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    LPTS Search Results

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    LPTS Price and Stock

    Sensopart 527-51136---LPT-S5

    SPARE GLASS V 10/V20, WELDING SP
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    DigiKey 527-51136---LPT-S5 1
    • 1 $110
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    Pyle Audio PLPTS2

    Universal Laptop Stand, Adjustable, Mini; Product Range:- Rohs Compliant: Na |Pyle PLPTS2
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    Newark PLPTS2 Bulk 1
    • 1 $26
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    Pyle Audio PLPTS25

    Laptop Stand |Pyle PLPTS25
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    Newark PLPTS25 Bulk 10
    • 1 $15
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    Dataman LP-TSOP-48S

    |Dataman LP-TSOP-48S
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    Newark LP-TSOP-48S Bulk 1
    • 1 $265
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    Dataman LP-TSOP-28PIN

    |Dataman LP-TSOP-28PIN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark LP-TSOP-28PIN Bulk 1
    • 1 $185
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    LPTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4148

    Abstract: 5102ALPRP lpt port 1N4148 SPACE POWER ELECTRONICS INC
    Text: SPACE ELECTRONICS INC. 16-BIT, 20 KHZ A/D CONVERTER SPACE PRODUCTS +VDIG 1 5102ALPRP 44 +VANLOG DGND AGND -VDIG -VANLOG -VDIG SLEEP RST SLEEP HOLD BP/UP CODE TRK1 SSH/SDL CRS/FIN TRK2 SDATA SCKMOD CLKIN LPTSTATUS XOUT +VANLOG STBY AIN2 CLKIN DGND -VANLOG XOUT


    Original     		PDF 16-BIT, 5102ALPRP 16-Bit 00Rev2 1N4148 5102ALPRP lpt port 1N4148 SPACE POWER ELECTRONICS INC

    rsj-300

    Abstract: rsj-300n10
    Text: Data Sheet 4V Drive Nch MOSFET RSJ300N10  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3)  Application


    Original     		PDF RSJ300N10 RSJ300N10 Pw10s, R1120A rsj-300 rsj-300n10

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		PDF R5019ANJ R5019ANJ R1120A

    rcj450

    Abstract: rcj450N20
    Text: RCJ450N20 Data Sheet 10V Drive Nch MOSFET RCJ450N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		PDF RCJ450N20 RCJ450N20 Pw10st R1120A rcj450

    rcj330

    Abstract: RL76 RCJ330N25
    Text: RCJ330N25 Data Sheet 10V Drive Nch MOSFET RCJ330N25  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 4.5 13.1 9.0 1.3 1.24 2.54 0.78 2.7 5.08 (1) (2) 0.4 1.2 3.0 1.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage


    Original     		PDF RCJ330N25 R1120A rcj330 RL76 RCJ330N25

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6012ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6012ANJ R0039A

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R5016ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) Base (Gate) (1) (2) 1.2 3.0 1.0 1.24 2.54 (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions


    Original     		PDF R5016ANJ

    Untitled

    Abstract: No abstract text available
    Text: R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R5021ANJ SC-83) R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6008FNJ SC-83) R1120A

    R5021ANJ

    Abstract: No abstract text available
    Text: R5021ANJ R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R5021ANJ SC-83) R1120A R5021ANJ

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch MOSFET RSJ10HN06  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) High power Package 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2


    Original     		PDF RSJ10HN06 R1120A

    LPT 26 pin to 39

    Abstract: 9240LP adc lpt
    Text: 9240LP 14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC BIT 2 BIT 1 OTC NC NC AVDD AVSS NC SENSE Vref REFCOM BIT 3 NC BIAS CAPB CAPT NC CML LPTref 9240LP BIT 10 BIT 11 BIT 12 BIT 13 NC BIT 14 LPTSTATUS LPTBIT DRVDD CLK Memory AVDD NC . DVSS AVSS DVDD


    Original     		PDF 9240LP 14-Bit, Signal-to-noise02 10MSPS LPT 26 pin to 39 9240LP adc lpt

    Untitled

    Abstract: No abstract text available
    Text: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)


    Original     		PDF R5016ANJ

    lpts

    Abstract: No abstract text available
    Text: RSJ151P10 Datasheet Pch 100V 15A Power MOSFET lOutline VDSS -100V RDS on (Max.) 120mW ID -15A PD 50W lFeatures LPTS (SC-83) (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		PDF RSJ151P10 -100V 120mW SC-83) R1102A lpts

    C458C

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R5011ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R5011ANJ R0039A C458C

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R5009ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 2.54 (1) Base (Gate) (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions


    Original     		PDF R5009ANJ

    RSJ151P10

    Abstract: No abstract text available
    Text: RSJ151P10 Pch 100V 15A Power MOSFET Datasheet lOutline VDSS -100V RDS on (Max.) 120mW ID -15A PD 50W lFeatures (2) LPTS (SC-83) (1) (3) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Source (3) Drain 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		PDF RSJ151P10 -100V 120mW SC-83) R1120A RSJ151P10

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET RSJ450N04  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High current 3) High power Package 4.5 3.0 1.0 1.24 0.4 0.78 2.7 5.08 (1) (2) 1.2 2.54 (3)


    Original     		PDF RSJ450N04 R1120A

    Untitled

    Abstract: No abstract text available
    Text: R5019ANJ Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		PDF R5019ANJ R5019ANJ R1120A

    Untitled

    Abstract: No abstract text available
    Text: R5013ANJ Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.38W ID 13A PD 100W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R5013ANJ SC-83) R1120A

    RSJ250P

    Abstract: RSJ250P10 rsj250
    Text: Data Sheet 4V Drive Pch MOSFET RSJ250P10  Structure Silicon P-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3)  Application


    Original     		PDF RSJ250P10 RSJ250P10 PW10s, R1120A RSJ250P rsj250

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R5021ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) garanteed to be ±30V . 4.5 3.0 1.0 1.24


    Original     		PDF R5021ANJ R5021ANJ R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R5005CNJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		PDF R5005CNJ R5005CNJ R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch MOSFET RSJ550N10  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High Power Package. 3) 4V drive. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3)


    Original     		PDF RSJ550N10 R1120A