Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES 2003. 1. 15 Revision No : 1 1/2
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KTC3200
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2SC2240
Abstract: 2sc2240 toshiba 2sc2240 transistor low noise audio amplifier
Text: 2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of
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2SC2240
2SC2240
2sc2240 toshiba
2sc2240 transistor
low noise audio amplifier
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2sc2240 equivalent
Abstract: 2SC2240
Text: 2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of
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2SC2240
2SC2240
2sc2240 equivalent
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2SC2240
Abstract: transistor 2sc2240 2Sc2240 transistor 2sc2240 equivalent 2sc2240 toshiba lowest noise audio NPN
Text: 2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of
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2SC2240
2SC2240
transistor 2sc2240
2Sc2240 transistor
2sc2240 equivalent
2sc2240 toshiba
lowest noise audio NPN
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NTE26
Abstract: No abstract text available
Text: NTE26 Silicon NPN Transistor Low Noise Audio Amplifier Features: D VCEO = 120V Min D Low Noise: = 1dB (Typ), 10dB (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
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NTE26
NTE26
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BCY79
Abstract: BCY59
Text: BCY79 LOW NOISE AUDIO AMPLIFIER DESCRIPTION The BCY79 is a silicon Planar Epitaxial PNP transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The NPN complementary type is BCY59. c
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BCY79
BCY79
BCY59.
BCY59
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS LTD. KTC3200 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION Package: TO-92 FEATURES * The KTC3200 is a transistor for low frequency and low noise applications. This device is designed to lower noise
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KTC3200
KTC3200
100uA
10kHz
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KTC3200
Abstract: lowest noise audio NPN transistor ktc3200 KTc3200 BL lowest noise audio NPN transistor rg 625 TRANSISTOR BL 100 KTA1268
Text: SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B C The KTC3200 is a transistor for low frequency and low noise applications. A This device is designed to ower noise figure in the region of low signal
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KTC3200
KTC3200
270Hz
lowest noise audio NPN
transistor ktc3200
KTc3200 BL
lowest noise audio NPN transistor
rg 625
TRANSISTOR BL 100
KTA1268
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bfy76
Abstract: No abstract text available
Text: BFY76 LOW-LEVEL, LOW-NOISE AMPLIFIER DESCRIPTION The BFY76 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for use in high performance, low-level, low-noise amplifier circuits from audio to high frequencies. TO-18 INTERNAL SCHEMATIC DIAGRAM
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BFY76
BFY76
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KTC3200
Abstract: KTc3200 BL KTA1268 rg 625 transistor ktc3200 BL-350
Text: SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B C The KTC3200 is a transistor for low frequency and low noise applications. A This device is designed to ower noise figure in the region of low signal
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KTC3200
KTC3200
270Hz
KTc3200 BL
KTA1268
rg 625
transistor ktc3200
BL-350
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BCY79
Abstract: BCY59
Text: BCY79 LOW NOISE AUDIO AMPLIFIER DESCRIPTION The BCY79 is a silicon Planar Epitaxial PNP transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The NPN complementary type is BCY59. TO-18
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BCY79
BCY79
BCY59.
BCY59
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2SC3329
Abstract: No abstract text available
Text: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
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2SC3329
2SA1316
2SC3329
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2sc3329
Abstract: 2SA1316
Text: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
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2SC3329
2SA1316
2sc3329
2SA1316
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2SC1815L
Abstract: 2SA1015 2SC1815
Text: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) •
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2SC1815
2SA1015
2SC1815L
2SA1015
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2SC1815 2SA1015
Abstract: 2SC1815 2SC1815L 2SA1015L 2SA1015 2sc1815 transistor
Text: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • Unit: mm High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max)
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2SC1815
2SA1015
2SC1815 2SA1015
2SC1815L
2SA1015L
2SA1015
2sc1815 transistor
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2SC1815L
Abstract: 2SC1815
Text: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • Unit: mm High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max)
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2SC1815
2SA1015
2SC1815L
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KTC3200
Abstract: KTc3200 BL rg 625 KTA1268 kta-1268
Text: SEMICONDUCTOR TECHNICAL DATA KTC3200 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • The KTC3200 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal
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KTC3200
KTC3200
100//A,
100juA,
KTA1268.
KTc3200 BL
rg 625
KTA1268
kta-1268
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C 2458
Abstract: 2SA1048 2SC2458 transistor 2SC2458
Text: TO SH IBA 2SC2458 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458© Unit in mm AUDIO AMPLIFIER APPLICATIONS LOW NOISE AUDIO AMPLIFIER APPLICATIONS 4.2MAX. High Current Capability : Iç; = 150mA (Max.) High DC Current Gain : 1ife = 70~700
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2SC2458Â
150mA
2SA1048Â
-55truments,
C 2458
2SA1048
2SC2458
transistor 2SC2458
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transistor C 2240 BL
Abstract: 2SC2240 2240 BL BL2010
Text: TO SH IBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • Unit in mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the
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2SC2240
2SC2240
transistor C 2240 BL
2240 BL
BL2010
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KTA1267L
Abstract: KTC3199L hFE transistor 200
Text: SEMICONDUCTOR TECHNICAL DATA KTC3199L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent h FE Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.).
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KTC3199L
KTA1267L.
T0-92M
100mA,
100Hz,
KTA1267L
KTC3199L
hFE transistor 200
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E3510
Abstract: N248 30MHZ PN2483 PN2484
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES A P PLICA TIO N S • High Breakdown Voltage BV^-gQ . . . 60V • Low Level,'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB
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PN2483,
PN2484
O-92A
N2484
50J/A,
30MHZ
BOXt9477
E3510
N248
PN2483
PN2484
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse
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2SC2240
2SC2240
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Untitled
Abstract: No abstract text available
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-^q . . . 6 0 V • Low Level, 'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A MECHANICAL OUTLINE TO-92A ■ Audio Through High Frequency Ranges
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PN2483,
PN2484
O-92A
N2484
BOXt9477
8-e98EM
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transistor ktc3200
Abstract: rg 625 KTc3200 BL KTC3200
Text: SEMICONDUCTOR T E C H N IC A L D A T A KOREA ELECTRONICS CO.,LTD. KTC3200 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • The KTC3200 is a transistor for low frequency and low noise applications. This device is designed to
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KTC3200
KTC3200
100//A,
100juA,
transistor ktc3200
rg 625
KTc3200 BL
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