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    LH534000 Search Results

    LH534000 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH534000 Sharp CMOS 4M Mask ROM Scan PDF
    LH534000BD-S Sharp CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Programmable ROM Scan PDF
    LH534000BN-S Sharp CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Programmable ROM Scan PDF
    LH534000BTR-S Sharp CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Programmable ROM Scan PDF
    LH534000BT-S Sharp CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Programmable ROM Scan PDF

    LH534000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48-PIN

    Abstract: LH534
    Text: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words × 16 bit organization (Word mode) • Access times: 500 ns (2.6 V ≤ VCC < 4.5 V) 200 ns (4.5 V ≤ VCC ≤ 5.5 V) • Wide range power supply: 2.6 to 5.5 V • Static operation


    Original     		PDF LH534000B-S 8/256K 40-PIN 40-pin, 600-mil 525-mil 48-pin, LH534000B-S 48-PIN LH534

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: LH534000B-S CMOS 4M 512K x 8/256K x 16 3V-Drive MROM PIN CONNECTIONS FEATURES • 524,288 words x 8 bit organization x 16 bit organization 40-PIN DIP 40-PIN SOP (Byte mode) 262,144 words TOP VIEW r A17 C (Word mode) • Access times: 500 ns (2.6 V < Vcc < 4.5 V)


    OCR Scan     		PDF LH534000B-S 40-pin, 600-mil 525-mil 48-pin, 8/256K 40-PIN

    sharp mask rom 44-pin

    Abstract: sharp mask rom AE-C17
    Text: LH534000B FEATURES • Memory organization selection: 524,288 x 8 bit byte mode 262,144 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |aW (MAX.)


    OCR Scan     		PDF LH534000B 8/256K 40-pin, 600-mil 525-mil 48-pin, 44-pin, LH534000B sharp mask rom 44-pin sharp mask rom AE-C17

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH534000B-S FEATURES • Low-power supply: 2.6 to 5.5 V • 524,288 x 8 bit organization Byte mode 262,144 x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Program m able ROM PIN CONNECTIONS TOP VIEW 40-PIN DIP 40-PIN SOP


    OCR Scan     		PDF LH534000B-S 40-pin, 600-mil 525-mil 44-pin, 48-pin, 8/256K 40-PIN

    Untitled

    Abstract: No abstract text available
    Text: LH534000B FEATURES • Memory organization selection: 524,288 x 8 bit byte mode 262,144 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 (MAX.)


    OCR Scan     		PDF LH534000B 40-pin, 600-mil 525-mil 48-pin, 44-pin, 534000B

    48-PIN

    Abstract: No abstract text available
    Text: LH534000B-S FEATURES CMOS 4M 512K x 8/256K x 16 3V-Drive M ask-Program m able ROM PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW 1« \ 40 □ Ay C 2 39 I] Ag


    OCR Scan     		PDF LH534000B-S 8/256K 40-pin, 600-mil 525-miI 48-pin, 12x18 LH534000B-S 40-PIN 48-PIN

    Untitled

    Abstract: No abstract text available
    Text: LH534000B FEATURES • CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM PIN CONNECTIONS Memory organization selection: 524 ,2 8 8 x 8 bit (byte mode) 2 6 2 ,1 4 4 x 16 bit (word mode) • B YTE input pin selects bit configuration • Access time: 200 ns (M AX.)


    OCR Scan     		PDF LH534000B 40-pin, 600-m 525-m 48-pin, 44-pin, LH534000B

    Untitled

    Abstract: No abstract text available
    Text: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW / 1* 40 □ 2 39 □ Ag A6 □ 3 38 □ A 10 5 c


    OCR Scan     		PDF LH534000B-S 8/256K 40-PIN 40-pin, 600-mil 525-mil 48-pin, LH534000B-S

    Untitled

    Abstract: No abstract text available
    Text: LH534000B-S FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) CMOS 4M (512K x 8/256K x 16) 3V-Drive Mask-Programmable ROM PIN CONNECTIONS 40-P IN D IP 40-PIN S O P T O P V IEW f a 17 C 1» N 40 I ] Ag


    OCR Scan     		PDF LH534000B-S 40-pin, 600-mil 525-mil 48-pin, 8/256K 40-PIN 12x18

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH534000B-S CM OS 4M 512K x 8 / 256K x 16 3V-Drive M ask-P rogram m able ROM PIN CONNECTIONS FEATURES • Low-power supply: 2.6 to 5.5 V • 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) 4 0 -P IN D IP 4 0 -P IN S O P


    OCR Scan     		PDF LH534000B-S 40-pin, 600-mil 525-mil 44-pin, 48-pin, 300B-S

    lh5s4

    Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
    Text: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.


    OCR Scan     		PDF LH53H4100 LH53H4100D/N LH5H41XX) LH53H4100D LH53H4100N 32-pin DIP032-P-0600) OP032-P-0525) A0-A18 lh5s4 lh5348 LH5s lh5s47xx 48-TSOP LH53H4100N lh534y00d 48TSOP sharp mask rom

    umt block diagram

    Abstract: sharp mask rom ah rjt LH534000 4194304-BIT mask programmable read only
    Text: SHARP CORPORATION . • technical No. E A 6 1 5 3 5 literature FOR CMOS 4M M a s k ROM MODEL Wo. PATE LH 5 3 4 0 0 0 February 2 5 , 1 9 8 7 * TM« technical literature Is subject to change without notice.* SHARP I N T E 6 R A T E D c o r p o r a t i o n


    OCR Scan     		PDF EA61535 4194304-Bit LH534000 LH534000 288x8 144X16 125mW umt block diagram sharp mask rom ah rjt mask programmable read only

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


    OCR Scan     		PDF 28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


    OCR Scan     		PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    lh5348

    Abstract: lh5s4 48TSO
    Text: ü fi LH53V4R00 LH53V4R00-2 • Description ■ Pin Connect for T h e L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U ser's N o . : L H 5V 4R X X is a CM OS 4 M -b it m ask-program m able ROM 32-pin SOP organized as 524 288 X 8 bits. It provides a high-speed access time o f 120/150 ns with low


    OCR Scan     		PDF LH53V4R00 LH53V4R00-2 32-pin LHS3V4R00-2 lh5348 lh5s4 48TSO

    lh5348

    Abstract: TSOP032-P-0820 lh5s4 flash memory sop 32-pin lh5348xx lh5s47xx
    Text: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Description Pin Connection T he L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U s e r's N o. : LH5V4RXX is a CM O S 4M -bit m ask-program m able ROM


    OCR Scan     		PDF LH53V4R00 LH53V4R00-2 LH53V4R00N/T, LH53V4R00N/T-2 LH53V4R00 LH53V4R00N1LH53V4R00N-2 32-pin lh5348 TSOP032-P-0820 lh5s4 flash memory sop 32-pin lh5348xx lh5s47xx

    lh5s4

    Abstract: lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH53V4R00N LH5H41XX TSOP032-P-0820
    Text: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Description Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Pin Connection The L H 53V 4R 00N /T , L H 53V 4 R 0 0 N /T -2 U ser’s N o. : LH5V4RXX is a CMOS 4M -bit mask-programmable ROM 32-pin SOP


    OCR Scan     		PDF LH53V4R00 LH53V4R00-2 LH53V4R00N/T, LH53V4R00N/T-2 32-pin LH53V4R00N lh5s4 lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH5H41XX TSOP032-P-0820

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


    OCR Scan     		PDF LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100