LD271 APPLICATIONS
Abstract: IR LD271
Text: L 27t/H LD271L/HL SIEMENS 1" lea d s GaAs Infrared Emitter Dimensions in inches mm ,354(9.0) Surface not fla t- 10 (254) .024(0.6) 039 0 0) ' 0 ^ ° « ) :(g8(0.7f| T •0S1 ( l.s jÿ .071 (1.8)-Ci39(1.Q)y .047<1.2) Surface not flat .323 (8.2) >.307(7.8i
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27t/H
LD271L/HL
IT295
-Ci39
LD271/H
271HL
lE100mA
LD271/LD271L
LD271 APPLICATIONS
IR LD271
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Untitled
Abstract: No abstract text available
Text: SFH464 SIEMENS GaAIAs Infrared Emitter FEATURES • Radiation without IR in visible red range • Cathode electrically connected to case • Very high efficiency • High reliability • short switching time • Same package as BP 103, LD 242 • DIN humidity category per DIN 40040 GQG
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SFH464
18-pln
fl535t
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GEX06306
Abstract: No abstract text available
Text: GaAIAs Infrared Emitter Dimensions in inches mm Surface not flat .024 (0 . 6 ) .016 (0 . 4) .100 (2 .54 ) .047(1 GEX06306 FEATURES • GaAIAs IR emitter made a liquid phase epitaxy process • Small tolerance: Chip surface to case surface • Good spectral match to silicon
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GEX06306
SFH203P
OHB00686
lE/lE100mA
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J335
Abstract: No abstract text available
Text: C 3 1 l IT M c i v E i c l u n swfrt ô p l é i S SFH 420 SMT SIDELED® SFH 425 e o GaAs Infrared Emitter Dimensions in inches mm .094 .118(3.0) .083 (2.1) :067 (1.7) J335 (0.9) .028(0.7) .165 (4.2) .149(3.8) .110(2.8 .094 (2.4 1 L "I Anode/ Emitter .134 (3.4)
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SFH425
GPL6880
GPL6724
SFH420
lE/lE100mA
SFH420/42S
J335
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Untitled
Abstract: No abstract text available
Text: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870
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SFH483
BPX63,
BP103,
LD242,
SFH464,
TcS25
E7800"
/lE100mA
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Untitled
Abstract: No abstract text available
Text: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process
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LD242
GET06625
BP103,
BPX63,
SFH464,
SFH483
0HSD1S37
/lE100mA
0H801037
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Untitled
Abstract: No abstract text available
Text: Infrared Emitter Dimensions in Inches mm .204 (5.2) .17^ (4.5) .157(4.0) 141 (3.6) - 122(3 .1) " 114(2.9) ' .138 (3.5) .024 (.6) .016 (.4)' ^— Ctiip Position .248(6 .3) 1.140(g9) 1.061 (27) FEATURES • GaAs IR emitter made In a liquid phaae epitaxy process
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SFH309
SFH487,
100mA,
/lE100mA
SFH409
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