NTE313
Abstract: No abstract text available
Text: NTE313 Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.
|
Original
|
NTE313
200MHz
NTE313
|
PDF
|
NTE2643
Abstract: No abstract text available
Text: NTE2643 Silicon NPN Transistor, VHF/UHF Low Noise Amp Surface Mount Features: D Low Noise Figure, High Gain D NF = 1.1dB, |S21e|2 = 13dB (f = 1GHz) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
|
Original
|
NTE2643
500MHz
NTE2643
|
PDF
|
NTE15
Abstract: No abstract text available
Text: NTE15 Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC Features: D High Transition Frequency: fT = 1.1GHz D Low Base Resistance and High Gain D Excellent Noise Characteristics Applications: D VHF Mixers and Oscillators D UHF Oscillators Absolute Maximum Ratings: TA = +25°C unless otherwise specified
|
Original
|
NTE15
NTE15
|
PDF
|
2SC5227
Abstract: EN5034 IC marking jw marking S221 JB1 MARKING
Text: Ordering number:EN5034 N”5034 2SC5227 ¡I NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatures • Low noise : NF = 1.0dB typ f= 1GHz . - High gain: | S21e I 2= 12dB typ (f= 1GHz). • High cutoff frequency : fx=7GHztyp.
|
OCR Scan
|
EN5034
2SC5227
10VfIE;
IS12I
IC marking jw
marking S221
JB1 MARKING
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EC3H07B NPN Epitaxial Planar Type Silicon Transistor For VHF band low-noise Amp and Oscillation Preliminary specifications TENTATIVE Features and applications • Low noise : NF=1.5dB typ f=2GHz • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V)
|
Original
|
EC3H07B
10GHz
000214TM2fXHD
|
PDF
|
2SC4864
Abstract: sanyo lc 15011 ZS22 ic 3586
Text: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)
|
OCR Scan
|
2SC4864
sanyo lc 15011
ZS22
ic 3586
|
PDF
|
NTE23
Abstract: No abstract text available
Text: NTE23 Silicon NPN Transistor Ultra High Frequency Amp Description: The NTE23 is suitable for a low noise amplifier in the VHF to UHF band. Features: D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz D High Power Gain: Gpe 15dB Typ. @ f = 500MHz D High Cutoff Frequency: fT = 2.0GHz Typ
|
Original
|
NTE23
NTE23
500MHz
|
PDF
|
2SC4931
Abstract: ha 0451 55 ic 4553 markingB1 CQ 527
Text: O rdering num ber: EN5295A N°5295A II 2SC4931 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = 1.2dB typ f= 1GHz . • High gain : I S21e I 2= 13dB typ (f= 1GHz). • High cutoff frequency : fx = 9.0GHz typ.
|
OCR Scan
|
EN5295A
2SC4931
13dBtyp
2SC4931-applied
ha 0451 55
ic 4553
markingB1
CQ 527
|
PDF
|
MARKING AJ5
Abstract: 2SC4867 ZS22
Text: Ordering number: E N 4656 No.4856 i II 2SC4867 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatures • Low noise : NF = 1.2dB typ f= 1GHz . • High gain: I S21e I 2= 13dB typ (f=lGHz). • High cutoff frequency : fr = 9.0GHz typ.
|
OCR Scan
|
EN4856
2SC4867
MARKING AJ5
2SC4867
ZS22
|
PDF
|
JR 3610
Abstract: transistor cq 529 MARKING C7 2SC5231 ci 4073
Text: O rd e rin g n u m b e r: EN 5036A NO.5036A SAXYO i _2SC5231 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatures • Low noise : N F= l.OdB typ f= 1GHz . •High gain: I S21e I 2= 12dB typ (f= lGIIz).
|
OCR Scan
|
2SC5231
2SC5231-applied
JR 3610
transistor cq 529
MARKING C7
ci 4073
|
PDF
|
transistor 5633
Abstract: 2SC5230 ZS21 TA-0242 S211-S S211S
Text: Ordering number : EN 5046 No.5046 SAXYO i 2SC5230 II NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications F eatu res • Low noise : NF = l.OdB typ f= 1GHz . •High gain: I S21e I 2= 10.5dB typ (f= 1GHz). • High cutoff frequency : fx = 6.5GHz typ.
|
OCR Scan
|
2SC5230
transistor 5633
ZS21
TA-0242
S211-S
S211S
|
PDF
|
c 4977 transistor
Abstract: TRANSISTOR C 5706 CQ 734 2SC4868 5P J TRANSISTOR MARKING use of ic 4094 transistor on 4977
Text: O rdering n u m b e r:EN5043 N°-5043 II 2SC4868 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-noise Amp Applications Features • Low noise : NF = 1.2dB typ f= IGIiz . •High gain: I S21e I 2= 13dB typ (f= 1GHz). •High cutoff frequency : f? = 9.0GHz typ.
|
OCR Scan
|
EN5043
2SC4868
c 4977 transistor
TRANSISTOR C 5706
CQ 734
2SC4868
5P J TRANSISTOR MARKING
use of ic 4094
transistor on 4977
|
PDF
|
57GHz
Abstract: Transistor KU 607 9484 transistor 2SC5228 marking 9365
Text: Ordering number: EN 5035 No.5035 ¡I 2SC5228 NPN Epitaxial Planar Silicon Transistor i VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu re s •Low noise : NF = l.OdB typ f= 1GHz . • High gain : I S21e I 2= 13.5dB typ (f = 1GHz). • High cutoff frequency : fr = 7GHz typ.
|
OCR Scan
|
2SC5228
57GHz
Transistor KU 607
9484 transistor
marking 9365
|
PDF
|
J31C
Abstract: transistor 9ct 2SC4865 ZS22 IC A 2388 ic 4072 npn 9ct
Text: Ordering number: EN4760 No.4760 i II_2SC4865 NPN Epitaxial Planar Silicon Transistor SAXYO i VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu re s • Lownoise : NF = l.ld B typ f=lGH z . •H igh gain: 1 S21e I 2= 12.5dB typ (f=lGHz).
|
OCR Scan
|
EN4760
2SC4865
J31C
transistor 9ct
ZS22
IC A 2388
ic 4072
npn 9ct
|
PDF
|
|
|
2SK543
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP SSE D 7*n7Q7b OOObTSO 2SK543 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)
|
OCR Scan
|
2SK543
1791C
100MHz)
035pF
100uA
2SK543
|
PDF
|
2SK543
Abstract: transistor fet 2062
Text: SANYO SEMICONDUCTOR 2SK543 CORP SSE D 7*n7Q7b OOObTSO 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)
|
OCR Scan
|
2SK543
1791C
100MHz)
035pF
2SK543
transistor fet 2062
|
PDF
|
MT3S111P
Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287
|
Original
|
2SC941TM
2SC3136
TIM7179-45SL
TIM7179-60SL
TIM7785-4SL
TIM7785-4UL
TIM7785-6UL
TIM7785-8SL
TIM7785-8UL
TIM7785-12UL
MT3S111P
2SC3136
2SC4250FV
TIM0910-8
TA4029CTC
tim8996-30
TA4029
TMD1925-3
2SC5066
3SK293
|
PDF
|
MT4S300T
Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors
|
Original
|
2010/9SCE0004K
2SC1923
MT4S300T
TGI0910-50
MT3S111P
2SC3136
S8850AF
TA4032FT
MT4S300U
VHF-UHF Band oscillator
2sc5108
MT4S301T
|
PDF
|
ECG18
Abstract: 2T202 ECG10 # Frequency at which common emitter current gain is 70.0 of low frequency gain T17 amp ECG29 # Frequency at which common emitter current gain is 70.0 of low frequency gain 1-50 T28A ecg32
Text: Transistors Bi-Polar Types Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts b v C bo Description and Application ECG Type C o lle c to r T o E m itter V o lts B a s e to E m itter V o lts BVc e o b v ebo Max. Collector Current
|
OCR Scan
|
ECG10
ECG11
ECG12
ECG11)
ECG13
T20-3
ECG14
ECG31
ECG32)
O-92M
ECG18
2T202
# Frequency at which common emitter current gain is 70.0 of low frequency gain
T17 amp
ECG29
# Frequency at which common emitter current gain is 70.0 of low frequency gain 1-50
T28A
ecg32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application Case Style Dlag. No. Voltage Gate to Source Min (Volta) Cutoff Voltage Gate to Source Max(OFF) (Volta) BV q s s Drain Current Zero-Gate Min-Max (mA) Drain Current
|
OCR Scan
|
250pA
|
PDF
|
300 Amp mosfet
Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH
|
OCR Scan
|
400MHz
T0106
200MHz
18Typ
250pA
tiMaias11!
300 Amp mosfet
mosfet 400 amp
MOSFET FOR 100khz SWITCHING APPLICATIONS
50 Amp Mosfet
dual jfet vhf
jfet 133
jfet transistor
mosfet amp
DUAL JFET Pch
low voltage mosfet switch 3 amp
|
PDF
|
transistor t18 FET
Abstract: fet preamp mp sot 23 resistor 47k ECG2363 ECG2371 ECG2406 ECG2366 PNP UHF transistor ECG2364
Text: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts bvcbo Collector To Emitter Volts b v Ceo Base to Emitter Volts bvebo M ax. Collector Current Iç Amps Max. Device Dlss. PD
|
OCR Scan
|
ECG2363
ECG2364)
O-92M
ECG2364
ECG2363)
ECG2306
T48-2
ECG2366
ECG399)
transistor t18 FET
fet preamp
mp sot 23
resistor 47k
ECG2371
ECG2406
PNP UHF transistor
|
PDF
|
resistor 22k
Abstract: mp sot 23 resistor 10k RF Transistors sot-23 ECG2406 resistor 47k resistor 2.2k ECG2426 ECG2401 ECG2402
Text: PHILIPS E C G INC SME D Transistors cont'd ECG Type Description and Application • bbS3T2fl OOD Vlbl ITS H E C 6 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b O b v Ceo
|
OCR Scan
|
ECG2401
OT-23
T20-4
ECG2402
ECG2403)
ECG2403
ECG2402)
resistor 22k
mp sot 23
resistor 10k
RF Transistors sot-23
ECG2406
resistor 47k
resistor 2.2k
ECG2426
|
PDF
|
ECG2406
Abstract: ECG399 resistor 47k mp sot 23 ECG2364 ECG2368 resistor 4.7k SP SOT23 ECG2363 ECG2366
Text: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Basa Volts bvcbo Collector To Emitter Volts bv C eo Basa to Emitter Volts Max. Collector Current I j Amps b v eb o Max. Device Diss. PD
|
OCR Scan
|
ECG2363
ECG2364)
O-92M
ECG2364
ECG2363)
ECG2386
T48-2
ECG2366
ECG399)
ECG2406
ECG399
resistor 47k
mp sot 23
ECG2368
resistor 4.7k
SP SOT23
|
PDF
|
