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    M12L16161 Search Results

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    M12L16161 Price and Stock

    Elite Semiconductor Memory Technology Inc M12L16161A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics M12L16161A 3
    • 1 -
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    Elite Semiconductor Memory Technology Inc M12L16161A-7TG2K

    SYNCHRONOUS DRAM, 1MX16, 6NS, CMOS, PDSO50
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components M12L16161A-7TG2K 5,121
    • 1 $2.856
    • 10 $2.856
    • 100 $2.856
    • 1000 $1.071
    • 10000 $1.071
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    Elite Memory Technology M12L16161A-6T

    IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC (Also Known As: M12L16161A-6T/HJWQ)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components M12L16161A-6T 3,489
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.7875
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    M12L16161A-6T 3,489
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.7875
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    Others M12L16161A-7T

    IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components M12L16161A-7T 684
    • 1 $2.32
    • 10 $2.32
    • 100 $2.32
    • 1000 $0.957
    • 10000 $0.957
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    ESI M12L16161A-6T

    IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components M12L16161A-6T 4
    • 1 $18.9
    • 10 $14.175
    • 100 $14.175
    • 1000 $14.175
    • 10000 $14.175
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    M12L16161A-6T 4
    • 1 $18.9
    • 10 $14.175
    • 100 $14.175
    • 1000 $14.175
    • 10000 $14.175
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    Find more M12L16161 price and stock on Findchips.com

    M12L16161 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M12L16161A Elite Semiconductor Memory Technology 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A Elite Semiconductor Memory Technology 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A Unknown 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A-10T Elite Semiconductor Memory Technology 512K x 16 Bit x 2 Banks Synchronous DRAM Original PDF
    M12L16161A-4.3T Unknown 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A-5.5T Unknown 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A-5T Elite Semiconductor Memory Technology 512k x 16 Bit x 2 Banks Synchronous DRAM Original PDF
    M12L16161A-5T Unknown 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A-5TG Elite Semiconductor Memory Technology 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A-6T Elite Semiconductor Memory Technology 512k x 16 Bit x 2 Banks Synchronous DRAM Original PDF
    M12L16161A-6T Unknown 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A-7T Elite Semiconductor Memory Technology 512k x 16 Bit x 2 Banks Synchronous DRAM Original PDF
    M12L16161A-7T Unknown 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A-7TG Elite Semiconductor Memory Technology 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF
    M12L16161A-8T Elite Semiconductor Memory Technology 512k x 16 Bit x 2 Banks Synchronous DRAM Original PDF
    M12L16161A-8T Unknown 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF

    M12L16161 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: M12L16161A 2Q SDRAM 512K x 16Bit x 2Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page)


    Original     		M12L16161A 16Bit M12L16161A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision V1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision V1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision V1.2 (Apr. 25 2000)


    Original     		M12L16161A 200MHZ 127mm PDF

    M12L16161A-7TG

    Abstract: M12L16161A M12L16161A-5TG M12L16161
    Text: ESMT M12L16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3


    Original     		M12L16161A 16Bit M12L16161A M12L16161A-7TG M12L16161A-5TG M12L16161 PDF

    M12L16161

    Abstract: m12l16161a-7t
    Text: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision V1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision V1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision V1.2 (Apr. 25 2000)


    Original     		200MHZ 127mm M12L16161 m12l16161a-7t PDF

    esmt m12l16161a

    Abstract: M12L16161A M12L16161A-7TG 200MHZ M12L16161A-5TG
    Text: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension


    Original     		M12L16161A 200MHZ 127mm esmt m12l16161a M12L16161A M12L16161A-7TG 200MHZ M12L16161A-5TG PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M12L16161A 2Q Operation Temperature Condition -40 C~85 C SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs


    Original     		M12L16161A 16Bit M12L16161A PDF

    M12L16161A

    Abstract: esmt m12l16161a M12L16161A-7TIG
    Text: ESMT M12L16161A Operation temperature condition -40℃~85℃ SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs


    Original     		M12L16161A 16Bit M12L16161A esmt m12l16161a M12L16161A-7TIG PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension


    Original     		M12L16161A 200MHZ 127mm PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension


    Original     		200MHZ 127mm PDF

    M12L16161A

    Abstract: M12L16161A-7T M12L16161A-5T M12L16161A-6T M12L16161A-8T
    Text: M12L16161A 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply The M12L16161A is 16,777,216 bits synchroLVTTL compatible with multiplexed address nous high data rate Dynamic RAM organized as


    Original     		M12L16161A 16Bit M12L16161A M12L16161A-7T M12L16161A-5T M12L16161A-6T M12L16161A-8T PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T M12L16161A 2Q Automotive Grade SDRAM 512K x 16Bit x 2Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )


    Original     		M12L16161A 16Bit M12L16161A PDF

    SDRAM

    Abstract: M12L16161A-7TG2Q
    Text: ESMT M12L16161A 2Q SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )


    Original     		M12L16161A 16Bit M12L16161A SDRAM M12L16161A-7TG2Q PDF

    M12L16161A-7TG

    Abstract: M12L16161A M12L16161A-5TG
    Text: ESMT M12L16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3


    Original     		M12L16161A 16Bit M12L16161A M12L16161A-7TG M12L16161A-5TG PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension


    Original     		200MHZ 127mm PDF

    SDRAM

    Abstract: No abstract text available
    Text: ESMT M12L16161A 2Q Automotive Grade SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs


    Original     		M12L16161A 16Bit M12L16161A SDRAM PDF

    M52D16161A

    Abstract: M52D16161A-10BG M52D16161A-10TG cke 2009 amp
    Text: ESMT M52D16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.


    Original     		M52D16161A 16Bit M52D16161A M52D16161A-10BG M52D16161A-10TG cke 2009 amp PDF

    M13S2561616A-5TG

    Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
    Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now


    Original     		256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    0.65mm pitch BGA

    Abstract: M52S16161A M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A
    Text: ESMT M52S16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3


    Original     		M52S16161A 16Bit M52S16161A 0.65mm pitch BGA M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A PDF