit diagram
Abstract: LM35 application circuits op-amp with 34 AC LM35 CC sensor LM35 ad5888 sensor for temperature LM35 200w motorola power amplifier circuit diagram 640E6 lm35 sensor interfacing with adc schematic diagram for ac line voltage conditioner
Text: LDMOS Transistors Bias Control in Basestation RF Power Amplifiers Using Intersil’s LUT-based Sensor Signal Conditioners Application Note April 20, 2006 AN174.2 Author: Jim Pflasterer Introduction Vdd LDMOS transistors are used for RF Power Amplification in
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AN174
200w power AB amplifier circuit diagram
LM35 application circuits op-amp with
34 AC LM35 CC
sensor LM35
ad5888
sensor for temperature LM35
200w motorola power amplifier circuit diagram
640E6
lm35 sensor interfacing with adc
schematic diagram for ac line voltage conditioner
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200w power amplifier circuit diagram
Abstract: AN1385 LDMOS digital ISL21400 MRF9080
Text: LDMOS Transistor Bias Control in Basestation RF Power Amplifiers Using Intersil’s ISL21400 Application Note February 27, 2007 Introduction AN1385.0 The ISL21400 Programmable Output Temperature Sensor IC LDMOS transistors are used for RF Power Amplification in
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ISL21400
AN1385
ISL21400
200w power amplifier circuit diagram
LDMOS digital
MRF9080
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7908 motorola
Abstract: sda 5708 34 AC LM35 CC 200w power AB amplifier circuit diagram 640E6 AMP 11392 200w power amplifier circuit diagram sensor LM35 BB 7358 AN1741
Text: LDMOS Transistors Bias Control in Basestation RF Power Amplifiers Using Intersil’s LUT-based Sensor Signal Conditioners Application Note August 15, 2005 AN174.1 Author: Jim Pflasterer Introduction Vdd LDMOS transistors are used for RF Power Amplification in
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AN174
7908 motorola
sda 5708
34 AC LM35 CC
200w power AB amplifier circuit diagram
640E6
AMP 11392
200w power amplifier circuit diagram
sensor LM35
BB 7358
AN1741
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Untitled
Abstract: No abstract text available
Text: 19-4371; Rev 0; 11/08 KIT ATION EVALU E L B A AVAIL Dual RF LDMOS Bias Controller with Nonvolatile Memory The MAX11008 controller biases RF LDMOS power devices found in cellular base stations and other wireless infrastructure equipment. Each controller includes
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MAX11008
12-bit
T4877M-1
MAX11008
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POT1 10T R1K
Abstract: AC00 DS1870 DS1870E-010 J-STD-020A pin diagram of bf 494 transistor
Text: Rev 1; 5/04 LDMOS RF Power-Amplifier Bias Controller Features The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables LUTs to control 256-position potentiometers based on the amplifier’s
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DS1870
256-position
DS1870s.
POT1 10T R1K
AC00
DS1870E-010
J-STD-020A
pin diagram of bf 494 transistor
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MAX11008
Abstract: 2N3904 11D sot 23
Text: 19-4371; Rev 0; 11/08 KIT ATION EVALU E L B A AVAIL Dual RF LDMOS Bias Controller with Nonvolatile Memory Features The MAX11008 controller biases RF LDMOS power devices found in cellular base stations and other wireless infrastructure equipment. Each controller includes
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MAX11008
12-bit
amplifie48
T4877M-1
MAX11008
2N3904
11D sot 23
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AC00
Abstract: DS1870 DS1870E-010 J-STD-020A BB40h 7E00
Text: Rev 0; 2/04 LDMOS RF Power-Amplifier Bias Controller Features The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables LUTs to control 256-position potentiometers based on the amplifier’s
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DS1870
256-position
AC00
DS1870E-010
J-STD-020A
BB40h
7E00
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20 TQFN-EP
Abstract: APC 2010 B apc be 500 ups 2N3904 MAX11008
Text: 19-4371; Rev 0; 11/08 Dual RF LDMOS Bias Controller with Nonvolatile Memory Features The MAX11008 controller biases RF LDMOS power devices found in cellular base stations and other wireless infrastructure equipment. Each controller includes a high-side current-sense amplifier with programmable
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MAX11008
12-bit
T4877M-1
MAX11008
20 TQFN-EP
APC 2010 B
apc be 500 ups
2N3904
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380KB
Abstract: No abstract text available
Text: Rev 2; 2/06 KIT ATION EVALU E L B AVAILA LDMOS RF Power-Amplifier Bias Controller Features The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables LUTs to control 256-position potentiometers based on the amplifier’s
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13-Bit
32-Bytes
16-Pin
DS1870
56-G2019-000A
U16-1*
DS1870E-010
DS1870E-010+
380KB
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LDMOS NONLINEAR
Abstract: AC00 DS1870 DS1870E-010 J-STD-020A Weight sensor
Text: Rev 2; 2/06 KIT ATION EVALU E L B AVAILA LDMOS RF Power-Amplifier Bias Controller Features The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables LUTs to control 256-position potentiometers based on the amplifier’s
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DS1870
256-position
DS1870s.
LDMOS NONLINEAR
AC00
DS1870E-010
J-STD-020A
Weight sensor
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Untitled
Abstract: No abstract text available
Text: Rev 2; 2/06 KIT ATION EVALU LE B A IL A AV LDMOS RF Power-Amplifier Bias Controller Features The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables LUTs to control 256-position potentiometers based on the amplifier’s
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13-Bit
32-Bytes
16-Pin
DS1870
DS1870s.
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Untitled
Abstract: No abstract text available
Text: Rev 2; 2/06 KIT ATION EVALU E L B AVAILA LDMOS RF Power-Amplifier Bias Controller Features The DS1870 is a dual-channel bias controller targeted toward class AB LDMOS RF power-amplifier applications. It uses lookup tables LUTs to control 256-position potentiometers based on the amplifier’s
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DS1870
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MAX1385AETM
Abstract: No abstract text available
Text: 19-4456; Rev 0; 2/09 KIT ATION EVALU LE B A IL A AV Dual RF LDMOS Bias Controllers with I2C/SPI Interface The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations. Each device includes a high-side current-sense amplifier with programmable gains of 2, 10,
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MAX1385/MAX1386
MAX1385/MAX1386.
12-bit
MAX1385AETM
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max1385
Abstract: TL-22A transistor 2n3904 2N3904 2n3904 applications MAX1385AETM
Text: 19-4456; Rev 0; 2/09 KIT ATION EVALU LE B A IL A AV Dual RF LDMOS Bias Controllers with I2C/SPI Interface Features The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations. Each device includes a high-side current-sense amplifier with programmable gains of 2, 10,
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MAX1385/MAX1386
MAX1385/MAX1386.
12-bit
max1385
TL-22A
transistor 2n3904
2N3904
2n3904 applications
MAX1385AETM
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NONLINEAR MODEL LDMOS
Abstract: sweep generator MOTOROLA MRF19125 motorola amplifiers examples FET model AN1941
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1941/D AN1941 Modeling Thermal Effects in RF LDMOS Transistors Prepared by: Darin Wagner Motorola Semiconductor Products Sector Freescale Semiconductor, Inc. INTRODUCTION
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AN1941/D
AN1941
MRF19125
NONLINEAR MODEL LDMOS
sweep generator MOTOROLA
motorola amplifiers examples
FET model
AN1941
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Untitled
Abstract: No abstract text available
Text: TB6557FLG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6557FLG DC Motor Driver The TB6557FLG is a driver IC for driving DC motors. Its employs LDMOS devices with low ON resistance for output drive transistors. The TB6557FLG incorporates two constant
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TV booster diagram
Abstract: mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE
Text: RF Linear Amplifiers Freescale Semiconductor Device Data DL210 Rev. 3 3/2007 RF Product Portfolio freescale.com/rf Freescale Semiconductor offers RF Solutions a broad portfolio of RF products that utilize technologies such as LDMOS, GaAs, SiGe:C, RF CMOS
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DL210
TV booster diagram
mhw* 820-1 DATASHEET
pcb assembly 85501
application circuits of ic 74121
MHW6342TN
motorola 18310
MHL9236MN
DL210
010485
GP 809 DIODE
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Untitled
Abstract: No abstract text available
Text: TB6557FLG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6557FLG DC Motor Driver The TB6557FLG is a driver IC for driving DC motors. Its employs LDMOS devices with low ON resistance for output drive transistors. The TB6557FLG incorporates two constant
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TB6557FLG
TB6557FLG
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Untitled
Abstract: No abstract text available
Text: TB6557FLG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6557FLG DC Motor Driver The TB6557FLG is a driver IC for driving DC motors. Its employs LDMOS devices with low ON resistance for output drive transistors. The TB6557FLG incorporates two constant
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TB6557FLG
TB6557FLG
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transistor P4a
Abstract: TB6557FLG
Text: TB6557FLG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6557FLG DC Motor Driver The TB6557FLG is a driver IC for driving DC motors. Its employs LDMOS devices with low ON resistance for output drive transistors. The TB6557FLG incorporates two constant
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TB6557FLG
TB6557FLG
transistor P4a
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