intersil jfet
Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)
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3N170
3N171
3N170
3N171
300mW
intersil jfet
intersil JFET TO 18
U308
DIODE A6
P-channel N-Channel power mosfet ENHANCEMENT
2n3955 transistor spice
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2N4351
Abstract: A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet
Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures
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2N4351
2N4351
100mA
375mW
100mA
A6 ZENER DIODE
"Dual npn Transistor"
J201 spice
intersil JFET TO 18
J201 N-channel JFET to 90
intersil JFET
JFET NPN AMPLIFIER
bare Die mosfet
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STPA001A
Abstract: STPA001
Text: STPA001 4 x 50 W MOSFET quad bridge power amplifier Datasheet − production data Features • Multipower BCD technology ■ High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max. ■ MOSFET output power stage
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STPA001
STPA001A
STPA001
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Untitled
Abstract: No abstract text available
Text: STPA001 4 x 50 W MOSFET quad bridge power amplifier Datasheet - production data • Internally fixed gain 26 dB '!0'03 '!0'03 Flexiwatt27 Flexiwatt25 Features Description Multipower BCD technology The STPA001 is a breakthrough MOSFET technology class AB audio power amplifier
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STPA001
Flexiwatt27
Flexiwatt25
STPA001
DocID023043
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TDA7576B
Abstract: TDA7576 mosfet power amplifier
Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %
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TDA7576B
Multiwatt15
TDA7576B
TDA7576
mosfet power amplifier
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TDA7576B
Abstract: TDA7576
Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %
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TDA7576B
Multiwatt15
TDA7576B
TDA7576
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TDA7576
Abstract: No abstract text available
Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 @ 24 V, 1 kHz; 10 %
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TDA7576B
Multiwatt15
TDA7576
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Untitled
Abstract: No abstract text available
Text: TDA75610LV 4 x 45 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ High efficiency class SB
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TDA75610LV
Flexiwatt27
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Untitled
Abstract: No abstract text available
Text: TDA75610DLVPD 4 x 45 W differential power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Differential input
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TDA75610DLVPD
PowerSO36
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TDA7569B
Abstract: No abstract text available
Text: TDA7569BDLVPD 4 x 50 W differential power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Differential input
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TDA7569BDLVPD
PowerSO36
TDA7569B
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TDA7569B
Abstract: tda7569 4.1 Channel True MOSFET Car Power Amplifier
Text: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency ■
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TDA7569BLV
TDA7569B
tda7569
4.1 Channel True MOSFET Car Power Amplifier
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tda7569
Abstract: TDA7569B TDA7569BLV TDA7569BLVPDTR tda756 4.1 Channel True MOSFET Car Power Amplifier
Text: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency ■
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TDA7569BLV
tda7569
TDA7569B
TDA7569BLV
TDA7569BLVPDTR
tda756
4.1 Channel True MOSFET Car Power Amplifier
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U420B
Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
Text: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary
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Power247TM,
U420B
IRFR P-Channel MOSFET
sfr 135
BALLAST CFL
U210B
U220B
cfl ballast
CFL lamp
Complementary MOSFETs
electronic ballast
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TDA7569B
Abstract: No abstract text available
Text: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency ■
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TDA7569BLV
Flexiwatt27
TDA7569B
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gs 069
Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
gs 069
PowerPACK 1212-8
Si4946BEY
Si2314EDS
SI4430BDY
tsop6 marking 345
TN2404K
1206-8 chipfet layout
Si4630DY
SUM110N04-04
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STMPS2252TTR
Abstract: STMPS2242MTR STMPS2242 STMPS2252 STMPS2252MTR STMPS2262 STMPS2262MTR STMPS2272 STMPS2272MTR 2272 l2
Text: STMPS2242, STMPS2252 STMPS2262, STMPS2272 Enhanced dual channel power switches Features • 100 mΩ high-side MOSFET switch ■ 500 mA/1000 mA continuous current per channel ■ Thermal protection ■ Independent short-circuit protection with overcurrent logic output
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STMPS2242,
STMPS2252
STMPS2262,
STMPS2272
A/1000
STMPS2252TTR
STMPS2242MTR
STMPS2242
STMPS2252
STMPS2252MTR
STMPS2262
STMPS2262MTR
STMPS2272
STMPS2272MTR
2272 l2
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80n70
Abstract: TDA7563PD TDA7563PDTR DSA0035671
Text: TDA7563PD Multifunction quad power amplifier with built-in diagnostics features Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Non switching high efficiency ■ High output power capability 4x28W/4Ω @ 14.4V, 1kHz, 10% THD, 4x40W EIAJ
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TDA7563PD
4x28W/4
4x40W
4x72W/2
/16dB
PowerSO36
80n70
TDA7563PD
TDA7563PDTR
DSA0035671
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2N6898 JANTX
Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds
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2N6898
2N6898
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6898 JANTX
2N6898 JANTXV
TRANSISTOR C 557 B
QPL-19500
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QPL-19500
Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits
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2N6903
2N6903
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
QPL-19500
2n6901
2N6758 JANTX
2N6903 JANTX
2N6898 JANTX
2N6898
2N6756
2N6758
2N6760
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mosfet 2n6788
Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Text: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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2N6788
2N6788
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
mosfet 2n6788
LH0063
QPL-19500
2N6792 JANTXV
2N6788 JANTXV
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2N6901 JANTX
Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements
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2N6901
2N6901
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6901 JANTX
2N6901 JANTXV
2N6901 JANTX harris
2n6898
transistor h44
2N6897 JANTXV
2N6897
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2N6758
Abstract: 2N6902 QPL-19500
Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,
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2N6902
92cs-3374i
2N6902
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
2N6758
QPL-19500
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transistor 65 C 3549
Abstract: 2N6800 2N6756 LH0063 QPL-19500 ICI 555
Text: Standard Power MOSFETs File N u m b e r 2N6800 1904 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3A, 400V f D S o n = 1 Q N -C H A N N E L E N H A N C E M E N T M OD E D Features: • m m m m SOA is pow er-dissipation lim ited
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2N6800
2N6800
2N6796
O-2I35AF
O-205AF
T0-205AF
2N6802
MIL-S-19500/
transistor 65 C 3549
2N6756
LH0063
QPL-19500
ICI 555
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2N6782
Abstract: 2n6800 LH0063 QPL-19500
Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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2N6782
2N6782
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
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