LOW SATURATION PNP 40W TRANSISTOR Search Results

LOW SATURATION PNP 40W TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini

LOW SATURATION PNP 40W TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
darlington power pack Abstract: low saturation pnp 40w transistor 2SB1253 2SD1893 equivalent 2SD1893 Text: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm ● ● 0.7 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V	Original	2SB1253 2SD1893 darlington power pack low saturation pnp 40w transistor 2SB1253 2SD1893 equivalent 2SD1893	PDF
C2320 Abstract: BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324 Text: BC 817W,BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W PNP Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W	Original	17-16W 17-25W 17-40W 18-16W 18-25W 18-40W Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 C2320 BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324	PDF
5Cs transistor Abstract: BC 170 transistor TRANSISTOR BC 807w Q62702-C2328 Text: PNP Silicon AF Transistor ● ● ● ● ● BC 807W BC 808W For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W NPN 2 3 1 Type BC 807-16W BC 807-25W BC 807-40W	Original	07-16W 07-25W 07-40W 08-16W 08-25W 08-40W Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 5Cs transistor BC 170 transistor TRANSISTOR BC 807w	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 0.7 15.0±0.3 11.0±0.2 ● ● ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V	Original	2SB1253 2SD1893	PDF
2SA794 Abstract: 2SC156 2sc1567 low saturation pnp 40w transistor 2SA794A Text: Inchange Semiconductor Product Specification 2SA794 2SA794A Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1567/1567A ·High collector-emitter voltage VCEO APPLICATIONS ·For low frequency output driver ·Optimum for the driver stage of low	Original	2SA794 2SA794A O-126 2SC1567/1567A 2SA794 -500mA -50mA 2SC156 2sc1567 low saturation pnp 40w transistor 2SA794A	PDF
2SA794 Abstract: 2sc1567 2SA794A Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION •With TO-126 package ·Complement to type 2SC1567/1567A ·High collector-emitter voltage VCEO APPLICATIONS ·For low frequency output driver ·Optimum for the driver stage of low	Original	2SA794 2SA794A O-126 2SC1567/1567A 2SA794 -500mA -50mA 2sc1567 2SA794A	PDF
2SA794 Abstract: 2sc1567 2SA794A Text: JMnic Product Specification 2SA794 2SA794A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1567/1567A ・High collector-emitter voltage VCEO APPLICATIONS ・For low frequency output driver ・Optimum for the driver stage of low	Original	2SA794 2SA794A O-126 2SC1567/1567A 2SA794 -0A794A -500mA 2sc1567 2SA794A	PDF
50V 1A power transistor Abstract: 2SB993 2SD1363 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB993 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Collector Power Dissipation: PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max)@ IC= -4A	Original	2SB993 2SD1363 50V 1A power transistor 2SB993 2SD1363	PDF
2SA794 Abstract: 2SA794A Text: AOK AOK Semiconductor Product Specification 2SA794 2SA794A S ilicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC1567/1567A • High collector-emitter voltage V Ceo APPLICATIONS • For low frequency output driver • Optimum for the driver stage of low	OCR Scan	2SA794 2SA794A O-126 2SC1567/1567A 2SA794A -500mA -50mA	PDF
2SB992 Abstract: 2SD1362 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB992 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Collector Power Dissipation: PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ IC= -4A	Original	2SB992 2SD1362 -100V 2SB992 2SD1362	PDF
2SA1939 Abstract: 2SC5196 2SC519 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 APPLICATIONS ·Power amplifier applications	Original	2SA1939 2SC5196 2SA1939 2SC5196 2SC519	PDF
2SA1263 Abstract: 2SA1263 equivalent transistor 2sC3180 2SC3180 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1263 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC3180 APPLICATIONS ·Power amplifier applications	Original	2SA1263 2SC3180 2SA1263 2SA1263 equivalent transistor 2sC3180 2SC3180	PDF
Untitled Abstract: No abstract text available Text: , Una. J TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1263 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VCE(sa.r -2.0V(Min) @lc= -5A • Good Linearity of hFE	Original	2SA1263 2SC3180 -50mA;	PDF
NTE291 Abstract: NTE292 NTE292MCP Text: NTE291 NPN & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are	Original	NTE291 NTE292 50kHz NTE291 NTE292 NTE292MCP	PDF

Untitled Abstract: No abstract text available Text: ROHM CO LT D 40E D B T ô a û T ïT 0D0Sfc.03 K ÿ > y X £ /Transistors 1 BIR HM 2SB1291 7 -3 3 -/7 1 1 ° £ * V 7 ^ 7 ° U - * pNP y 'J □ > N7 > y * ^ '®:üM®^JiHllIlÆ /L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 2 • ÿ fffÎ^ jÈ lS /D im e n sio n s Unit: mm	OCR Scan	2SB1291 2SD1720	PDF
PNP Monolithic Transistor Pair Abstract: NTE253MCP DSA0013913 SILICON COMPLEMENTARY transistors darlington Text: NTE253 NPN & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.	Original	NTE253 NTE254 NTE253MCP PNP Monolithic Transistor Pair DSA0013913 SILICON COMPLEMENTARY transistors darlington	PDF
2SA1284 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA1284 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1284 is a silicon PNP epitaxial type transistor designed for high OUTLINE DRAWING Uni' * 5 .1 MAX voltage application.	OCR Scan	2SA1284 2SA1284 2SC3244. -100V -800mA 130MHz 900mW	PDF
2SB1291 Abstract: 2SD1720 Text: 2SB1291 h "7 > v 7s $ /T ra n s is to rs X tf 2SB1291 PNP > V =l > S ? > y X 2 Epitaxial Planar PNP Silicon Transistor fiJi;& li^ i# fii# i/ L o w Freq. Power Amp. ^•Jfí'+iíISl/Dimensions Unit: mm 1) VcE(sat) A 'lf t l'o V c E (s a t\|= —0.3V (Typ.)	OCR Scan	2SB1291 2SB1291 2SD1720	PDF
HB857 Abstract: 50V 1A PNP power transistor Text: PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HB857 █ APPLICATIONS LOW FREQUENCY POWER AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃	Original	HB857 O-220 -50mA, -10AIC HB857 50V 1A PNP power transistor	PDF
2SB1293 Abstract: 2SD1896 Text: h "7 > V ^ / T ransistors 2SB1293 2SB1293 x tf £ * y y JV7° U - 1M PNP y 1J □ > h ÿ > y 7 $ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor U V; v gi T • W f2^t>£El/D im ensions Unit: mm • ¡» fi 1) VcE(sat) Siï V cE (sa t)= —0.3V (T y p .) Ic / I b = —	OCR Scan	2SB1293 2SD1896 2SB1293 2SD1896	PDF
Untitled Abstract: No abstract text available Text: ROHM CO LTD 40E D 7 0 2 0 ^ QOOSfc.12 h 7 > v X $ / T ransistors T E3RHM 2SB1294 7=3 Z-i 9 I f c f £ * y 7 J l 7 l s - + M PNP y U □ > N ÿ > v 2 S B 1 2 i Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor T fJ iE l/D im e n s io n s Unit: mm 1) VcE(sat)	OCR Scan	2SB1294 2SD1897	PDF
2SC4793 2sa1837 Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303 Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688	Original	2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303	PDF
ISA1284AS1 Abstract: ISC3244AS1 Text: 〈SMALL-SIGNAL TRANSISTOR〉 ISA1284AS1 PRELIMINARY FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Notice: This is not a final specification Some parametric are subject to change. DESCRIPTION OUTLINE DRAWING Unit：ｍｍ ISA1284AS1 is a silicon PNP epitaxial type transistor	Original	ISA1284AS1 ISA1284AS1 ISC3244AS1. 130MHz -800mA -100V 600mW ISC3244AS1	PDF
2SB1531 Abstract: 2SD2340 1305s Text: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000	Original	2SB1531 2SD2340 2SB1531 2SD2340 1305s	PDF

LOW SATURATION PNP 40W TRANSISTOR Search Results

LOW SATURATION PNP 40W TRANSISTOR Result Highlights (5)

LOW SATURATION PNP 40W TRANSISTOR Datasheets Context Search

darlington power pack

C2320

5Cs transistor

Untitled

2SA794

2SA794

2SA794

50V 1A power transistor

2SA794

2SB992

2SA1939

2SA1263

Untitled

NTE291

Untitled

PNP Monolithic Transistor Pair

2SA1284

2SB1291

HB857

2SB1293

Untitled

2SC4793 2sa1837

ISA1284AS1

2SB1531