TS20100CG
Abstract: ntsj20100ctg ntsj2010 ntsj20100 NTSB20100CT
Text: NTST20100CT, NTSB20100CT-1G, NTSJ20100CTG, NTSB20100CTG Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.50 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low
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NTST20100CT,
NTSB20100CT-1G,
NTSJ20100CTG,
NTSB20100CTG
O-220AB
NTST20100CT/D
TS20100CG
ntsj20100ctg
ntsj2010
ntsj20100
NTSB20100CT
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PDF
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TS30100SG
Abstract: NTST30100SG TS30100 NTSB30100S-1G TS3010
Text: NTST30100SG, NTSB30100S-1G Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Exceptionally Low VF = 0.39 V at IF = 5 A 1 2, 4 Features 3 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage
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Original
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NTST30100SG,
NTSB30100S-1G
O-220AB
TS30100SG
NTST30100S/D
NTST30100SG
TS30100
TS3010
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PDF
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Untitled
Abstract: No abstract text available
Text: NTSV20U80CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.485 V at IF = 5 A http://onsemi.com Features PIN CONNECTIONS • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • 1 Forward Voltage and Low Leakage
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NTSV20U80CT
NTSV20U80CT/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS8100MFS, NRVTS8100MFS Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability
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NTS8100MFS,
NRVTS8100MFS
NTS8100MFS/D
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PDF
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ushio
Abstract: Lithography Ushio Taiwan LS365 Ushio America 5440
Text: 【UX4-3Di Product Data Sheet】 Comparison between lithography methods available for HVM of 3D LSIs UX4-3Di FFPL 200 Specifications Resolution: Wavelength: Overlay Accuracy: Throughput: Wafer Size: Wafer Transfer Method: 3 µm L/S 365 nm Top ±1 µm, bottom ±1 µm
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CA90630
200-mm
ushio
Lithography
Ushio Taiwan
LS365
Ushio America
5440
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS1545EMFS, NRVTS1545EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Leakage Fast Switching with Exceptional Temperature Stability
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Original
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NTS1545EMFS,
NRVTS1545EMFS
NTS1545EMFS/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS12100MFS Very Low Forward Voltage Trench-based Schottky Rectifier Features http://onsemi.com • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability
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Original
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NTS12100MFS
NTS12100MFS/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS260SF Very Low Forward Voltage Trench-based Schottky Rectifier Features http://onsemi.com • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability
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Original
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NTS260SF
NTS260SF/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS1545MFS, NRVTS1545MFS Exceptionally Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability
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Original
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NTS1545MFS,
NRVTS1545MFS
NTS1545MFS/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS12100EMFS, NRVTS12100EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability
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Original
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NTS12100EMFS,
NRVTS12100EMFS
NTS12100EMFS/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS10120EMFS, NRVTS10120EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability
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Original
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NTS10120EMFS,
NRVTS10120EMFS
NTS10120EMFS/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS12100MFS, NRVTS12100MFS Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability
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Original
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NTS12100MFS,
NRVTS12100MFS
NTS12100MFS/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS10100MFS, NRVTS10100MFS Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability
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Original
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NTS10100MFS,
NRVTS10100MFS
NTS10100MFS/D
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PDF
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CHA3093a
Abstract: CHA3093a99F/00
Text: CHA3093a 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
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CHA3093a
20-40GHz
20-40GHz
20dBm
300mA
CHA3093
DSCHA30937290
CHA3093a
CHA3093a99F/00
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PDF
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Untitled
Abstract: No abstract text available
Text: NTS12120EMFS, NRVTS12120EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability
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Original
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NTS12120EMFS,
NRVTS12120EMFS
NTS12120EMFS/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTSV30100SG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.41 V at IF = 5 A Features http://onsemi.com 1 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage
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NTSV30100SG
220AB
NTSV30100S/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTSV20120CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.557 V at IF = 5 A http://onsemi.com Features PIN CONNECTIONS • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage
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Original
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NTSV20120CT
220AB
NTSV20120CT/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTST30100SG, NTSB30100S-1G Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Exceptionally Low VF = 0.39 V at IF = 5 A 1 2, 4 Features 3 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage
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NTST30100SG,
NTSB30100S-1G
220AB
NTST30100S/D
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PDF
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multilayer lithography ic fabrication
Abstract: Jewell Instruments
Text: EUV Lithography—The Successor to Optical Lithography? John E. Bjorkholm Advanced Lithography Department, Technology and Manufacturing Group, Santa Clara, CA. Intel Corporation Index words: EUV lithography, lithography, lithography Abstract This paper discusses the basic concepts and current state
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Untitled
Abstract: No abstract text available
Text: DLPA200 www.ti.com DLPS015B – APRIL 2010 – REVISED AUGUST 2012 DLP DLPA200 DMD Micromirror Driver Check for Samples: DLPA200 FEATURES 1 • • • • • APPLICATIONS • • • Industrial: – Direct Imaging Lithography – Laser Marking and Repair Systems
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DLPA200
DLPS015B
DLPA200
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PDF
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dlp dmd chip xga
Abstract: dlp dmd chip DAD2000
Text: DLPA200 www.ti.com DLPS015C – APRIL 2010 – REVISED SEPTEMBER 2013 DLP DLPA200 DMD Micromirror Driver Check for Samples: DLPA200 FEATURES 1 • • • • • APPLICATIONS • • • Industrial: – Direct Imaging Lithography – Laser Marking and Repair Systems
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DLPA200
DLPS015C
DLPA200
80-pin,
dlp dmd chip xga
dlp dmd chip
DAD2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 管理計画 USP-10 CONTROL PLAN (USP-10) 代表例 工程記号 No. 工程名 Flow Process 1 ｳｴﾊ受入 ◇ Wafer incoming 2 酸化 ○ Oxide 3 酸化膜ﾁｪｯｸ ◇ Oxide check 4 ﾁｪｯｸ ◇ Check 5 ﾌｫﾄ工程 ○ Photo lithography 6 ﾁｪｯｸ
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USP-10)
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PDF
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QFN-20
Abstract: No abstract text available
Text: 管理計画 QFN-20 CONTROL PLAN (QFN-20) 代表例 XC9516A21AZR-G 工程記号 No. 工程名 Flow Process 1 ｳｴﾊ受入 ◇ Wafer incoming 2 酸化 ○ Oxide 3 酸化膜ﾁｪｯｸ ◇ Oxide check 4 ﾁｪｯｸ ◇ Check 5 ﾌｫﾄ工程 ○ Photo lithography
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QFN-20)
XC9516A21AZR-G
QFN-20
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PDF
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MT25QU512
Abstract: No abstract text available
Text: 512Mb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QU512AB Features Options • Voltage – 1.7–2.0V • Density – 512Mb • Device stacking – Monolithic • Lithography
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512Mb,
MT25QU512AB
512Mb
16-pin
SO16W,
SO16-Wide,
SOIC-16)
24-ball
05/6mm
TBGA24)
MT25QU512
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PDF
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