LO20B
Abstract: lO26 1136 smd ic LP3995 LO31B lo21b LO30B
Text: LP3995 Micropower 150mA CMOS Voltage Regulator with Active Shutdown General Description Key Specifications The LP3995 regulator is designed to meet the requirements of portable wireless battery-powered applications and will provide an accurate output voltage with low noise and low
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LP3995
150mA
LP3995
LO20B
lO26
1136 smd ic
LO31B
lo21b
LO30B
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LO20B
Abstract: LP3995 LP3999 LO21B
Text: LP3995 Micropower 150mA CMOS Voltage Regulator with Active Shutdown General Description Key Specifications The LP3995 linear regulator is designed to meet the requirements of portable battery-powered applications and will provide an accurate output voltage with low noise and low
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LP3995
150mA
LP3995
LO20B
LP3999
LO21B
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CO75
Abstract: CONNECTOR 83734 vibra 16s 8S22L MIL-S-83734
Text: CONTECH RESEARCH, INC. TEST REPORT #92139 QUALIFICATION TESTING MIL-S-83734E PART NUMBER: SEP-12454 SAMTEC CORPORATION 67 MECHANIC STREET AllLEBORO, MASSACHUSETTS 02703 508/226-4800 JUNE 29, 1992 TEST REPORT #92139 QUALIFICATION TESTING MIL-S-83734E PART NUMBER: SEP-12454
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MIL-S-83734E
SEP-12454
CO75
CONNECTOR 83734
vibra 16s
8S22L
MIL-S-83734
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SMD Capacitor symbols
Abstract: LP3995 LO26B LO20B
Text: LP3995 Micropower 150mA CMOS Voltage Regulator with Active Shutdown General Description Key Specifications The LP3995 regulator is designed to meet the requirements of portable wireless battery-powered applications and will provide an accurate output voltage with low noise and low
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LP3995
150mA
LP3995
SMD Capacitor symbols
LO26B
LO20B
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50263
Abstract: LT1H92A lt1119
Text: FRCM 61025 . 02 I l//o:/9~ Ii:Sa 1:/01 . . . l!:l~ . .“ : ‘, , p. . 10/33 .’ ‘ ~o~3 ‘ SIIARP CORPORATION I I TECI{NICAL LITERATURE FOR GaAsP/GaP Yellow chip LED Device HODEL NO, LT1}192A DOC. NO. DG–94XI06 DATE oct. 3101994 1. These technical literature sheets include tho contents under tile copyright of
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94XI06
50263
LT1H92A
lt1119
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Untitled
Abstract: No abstract text available
Text: nixYS MegaMOS FET Module V M O 450-02F VDSS = 200 V ^D25 = 450 A ^DS on typ = 3 .8 IT lfì Conditions VDSS T, = 25°C to 150°C 200 V V dqr Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V VflSM Transient ±30 V lo25 Tc = 25°C 450 A Idso Tc = 80°C
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450-02F
C3-16
C3-17
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KA319
Abstract: KA319D 861c
Text: KA219/KA319 DUAL COMPARATOR DUAL HIGH SPEED VOLTAGE COMPARATOR The KA219 b a dual high speed voltage comparator designed to operate bom a single + SV Supply up to ± 15V dual supplies. Open collector of the output stage makes the KA219compatible wtth RTU, DTL and TTU as well as capable of driving lamps andrelay* at
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KA219/KA319
KA219
KA219compatible
KA319
KA319D
861c
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Untitled
Abstract: No abstract text available
Text: niETEC ALCATEL 4SE D • blSôbSl DDOOlbB fl ■ M T E C MTC-6050 T52 D .C . Motor Controller Data Sheet Preliminary Application Specific Standard Products Features • BIMOS Source/Sink "H -Sw ikh" Driver • 24V / 250m A Outputs • Fast Switching Time • TTL / HCMOS input
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MTC-6050
MTC-6050
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BUK445-500B
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device Is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK445-500B
PINNING-SOT186
BUK445-500B
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REGULATOR IC 7905
Abstract: 11507B REGULATOR IC 7912 circuit diagram 7905 circuit diagram with rectifier 7912 voltage regulator PIN diagram 7905 IC ST 7912 regulator tic 118 ic 7905 voltage regulator 7912 TO3
Text: " “ •■■]■■ b lU ^ y N SENEGAL LINEAR INTEGRATED CIRCUITS SG7900A/SG7900AC SG7900/SG7900C NEGATIVE FIXED VOLTAGE REGULATOR DESCRIPTIO N FEATURES The S G 7 9 0 0A /S G 7 9 00 se rie s o f neg a tive regulators o tte r self-contained, fixedvo ltag e ca pa b ility w ith up to 1,5A of load current. W ith a variety of o utp ut voltages
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SG7900A/SG7900AC
SG7900/SG7900C
SG7900A
900A/SG
MIL-M38510/11501BXA
JAN7905T
MIL-M38510/11505BYA
JAN7905K
MIL-M38510/11506BYA
JAN7912K
REGULATOR IC 7905
11507B
REGULATOR IC 7912 circuit diagram
7905 circuit diagram with rectifier
7912 voltage regulator PIN diagram
7905 IC
ST 7912 regulator
tic 118
ic 7905
voltage regulator 7912 TO3
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lm 3059
Abstract: MC55
Text: IRFSZ14A Advanced Power MOSFET FEATURES BVoss - 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175"t Operating Temperature ■ Lower Leakage Current : 10 m A Max. @ VDS= 60V
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IRFSZ14A
O-220F
100tl)
lm 3059
MC55
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saa 1074
Abstract: No abstract text available
Text: ATV750LV/LVL Features • Low Voltage Programmable Logic Device Wide Power Supply Range - 3.0 V to 5.5 V Ideal for Battery Powered Systems • High Speed Operation 25 ns Max Propagation Delay at Vcc = 3.0 V » Low Power, Three-Volt CMOS Operation ATV750LVL
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ATV750LV/LVL
ATV750LVL
ATV750LV
ATV750LV/LVL
24-pin
saa 1074
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30n20
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance
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T0220AB
BUK7514-55
30n20
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TRANSISTOR b72
Abstract: BUK454-200A BUK454-200B T0220AB
Text: N AUER PHILIPS/DISCRETE b^E D m ^ 5 3 ^ 3 1 GDBDblS 73b • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK454-200A/B
T0220AB
BUK454
-200A
-200B
TRANSISTOR b72
BUK454-200A
BUK454-200B
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BUK627-600A
Abstract: BUK627-600B BUK627-600C
Text: N AMER PHILIPS/ DIS CRETE 2SE D WÊ DOSGbbS T m PowerMOS transistor Fast Recovery Diode FET BUK627-600A BUK627-600B BUK627-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a p[astic envelope. FREDFET with fast recovery
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BUK627-600A
BUK627-600B
BUK627-600C
BUK627
-600A
-600B
-600C
BUK627-600A
BUK627-600B
BUK627-600C
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1N4007 ZENER DIODE
Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
Text: GENERAL PRODUCTS PART No. DEVICE TYPE PACKAGE DESCRIPTION ASY TRIGGER T098 VS1 - 14/18 VOLTS, VS2 - 7/9 VOLTS, SWITCHING CURRENT 80 mA. DIAC DIAC DIAC DIAC DIAC DIAC DIAC D035 D035 D035 D 035 D 035 D035 D035 32 40 34 32 35 40 60 DIODE DIODE DIODE DIODE DIODE
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N5400
1N5401
1N5402
1N4007 ZENER DIODE
diode A14A
diode
st4 diac
diode a15a
zener db3
zener diode 1n4744
diode zener 1n4002
zener diode 5A
zener 400v
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BUK453-60A
Abstract: BUK453-60B T0220AB
Text: PHILIPS INTERNATIONAL bSE D B 711065b □□bL4D3fc. 033 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711065b
BUK453-60A/B
T0220AB
BUK453-60A
BUK453-60B
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BUK436-1000B
Abstract: buk436-1000
Text: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002b
BUK436-1000B
7110fl2fci
buk436-1000
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BUK657-400A
Abstract: BUK657-400B BUK657 T0220AB 40QA
Text: N AMER P H I L I P S / D I S C R E T E 2SE D m ^ 5 3 = 3 3 1 □□ 2 0 7 0 Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK657-400A
BUK657-400B
T-37-/3
BUK657
-40QA
-400B
T0220AB
40QA
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Untitled
Abstract: No abstract text available
Text: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V
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IXTH/IXTM10
IXTH/IXTM12
10N100
12N100
O-247
O-204
O-247
IXTH10N100
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A7805 regulator
Abstract: ic KA7812 a7811 IC. KA7812 to1a transistor TRANSISTOR 2Sc 2525 F 10 KA7810 TRANSISTOR A7805 A7808 ka7805
Text: FIXED VOLTAGE REGULATOR POSITJVE KA78XX/A/I 3-TE R M IN A L t A POSITIVE V O LTA G E R EG ULATO RS The KA78XX series of three-terminal positive regulators are available In the TO-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs Internal current
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KA78XX/A/I
KA78XX
O-220
KA7815
KA7915
A7805 regulator
ic KA7812
a7811
IC. KA7812
to1a transistor
TRANSISTOR 2Sc 2525
F 10 KA7810
TRANSISTOR A7805
A7808
ka7805
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IX 1646
Abstract: 2.t transistor
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP69N03LT, PHB69N03LT, PHD69N03LT QUICK REFERENCE DATA VDSS = 25 V ’Trench’ technology Very low on-state resistance Fast switching
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PHP69N03LT,
PHB69N03LT,
PHD69N03LT
PHP69N03tage.
IX 1646
2.t transistor
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G780
Abstract: 7824 voltage regulator circuit diagram 7824KC diode sg 5 ts 7824 metal pack
Text: SG7800A/SG7800AC SG7800/SG7800C 51LICDN œ n Ër a l L IN E A R IN T E G R A T E D C IR C U IT S POSITIVE FIXED VOLTAGE REGULATOR DESCRIPTION FEATURES The SG7800A/SG7800 series of positive regulators offer self contained, fixedvoltage capability with up to 1.5A of load current and input voltage up to 50V
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51LICDN
SG7800A/SG7800AC
SG7800/SG7800C
SG7800A
SG7800A/SG7800
SG7800A
SG78XXIG/883B
SG78XXIG
G780
7824 voltage regulator circuit diagram
7824KC
diode sg 5 ts
7824 metal pack
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1RL640
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL MOSFET IRL640/IRL641 FEATURES • • • • • • • • Lower R d s ON Excellent voltage stability Fact switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRL640/IRL641
O-22Q
1RL640
IRL641
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