smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 25 June 2013 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
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BLF8G20LS-400PV;
BLF8G20LS-400PGV
BLF8G20LS-400PV
LS-400PGV
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
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BLF8G20LS-400PV;
BLF8G20LS-400PGV
BLF8G20LS-400PV
LS-400PGV
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Untitled
Abstract: No abstract text available
Text: RHFL4913A Rad-hard adjustable positive voltage regulator Datasheet - production data Description The RHFL4913A is a high-performance adjustable positive voltage regulator, able to provide 2 A of maximum current in FLAT-16 package 3 A in the SMD5C package from an
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RHFL4913A
RHFL4913A
FLAT-16
FLAT-16
DocID10005
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2SD814
Abstract: 2SD814A marking LQ
Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD814,2SD814A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low noise voltage NV 1 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1
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2SD814
2SD814A
OT-23
2SD814
2SD814A
marking LQ
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RHFL4913A
Abstract: No abstract text available
Text: RHFL4913A Rad-hard adjustable positive voltage regulator Datasheet - production data provide 2 A of maximum current in FLAT-16 package 3 A in the SMD5C package from an input voltage ranging from 3 V to 12 V, with a typical dropout voltage of 350 mV. )/$7
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RHFL4913A
FLAT-16
RHFL4913A
FLAT-16
5962F02524.
DocID10005
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amd elan 520
Abstract: smd transistor 857 data transistor SMD p12 EC2500ETT-8 u47 K SMD SOT23 transistor MARK Y2 ISL-8032VT PALCE22V10H-5JC ISL-8032
Text: Élan SC520 Microcontroller Customer Development Platform User’s Manual Order #22450A Élan™SC520 Microcontroller Customer Development Platform User’s Manual Copyright 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. "AMD" products. AMD
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lanTMSC520
2450A
lanSC520
amd elan 520
smd transistor 857 data
transistor SMD p12
EC2500ETT-8
u47 K
SMD SOT23 transistor MARK Y2
ISL-8032VT
PALCE22V10H-5JC
ISL-8032
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Untitled
Abstract: No abstract text available
Text: BLP8G21S-160PV Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test
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BLP8G21S-160PV
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Abstract: No abstract text available
Text: BLP8G21S-160PV Power LDMOS transistor Rev. 2 — 19 December 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test
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BLP8G21S-160PV
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Abstract: No abstract text available
Text: BLF8G20LS-220 Power LDMOS transistor Rev. 1 — 7 March 2013 Objective data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF8G20LS-220
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transistor TO-220 Outline Dimensions
Abstract: No abstract text available
Text: BLF8G20LS-220 Power LDMOS transistor Rev. 2 — 30 May 2013 Product data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF8G20LS-220
transistor TO-220 Outline Dimensions
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transistor SMD g 28
Abstract: No abstract text available
Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
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BLF8G20LS-400PV;
BLF8G20LS-400PGV
BLF8G20LS-400PV
LS-400PGV
transistor SMD g 28
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Untitled
Abstract: No abstract text available
Text: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n
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07N20
67040-S
112-A
S35bQ5
SQT-89
B535bQ5
D13377Ã
B235bG5
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-230V Power LDMOS transistor Rev. 1 — 7 November 2013 Preliminary data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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BLF8G20LS-230V
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smd transistor bq
Abstract: smd transistor H F BQ 20 smd transistor buk202-50y
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK202-50Y QUICK REFERENCE DATA SYMBOL PARAMETER •l Nominal load current ISO SYMBOL PARAMETER APPLICATIONS Continuous off-state supply voltage Continuous load current Continuous junction temperature
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BUK202-50Y
BUK206-50Y
smd transistor bq
smd transistor H F
BQ 20 smd transistor
buk202-50y
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K204 transistor
Abstract: uk2045 smd resistor 1c0 transistor yp1 lq smd transistor
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK200-50X DESCRIPTION BUK204-50X QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount
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BUK200-50X
BUK204-50X
K204 transistor
uk2045
smd resistor 1c0
transistor yp1
lq smd transistor
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Untitled
Abstract: No abstract text available
Text: BLF8G22LS-270 Power LDMOS transistor Rev. 2 — 3 December 2012 Preliminary data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
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BLF8G22LS-270
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Abstract: No abstract text available
Text: BLF8G22LS-270 Power LDMOS transistor Rev. 3 — 20 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
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BLF8G22LS-270
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Abstract: No abstract text available
Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.
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BLC8G27LS-160AV
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-230V Power LDMOS transistor Rev. 2 — 21 February 2014 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
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BLF8G20LS-230V
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Abstract: No abstract text available
Text: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 2 — 22 April 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-150V;
BLF8G27LS-150GV
BLF8G27LS-150V
8G27LS-150GV
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 3 — 26 June 2013 Product data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-150V;
BLF8G27LS-150GV
BLF8G27LS-150V
8G27LS-150GV
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Untitled
Abstract: No abstract text available
Text: BLF8G22LS-240 Power LDMOS transistor Rev. 3 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF8G22LS-240
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Untitled
Abstract: No abstract text available
Text: BLF8G22LS-240 Power LDMOS transistor Rev. 2 — 22 January 2013 Preliminary data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
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BLF8G22LS-240
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