peltier cooler
Abstract: Peltier TO8 16 pin Peltier peltier datasheet TO8 package apd 400- 700 nm
Text: SSO-ADH-230-TO8P APD with Peltier-cooler Specialities: The SSO - AD - 230 - TO8P is a thermoelectrically cooled APD with chip specially selected for low dark current and low "dark count rate". Applications include photon counting and other low light level sensing.
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SSO-ADH-230-TO8P
AD230)
peltier cooler
Peltier
TO8 16 pin Peltier
peltier datasheet
TO8 package
apd 400- 700 nm
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Peltier
Abstract: apd 400- 700 nm peltier cooler peltier datasheet TO8 package
Text: SSO-ADH-1100-TO8P APD with Peltier - Cooler Special characteristics The SSO - AD - 1100 - TO8P is a thermoelectrically cooled APD with chip specially selected for low dark current and low "dark count rate". Applications include photon counting and other low light level sensing.
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SSO-ADH-1100-TO8P
Peltier
apd 400- 700 nm
peltier cooler
peltier datasheet
TO8 package
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FPD3R2
Abstract: photodiode germanium Fujitsu avalanche photodiode avalanche photodiode noise factor
Text: FPD3R2KX/LX Germanium Avalanche Photodiode FEATURES • • • • Low dark current: 0.15|j A High quantum efficiency: 75% at 1,3 jm Low Multiplied dark current: 10pA Storage & operating temperature: -40 to +85°c APPLICATIONS • High bit rate optical transmission system up to 1.0 Gbit.
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps InGaAs APD Module 2.5Gbps InGaAs APD Module Features • • • • • • High Responsivity, facilitates –34 dBm sensitivity High speed, typical 2.5GHz Low dark current Low capacitance, typical 0.35pF Operating temperature range -40°C to 85°C
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850nm,
1310nm,
1550nm,
1550nm
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Untitled
Abstract: No abstract text available
Text: 2.5Gbps InGaAs APD Module 2.5Gbps InGaAs APD Module Features • • • • • • High Responsivity, facilitates –34 dBm sensitivity High speed, typical 2.5GHz Low dark current Low capacitance, typical 0.35pF Operating temperature range -40°C to 85°C
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1310nm,
1550nm,
100cm
9/125um
50/125um
5/125um
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used
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SAP500-Series
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Untitled
Abstract: No abstract text available
Text: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in
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SAP500-Series
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used
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SAP500-Series
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low dark current APD
Abstract: APD-02001 ding APD-02002 APD-02106 APD-02107 APD-02108 APD-02109
Text: GaAs PIN PD Module APD-020XX/APD-021XX Features a. Low Dark Current b. High Reliability Applications a. Digital Fiber Optical Transmission System b. Optical Test and Measurement Absolute Maximum Ratings Parameter Symbol Min. Max. Unit Reverse Voltage
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APD-020XX/APD-021XX
APD-02001
APD-02002
APD-02106
APD-02107
APD-02108
APD-02109
low dark current APD
ding
APD-02002
APD-02106
APD-02107
APD-02108
APD-02109
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used
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SAP500-Series
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low dark current APD
Abstract: avalanche photodiodes J16A
Text: Judson Technologies J16A SERIES GE AVALANCHE PHOTODIODES PB 3305 October 2000 Operating Instructions FEATURES: • 100 MICRON DIAMETER ACTIVE AREA • LOW DARK CURRENT • LOW CAPACITANCE • OFFERS IMPROVED SENSITIVITY OVER PIN DIODES • WIDE BANDWIDTH • RUGGED COAXIAL
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APD 1310nm
Abstract: inGaAs APD-01001 APD-01002 APD-01003 APD-01004 APD-01101 APD-01102 APD-01103 InGaAs pin
Text: InGaAs PIN PD Module APD-010XX/APD-011XX Features a. InGaAs/InP PD b. Aperture Diameter75µm c. Low Dark Current d. High Linearity e. High Reliability Applications a. Simulation Digital Fiber Optical Transmission System b. Optical Test and Measurement
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APD-010XX/APD-011XX
Diameter75
APD-01003
APD-01004
APD-01001
APD-01101
APD-01102
APD-01103
APD 1310nm
inGaAs
APD-01001
APD-01002
APD-01003
APD-01004
APD-01101
APD-01102
APD-01103
InGaAs pin
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nir source
Abstract: No abstract text available
Text: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)
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SSO-AD-230
NIR-TO52-S1
nir source
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nir source
Abstract: No abstract text available
Text: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance
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SSO-AD-230-TO52
nir source
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APD 1300 2,5 GHz
Abstract: JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm
Text: Product Bulletin 10 Gb/s Automatic Gain Control AGC APD Receiver Module ERM 598 The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current
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OC-192/STM-64
APD 1300 2,5 GHz
JDSU avalanche photodiode ingaas ghz
JDSU ERM
ingaas apd photodetector
apd gain control
InGaAs 1550 photodiode transimpedance amplifier
jdsu avalanche photodiode
avalanche photodiode jdsu
photodetector apd dwdm
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avalanche photodiode receiver
Abstract: JDSU ERM InGaAs apd photodiode ingaas apd photodetector avalanche photodiode ghz InGaAs APD, 10 Gb/s, -30 dBm 877-550-JDSU transimpedance amplifier 7.5 GHz 10 gb APD receiver APD 1550 nm photodetector
Text: Product Bulletin ERM 598 10 Gb/s Automatic Gain Control AGC APD Receiver Module The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current
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OC-192/STM-64
avalanche photodiode receiver
JDSU ERM
InGaAs apd photodiode
ingaas apd photodetector
avalanche photodiode ghz
InGaAs APD, 10 Gb/s, -30 dBm
877-550-JDSU
transimpedance amplifier 7.5 GHz
10 gb APD receiver
APD 1550 nm photodetector
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Untitled
Abstract: No abstract text available
Text: PLA-200 & PLA-280: High Sensitivity Large Area APD Components Product Features • 80 or 200 µm InGaAs APD Small form-factor design Low dark current High reliability, epoxy free, hermetic packaging High responsivity in the 0.95-1.65 um wavelength
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PLA-200
PLA-280:
PLA-280,
PLA-200
PLA-080
PLA-200:
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avalanche photodiode noise factor
Abstract: No abstract text available
Text: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR
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SSO-AD-230-TO52i
avalanche photodiode noise factor
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Avalanche photodiode APD
Abstract: No abstract text available
Text: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR
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SSO-AD-230-TO52
Avalanche photodiode APD
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Detectors in communication
Abstract: InGaAs apd photodiode BPX65 high sensitive AAS-100 InGaAs-300L fiber optic detectors Photodiode laser detector BPX-65 ingaas apd photodetector UDT Sensors
Text: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can
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InGaAs-100L
InGaAs-300L.
aAs-300L
aAs-100L
Detectors in communication
InGaAs apd photodiode
BPX65 high sensitive
AAS-100
InGaAs-300L
fiber optic detectors
Photodiode laser detector BPX-65
ingaas apd photodetector
UDT Sensors
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Photodiode laser detector BPX-65
Abstract: BPX65 amplifier UDT Sensors avalanche photodiode bias InGaAs apd photodiode power amplifier optic fiber photodiode BPX65
Text: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can
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7/TO-18
Photodiode laser detector BPX-65
BPX65 amplifier
UDT Sensors
avalanche photodiode bias
InGaAs apd photodiode
power amplifier optic fiber
photodiode BPX65
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mitsubishi APD
Abstract: Photodiode apd "InGaAs APD" InGaAs Photodiode 1550nm apd 2.5 g 1550nm apd 1300nm
Text: • G01Û35T GT b ■ MITSUBISHI OPTICAL DEVICES FU-318AP/FU-318SAP InGaAs APD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FEATURES The FU-318AP/318SAP series avalanche photodiode • Low-dark current (3nA) (APD) modules are designed fo r use in fibe r testing
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FU-318AP/FU-318SAP
FU-318AP/318SAP
1300nm)
FU-318SAP
FU-318AP
00l03t
mitsubishi APD
Photodiode apd
"InGaAs APD"
InGaAs Photodiode 1550nm
apd 2.5 g 1550nm
apd 1300nm
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SSO-AD-500-TO52i
Abstract: No abstract text available
Text: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR
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SSO-AD-500-TO52i
SSO-AD-500-TO52i
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Untitled
Abstract: No abstract text available
Text: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)
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SSO-AD-1100-TO5i
1130m
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