MNR14EOABJ103
Abstract: nichicon c86 sot23 63 sot23 6pin RC0603 c143 MCR10-EZHM-J MCR10-EZHM RN56 Z4 SOT23
Text: Sandpoint_X3B_BOM.txt # Board Station BOM file # date : Wednesday May 23, 2001; 16:19:41 # Variant : No_Stuff Sandpoint X3B ITEM_NUMBER REFERENCE COMPANY PART NO. COUNT 1 2 05085C103MA11A 05085C104MA11A 1 9 0603YC104JAT2A 49 4 5 6 C1 C71 C90 C91 C92 C93 C94 C95 C96
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05085C103MA11A
05085C104MA11A
0603YC104JAT2A
218-8LPST
500ns
sop28
am29f040
plcc32,
74lvt16374
tssop48,
MNR14EOABJ103
nichicon
c86 sot23
63 sot23 6pin
RC0603
c143
MCR10-EZHM-J
MCR10-EZHM
RN56
Z4 SOT23
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R315 crystal
Abstract: sn74f14 smd transistor h5c transistor c413 2062-0000-00 transistor c143 Motorola R347 U31 C205 RN-42 R349
Text: Yellowknife X4 Bill of Materials 10/7/97 # Board Station BOM file # date : Tuesday October 7, 1997; 11:32:10 ITEM_NUMBER 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 REFERENCE J44 J41 J42 J12 J29 J32 J34 J35 J38 J39 J40 J58 J59 J60 J62 J50
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16bit,
74F138
PC87308IBNVUL
SL82C565
SMD100
SN74ALVCH16501DGG
pc87307vul,
sl82c565
QFP208,
smd100,
R315 crystal
sn74f14
smd transistor h5c
transistor c413
2062-0000-00
transistor c143
Motorola R347
U31 C205
RN-42
R349
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Intel BGA
Abstract: ROHM R25 c143 epson c45 LH5168SHN RN66 IEEE-1386 epson c67 145154-4 c86 sot23
Text: # Board Statio n BOM file # date : Wednesday November 29, 2000; 11:57:19 # Variant : No_Stuff Sandpoint_X Updated on 2 ITEM COUNT REFERENCE 1 COMPANY PART NO. ppceval-sp3 rev x3 1 2 C1 05085C103MA11A 1 3 C71 C90 C91 C92 C93 C94 C95 C96 C138 05085C104MA11A
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05085C103MA11A
05085C104MA11A
0603YC104JAT2A
tqfp52,
tqfp52
pc87308vul
pqfp160,
pqfp160
rc28f800f3b120
bga64,
Intel BGA
ROHM R25
c143
epson c45
LH5168SHN
RN66
IEEE-1386
epson c67
145154-4
c86 sot23
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62512 RAM
Abstract: RAM 62128 LTC695-3 LTC695 LTC694 69433
Text: LTC694-3.3/LTC695-3.3 3.3V Microprocessor Supervisory Circuits U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO UL Recognized File # E145770 Guaranteed Reset Assertion at VCC = 1V Pin Compatible with LTC694/LTC695 for 3.3V Systems
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LTC694-3
3/LTC695-3
E145770
LTC694/LTC695
200ms
LH5116S
LTC1326
LTC1536
62512 RAM
RAM 62128
LTC695-3
LTC695
LTC694
69433
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SECME 09-03201-02
Abstract: secme 090320102 Nichicon Header, 1x4 grm39COG101J050AD mtg156 646255-1 09_03201_02 MNR14EOABJ330 MCR10-EZHM
Text: untitled 2 Friday, February 26, 1999 Page 1 of 6 Printed: 3:07:20 PM # Board Station BOM file # date : Tuesday December 15, 1998; 15:40:03 ITEM_NUMBER REFERENCE COMPANY PART NO. COUNT 1 C1 C2 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 C21 C22 C24 C25
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0603YC104JAT2A
08vul
pqfp160,
74f138
74f14d
mpc949
tqfp52,
qs3253
qsop16,
SECME 09-03201-02
secme 090320102
Nichicon
Header, 1x4
grm39COG101J050AD
mtg156
646255-1
09_03201_02
MNR14EOABJ330
MCR10-EZHM
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LTC 433
Abstract: LTC695-3 LTC695CN LTC6948
Text: LTC694-3.3/LTC695-3.3 3.3V Microprocessor Supervisory Circuits FEATURES DESCRIPTION n The LTC 694-3.3/LTC695-3.3 provide complete 3.3V power supply monitoring and battery control functions. These include power-on reset, battery back-up, RAM write protection, power failure warning and watchdog timing. The
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LTC694-3
3/LTC695-3
LTC694/LTC695
LH5168SH
LH5116S
LTC1326
LTC1536
69453fb
LTC 433
LTC695-3
LTC695CN
LTC6948
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LTC694CN-3
Abstract: LTC695-3.3 LTC695-3 LTC695 LTC694 LT1129
Text: LTC694-3.3/LTC695-3.3 3.3V Microprocessor Supervisory Circuits U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Guaranteed Reset Assertion at VCC = 1V Pin Compatible with LTC694/LTC695 for 3.3V Systems 200µA Typical Supply Current Fast 30ns Typ On-Board Gating of RAM Chip
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LTC694-3
3/LTC695-3
LTC694/LTC695
SO-16
200ms
function15
16-Lead
SOL16
LTC694CN-3
LTC695-3.3
LTC695-3
LTC695
LTC694
LT1129
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Untitled
Abstract: No abstract text available
Text: CM O S 64K 8K x 8 Static Ram FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168SH is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.) • Power consumption:
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LH5168SH
28-PIN
28-pin,
450ansition
5168S-5
450-mil
OP28-P-45Q)
LH5168SHN
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LH5168ST
Abstract: No abstract text available
Text: CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168ST is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times: 500 ns (MAX.) • Power consumption: Operating:
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28-pin,
LH5168ST
28-PIN
LH5168ST
TSOP28-P-0813)
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Untitled
Abstract: No abstract text available
Text: LH5168SH C M O S 64K 8K x 8 Static Ram FEATURES DESCRIPTION • 8 ,1 9 2 x 8 bit organization The LH5168SH is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (M AX.) • Low current consumption:
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LH5168SH
LH5168SH
28-PIN
28-pin,
450-mil
OP28-P-450)
LH5168SHN
68shn
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LH5168ST
Abstract: SHARP 357
Text: CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168ST is a static RAM organized as 8,192 x 8 bits. II is fabricated using silicon-gate CMOS process technology. • Access tim e: 500 ns (MAX.) • Current consum ption:
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LH5168ST
LH5168ST
28-pin,
TSOP28-P-0813)
SHARP 357
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DDCH715
Abstract: LH5168SHN
Text: SHARP CORP LH5168SH FEATURES • 8,192 x 8 bit organization • Access time: 500 ns MAX. • Low-current consumption: Operating: 20 mA (MAX.), ]> CMOS 64K (8K The LH5168SH is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS
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LH5168SH
28-pin,
450-mil
LH5168SH
28-pin
OP28-P-45Q)
LH5168SHN
DDCH715
LH5168SHN
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sharp lh51
Abstract: lh5168sh
Text: LH5168SH CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168SH is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.) • Power consumption:
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LH5168SH
LH5168SH
28-PIN
28-pin,
450-mil
5168SH-5
SOR28-P-450)
sharp lh51
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Untitled
Abstract: No abstract text available
Text: LH5168S CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168S is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times: 500 ns (MAX.) • Power consumption:
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LH5168S
28-pin,
LH5168S
516BS-7
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MB81C78A-35
Abstract: LH5164-10 MB81C78A MB81C78-45 LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12
Text: CMOS 6 4 K m £ tt £ ¡á£ÍEH OC X TAAC •ax ns) TCAC (ns) ■f y ? S t a t i c RAM ( 81 9 2 x 8 ) ft ft TOE ■ax (ns) TOH min (ns) TOD max (ns) TWP min (ns.) TDS IE (ns) TDH min (ns) TWD min (ns) TWR max (ns) V I or V C C (V) 2 8 P I N IDO max (mA)
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28PIN
LC3664R/RL-10
LC3664RM/RML-10
64RS/RSL-10
LC36640-70
M5M5165P-70L
M5M5178P-35
M5M5178P-45
M5M5178P-55
MB81C78-45
MB81C78A-35
LH5164-10
MB81C78A
LH5268A-10LL
LH5164L-15
LC3664BL-10
LH5164D
LH5164D/N-10L
LC3664BL-12
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lh57257
Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429
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IR2E201
IR2E24
IR2E27/A
IR2E28
IR2E29
IR2E30
IR2E31/A
IR2E32N9
IR2E34
IR2E41
lh57257
IR2E31
IR2E01
IR2C07
IR2E27
IR2E19
IR2E31A
IR3n06
IR2E02
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BNK-17
Abstract: No abstract text available
Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85
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LH5116/NA/D-10
LH5116H/HN/HD-10
LH5116SN
24SOP
28SOJ
400mil)
LH521002BK/BNK-17/L
LH521002BK/BNK-20/L
LH521002BK/BNK-2S/L
LH521007AK-20
BNK-17
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lh5168
Abstract: No abstract text available
Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full
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LH5116
LH51116H
LH5116S
LH5168
LH5168H
LH5168V
LH5168S
LH5168SH
LH5164AH
5164AV
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Untitled
Abstract: No abstract text available
Text: C M O S 64K 8K x 8 Static Ram • 8,192 x 8 bit organization • Access time: 500 ns (MAX.) • Low-current consumption: Operating: 20 mA (MAX.), 10 mA (tRC, tw c = 1 nS) Standby: 1 p.A (MAX.) @ 70°C 3 |iA (MAX.) @ 85°C • • Fully-static operation Three-state outputs
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28-pin,
450-mil
LH5168SH
5160S-5
LH5168SHN
450-mi!
SQP28-P-450)
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LHS168
Abstract: LH52252A LH52252
Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j
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LH5116
LH5116H
LH5116S
LH5117
LH511
LH5118
LH5118H
LH52252A
LH52253
LH521002A
LHS168
LH52252
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100 10L AD
Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
Text: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10
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LH5116/NA/D-10
100LQFP
H/AHN/AHD/AHT-10L
LH5164AVN/AVT
LH5164AVHN/AVHT
LH5164ASHN/ASHT
LH51256/N-10L
LH51V1032C4M-15
LH51V1032C4M-17
LH5268A/AN/AD-1
100 10L AD
LH521007AK-25
LH5168ST
LH5168SHN
lh5168
LH521002AK20
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Untitled
Abstract: No abstract text available
Text: / T L i n e / \ ß TECHNOLOGY DCSCRIPTIOfl F€RTUR€S • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ LTC694-3.3/LTC695-3.3 3.3V M ic ro p ro c e s s o r S u p e rviso ry C ircu its Guaranteed Reset Assertion at Vcc = 1V Pin Compatible with LTC694/LTC695 for 3.3V
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LTC694-3
3/LTC695-3
LTC694/LTC695
S0-16
200ms
a100Q
LTC69X
74HC4016
0D110Ã
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