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Toshiba America Electronic Components TC5116100FT80 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TC5116100FT80		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TC5116100 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TC5116100		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

TC5116100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,	OCR Scan	TC5116100BSJ-60/70 5116100BS 51161OOBSJ 300mil)	PDF
TC5116100 Abstract: No abstract text available Text: TOSHIBA TC5116100J/Z/FT-60/70 16,777,216 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC5116100J/Z/FT is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC5116100J/Z/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit	OCR Scan	TC5116100J/Z/FT-60/70 TC5116100J/Z/FT TC5116100J/Z/FT. TC5116100	PDF
TC5116100BSJ60 Abstract: TC5116100BSJ70 TC5116100 Text: TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM Description The TC51161OOBSJ is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC51161OOBSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,	OCR Scan	TC5116100BSJ-60/70 TC51161OOBSJ TC51161 300mil) TC5116100BSJ60 TC5116100BSJ70 TC5116100	PDF
TC5116100 Abstract: No abstract text available Text: TOSHIBA TC5116100J/Z/FF60/70 16,777,216 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC5116100J/Z/FT is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC5116100J/Z/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit	OCR Scan	TC5116100J/Z/FF60/70 TC5116100J/Z/FT theTC51161 TC5116100J/Z/FT. TC5116100	PDF
TA8172AF Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16	OCR Scan	015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P	PDF
tr 30 f 124 Abstract: V16105 Text: X6 C a pa city 4 M Bit T y p e No. T C 5 1 4 2 8 0 B J L L / B Z L L -7 0 262144 70 20 35 130 T C 5 1 4 2 8 0 B J L L 7 B Z L L -8 0 x 18 80 20 40 150 Max. Power Dto8 pation<mW) A ctive S t a n d bv 605 1.1 200\|jA) 5V±10 % 5 23 T C 5 1 161OOJ/Z/FT/TR-60	OCR Scan	161OOJ/Z/FT/TR-60 C5116100BJfiSJ/BZ/BFTfiST/GrrFVBSFr6VK-SO TC51161OOBJflSJ/BZBFT/BST/BTR/BSHrBVK-M TC5118100 JBSJBZ/BFT/BST/BTR/BSHrBVK-70 16400J/2/FT/TR-60 16400J/Z/FT/TR-70 TC511M006J/BSJBZ/BnflST/BTR/BSFr BVK-50 05116400BJ/BSJBZ/BFTilST/BTR/6SflrBVK-flO tr 30 f 124 V16105	PDF
al 232 nec Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258	OCR Scan	KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference	PDF