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    Untitled

    Abstract: No abstract text available
    Text: LED16FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED16FC-PR LED16FC-PR 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED16FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED16FC-TEC LED16FC-TEC 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED16FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED16FC-PR-WIN LED16FC-PR-WIN 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED16FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates. Solid solutions AlGaAsSb are used in active layer. Wide band gap solid


    Original     		PDF LED16FC-SMD5 LED16FC-SMD5 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED16FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED16FC LED16FC 670x770 150-200mA

    Untitled

    Abstract: No abstract text available
    Text: LED16FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap


    Original     		PDF LED16FC-TEC-PR LED16FC-TEC-PR 670x770 150-200mA

    Product line

    Abstract: No abstract text available
    Text: Mid-IR Products Product Line Overview Mid-Infrared Light Emitting Diodes and Photodiodes We offer: • • • • • Standard LEDs Flip-Chip bounded LEDs Multi Chip LEDs PDs LED drivers and PD amplifiers Standard LEDs LED chips with circular or ring top contact


    Original     		PDF LED18 LED19 LED20 LED21 LED22 LED23 LED29 LED34 LED35 LED36 Product line

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


    Original     		PDF RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI