TDA7569B
Abstract: No abstract text available
Text: TDA7569BDLVPD 4 x 50 W differential power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Differential input
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TDA7569BDLVPD
PowerSO36
TDA7569B
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Untitled
Abstract: No abstract text available
Text: TDA75610LV 4 x 45 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ High efficiency class SB
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TDA75610LV
Flexiwatt27
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TDA7563PD
Abstract: TDA7563PDTR
Text: TDA7563PD Multifunction quad power amplifier with built-in diagnostics features Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Non switching high efficiency ■ High output power capability 4x28W/4Ω @ 14.4V, 1kHz, 10% THD, 4x40W EIAJ
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TDA7563PD
4x28W/4
4x40W
4x72W/2
/16dB
PowerSO36
TDA7563PD
TDA7563PDTR
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BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
BS250KL
tsop6 marking 345
SUD50P08
SI3437
SUD19P06-60L
MOSFET SUB75P03
tsop6 marking 443
Si5947DU
Si1471DH
SI1073X
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Siliconix mosfet guide
Abstract: list of P channel power mosfet Siliconix Selection Guide Si147DH Si1471DH 1206-8 chipfet layout P-channel power mosfet SO-8 power selector guide SiA513DJ Si1065X
Text: N & P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
Siliconix mosfet guide
list of P channel power mosfet
Siliconix Selection Guide
Si147DH
Si1471DH
1206-8 chipfet layout
P-channel power mosfet SO-8
power selector guide
SiA513DJ
Si1065X
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TDA7569B
Abstract: No abstract text available
Text: TDA7569BLV 4 x 50 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ Class SB high efficiency ■
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TDA7569BLV
Flexiwatt27
TDA7569B
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gs 069
Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
gs 069
PowerPACK 1212-8
Si4946BEY
Si2314EDS
SI4430BDY
tsop6 marking 345
TN2404K
1206-8 chipfet layout
Si4630DY
SUM110N04-04
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j350 TRANSISTOR
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.
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MHT1006N
MHT1006NT1
j350 TRANSISTOR
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TDA7562
Abstract: No abstract text available
Text: TDA7562B 4 x 46 W multifunction quad power amplifier with built-in diagnostics features Features • MOSFET output power stage ■ High output power capability 4 x 25 W/4 @ 14.4 V, 1 kHz, 10 % THD ■ Max. output power 4 x 68 W/2 , 4 x 42 W/4
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TDA7562B
Flexiwatt27
TDA7562
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Untitled
Abstract: No abstract text available
Text: TDA7563B 4 x 50 W multifunction quad power amplifier with built-in diagnostics feature Datasheet production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output '!0'03 '!0'03 '!0'03 ■ New high efficiency class SB
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TDA7563B
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TDA75610
Abstract: TDA75610LV TDA75610LVP TDA75610LVPDTR TDA7561 4x25W k734 car woofer amplifier circuit diagram Power-SO36 tda75610lv
Text: TDA75610LV 4 x 45 W power amplifier with full I2C diagnostics, high efficiency and low voltage operation Datasheet − production data Features • Multipower BCD technology ■ MOSFET output power stage ■ DMOS power output ■ High efficiency class SB
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TDA75610LV
TDA75610
TDA75610LV
TDA75610LVP
TDA75610LVPDTR
TDA7561
4x25W
k734
car woofer amplifier circuit diagram
Power-SO36 tda75610lv
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TDA7576
Abstract: No abstract text available
Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 @ 24 V, 1 kHz; 10 %
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TDA7576B
Multiwatt15
TDA7576
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TDA7576B
Abstract: TDA7576 mosfet power amplifier
Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %
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TDA7576B
Multiwatt15
TDA7576B
TDA7576
mosfet power amplifier
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TDA7576B
Abstract: TDA7576
Text: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %
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TDA7576B
Multiwatt15
TDA7576B
TDA7576
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QPL-19500
Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits
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2N6903
2N6903
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
QPL-19500
2n6901
2N6758 JANTX
2N6903 JANTX
2N6898 JANTX
2N6898
2N6756
2N6758
2N6760
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2N6898 JANTX
Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds
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2N6898
2N6898
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6898 JANTX
2N6898 JANTXV
TRANSISTOR C 557 B
QPL-19500
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2N6901 JANTX
Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements
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2N6901
2N6901
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6901 JANTX
2N6901 JANTXV
2N6901 JANTX harris
2n6898
transistor h44
2N6897 JANTXV
2N6897
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2N6758
Abstract: 2N6902 QPL-19500
Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,
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2N6902
92cs-3374i
2N6902
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
2N6758
QPL-19500
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mosfet 2n6788
Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Text: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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2N6788
2N6788
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
mosfet 2n6788
LH0063
QPL-19500
2N6792 JANTXV
2N6788 JANTXV
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2N6792 JANTX
Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds
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2N6792
2N6792
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6792 JANTX
C055
LH0063
QPL-19500
2N6904
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transistor 65 C 3549
Abstract: 2N6800 2N6756 LH0063 QPL-19500 ICI 555
Text: Standard Power MOSFETs File N u m b e r 2N6800 1904 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3A, 400V f D S o n = 1 Q N -C H A N N E L E N H A N C E M E N T M OD E D Features: • m m m m SOA is pow er-dissipation lim ited
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2N6800
2N6800
2N6796
O-2I35AF
O-205AF
T0-205AF
2N6802
MIL-S-19500/
transistor 65 C 3549
2N6756
LH0063
QPL-19500
ICI 555
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2N6155
Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited
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2N6755,
2N6756
0V-100V
2N6755
2N6756
2N6796
O-2I35AF
O-205AF
2N6800
2N6155
2n6156
qpl-19500
2N6901
D-05N
md-141
2N67
2N6756 JANTX
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2N6782
Abstract: 2n6800 LH0063 QPL-19500
Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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2N6782
2N6782
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
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2N6851
Abstract: 2N6851 JANTX 2n6800
Text: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d
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2N6851
-200V
cs-43
2N6851
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6851 JANTX
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