CD4019B
Abstract: B4KB a4ka kb-04 15-V
Text: HARRIS SEMICOND SECTOR MME M302571 D HARRIS 0037331 A • HAS - n . / ^ / 3 - 2 C D 4019B Types Features: CMOS Quad AND/OR Select Gate ■ Medium-speed o p e ra tio n . • * * *P H L = *P LH = 60 ns ty p . a t C l = 50 p F , V q q - 1 0 V ■ Standardized, sym m etrical o u tp u t characteristics
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M30S571
QD373Ã
CD4019B
20-Volt
16-lead
M302271
GQ373Ã
B4KB
a4ka
kb-04
15-V
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74hc4075
Abstract: No abstract text available
Text: T -4.vai-O D Technical Data — CD54/74HC4075 CD54/74HCT4075 File Number 1 7 7 8 HARRIS SEMICOND SECTOR 27E D M302571 0017^55 A BiHAS High-Speed CMOS Logic Triple 3-Input OR Gate Type Features: • Buffered inputs ■ Typical CD54/74HC4075 Propagation Delay = 8ns
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CD54/74HC4075
CD54/74HCT4075
M302571
RCA-CD54/74HC4075
CD54/74HCT4075
CD54/74HCT
54LS/74LS
CDS4HC4075
CD54HCT40-
74hc4075
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Untitled
Abstract: No abstract text available
Text: 4bE D HARRIS SEMICOND SECTOR • M302571 □□3^132 fl ■ HAS MWS5114 HARRIS S E M I C O N D U C T O R - 4 < a ~ Z '5 - 0 2 1024-Word x 4-Bit LSI Static RAM February 1992 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4 bit static random access
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M302571
MWS5114
1024-Word
MWS5114
MWS5114-3
MWS5114-2
MWS5114-1
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LA 7652
Abstract: No abstract text available
Text: M302571 DQMMMST TMb I I HAS HARRIS S E M I C O N D U C T O R CD4000BMS, CD4001BMS CD4002BMS, CD4025BMS HARRIS SEMICOND SECTOR SñE J> CMOS NOR Gate December 1992 T 'H Pinouts Features CD4000BMS • High-Voltage Types 20V Rating • Propagation Delay Tim e
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CD4000BMS,
CD4001BMS
CD4002BMS,
CD4025BMS
100nA
CD4000BMS
CD4001BMS
63l-l
CD4002BMS
-I-07
LA 7652
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74HCT541
Abstract: No abstract text available
Text: _ File Number CD54/74HC540, CD54/74HCT540 CD54/74HC541, CD54/74HCT541 1659 57E D HARRIS SEMICOND SECTOR • M302571 GQ17Ô3L □ S3 HAS "P52r0l High-Speed CMOS Logic AO— - "-Y O A 1 -1 ^ -Y 1 IS —Y2 < - 4 TCO a* ¿Ü _Y3 A4- A Já-Y4
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CD54/74HC540,
CD54/74HCT540
CD54/74HC541,
CD54/74HCT541
M302571
P52r0l
CD74HCIHC
54/74HC
54/74HCT
92CS-35I30R3
74HCT541
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TMS 2370
Abstract: HA2-2605-5 HA-2605 HA2602 A 2602 16 pin
Text: blE ]> HARRIS SEMICOND SECTOR æ • M302571 004b537 040 H H A S HA-2600, HA-2602 HA-2605 HARRIS SEMICONDUCTOR Wideband, High Impedance Operational Amplifiers March 1993 Features • • • • • • • • • Description 12MHz Wide Bandwidth.
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M302571
004b537
HA-2600,
HA-2602
HA-2605
HA-2600/2602/2605
HA-2600)
12MHz
TMS 2370
HA2-2605-5
HA-2605
HA2602
A 2602 16 pin
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CD40162
Abstract: CD40163B 74ls163 function table 74ls163 truth table 15-V 74LS160 CD40160B CD40161B CD40162B preset counting meter diagram
Text: HARRIS S E MI C O ND SECTOR 44E ]> 43GE271 0037734 ~ CD 40160B — Decade with Asynchronous Clear CD 40161B — Binary with Asynchronous Clear CD 40162B — Decade with Synchronous Clear CD 40163B — Binary with Synchronous Clear • CD40160B, CD40161B, CD40162B,
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20-Volt
CD40160B
CD40161B
CD40162B
CD40163B
CD40160B,
CD40161B,
CD40162B,
C040162B
CD40162
74ls163 function table
74ls163 truth table
15-V
74LS160
preset counting meter diagram
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p1806
Abstract: CDP1804 str 6565 CDP1804ACD CDP1804A RTA 16065 CDP1804ACE 1802 harris
Text: HARRIS SEfllCOND SECTOR 37E D I 43G2271 Q023Gbb 7 IHAS 1800-Series Microprocessors and Microcomputers . CDP1804AC - iq - o S CMOS 8-Bit Microcomputer With On-Chip RAM, ROM, and Counter/Timer T E R M IN A L A S S IG N M E N T CLOCK — #A lT 2 CLEAR — 3 0 — 4
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43G2271
Q023Gbb
1800-Series
CDP1804AC
92CS-J498
p1806
CDP1804
str 6565
CDP1804ACD
CDP1804A
RTA 16065
CDP1804ACE
1802 harris
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80c85
Abstract: Intel 8155 Port IC intel 8155 5962R9XXXX01QXC
Text: i l i h a r r is HS-81C55RH 81 S E M I C O N D U C T O R Radiation Hardened 256 X 8 CMOS RAM March 1996 Features Description • Devices QM L Qualified in Accordance with MIL-PRF-38535 The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Harris radiation hardened SelfAligned Junction Isolated SAJI silicon gate technology.
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HS-81C55RH
HS-81C55/56RH
HS-80C85RH
500ns
HS-81
C55/56RH
HS-81r
1-800-4-HARRIS
80c85
Intel 8155 Port IC
intel 8155
5962R9XXXX01QXC
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Untitled
Abstract: No abstract text available
Text: H A R R IS æ S E M IC O N D SECTO R bSE D • lHARRlS S E M I C O N D U C T O R 4305571 G D M ^O M l 7 3 e! « H A S 2N7277D, 2N7277R 2N7277H REGISTRATION PENDING Currently Available as FRM234 D, R, H . . Radiation Hardened N-Channel Power MOSFETs ju n « 1993
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2N7277D,
2N7277R
2N7277H
FRM234
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AA
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Untitled
Abstract: No abstract text available
Text: f f ì HI5703 H L A F R R IS S E M I C O N D U C T O R 10-Bit, 40 MSPS A/D Converter August 1996 Features Description • 40 MSPS Sampling Rate The HI5703 is a monolithic, 10-bit, analog-to-digital converter fabricated in Harris’s BiCMOS process. It is designed for high
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HI5703
10-Bit,
HI5703
10MHz
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SO LID STATE 01E O p to electro n ic S p e c ific a tio n s _ 19798 - m HARRIS SEM IC O ND SECTOR 37E D *4302271 0Q272b0 1 - 7 I HAS 1mm Aperture Photon Coupled Interrupter Module H22L1,H22L2| SY M B O lj— M IN . T h e G E Solid S ta te H 2 2 L series is a gallium arsenide, infrared
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0Q272b0
H22L1
H22L2|
S-42662
S-429S1
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Untitled
Abstract: No abstract text available
Text: S HS-26C32RH HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Receiver August 1995 Features • Pinouts 1. 2 Micron Radiation Hardened CMOS HS1-26C32RH 16 LEAD CERAM IC SIDEBRAZE DIP M IL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si
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HS-26C32RH
HS1-26C32RH
IL-STD-1835:
CDIP2-T16
RS-422
138mW
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICÓND SECTOR 3?E 5 ES 43Q2271 OGSblö? 1 M HAS Hlgh-Reliabillty Advanced CMOS Logic ICs_ — - -— —- Recent Additions CD54AC646/3A CD54ACT646/3A T ’ -52.-3>l Octal-Bus Transceiver/Register, 3-State
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43Q2271
CD54AC646/3A
CD54ACT646/3A
CD54AC646
CD54ACT646
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CA3300
Abstract: CA3306 CA3306AE
Text: 43D 2271 G D S lb ä b TbE • H A S C A 3306 GBH " » CMOS Video Speed 6-Bit Flash A/D Converter December 1993 Features Description • CMOS Low Power with Video Speed 70mW Typ. The CA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications demanding both low power
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CA3306
15MHz,
CA3300
CA3306,
CA3306A,
CA3306C
IsMj306A,
CA3306AE
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ha574
Abstract: TE 538
Text: HARRIS SENICOND SECTOR 77 1 43 0 2 2 7 1 ¡ 2 dF | 4302571 □□0ci012 5 | ~ 77C 09012 HARRIS SEMICOND SECTOR H a r r i s H Y - 9 D' 5 T-51-10-12 7 4 in o> ADVANCED Sampling 12 Bit A /D Converter with > 8/16 Bit fjP interface Applications Features • Complete 12 Bit Sampling
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T-51-10-12
48kHz
150ns
HY3-9574J-5
HY3-9574K-5
HY3-9574L-5
HY3-9574A-9
HY3-9574B-9
ha574
TE 538
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR TS H A R F "S ADVANCE INFORMATION dË| 4302271 ‘i | j-46-23- 08 H S -65142R H Radiation Hardened 1024 x 4 CM OS RAM Features • Radiation H ardened E P I-C M O S • Asynchronous Operation • Total D ose.> 5 x 105 Rad Si
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j-46-23-
-65142R
HS-65142RH
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Untitled
Abstract: No abstract text available
Text: f f l H A R R HCS283MS I S S E M I C O N D U C T O R Radiation Hardened 4-Bit Full Adder with Fast Carry O c to b e r 19 9 5 Pinouts Features • 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C 3 Micron Radiation Hardened SOS CMOS
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HCS283MS
MIL-STD-1835
CDIP2-T16,
05A/cm2
10Ojxm
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Untitled
Abstract: No abstract text available
Text: f f i H A R R HC5517 IS S E M I C O N D U C T O R Ringing SLIC Subscriber Line Interface Circuit August 1996 Features Description Thru-SLIC Ringing up to 44Vrm§ into 3 REN at 10% THD with a -80V Battery • Sinusoidal Ringing Capability The HC5517 is a ringing SLIC designed to accommodate a
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HC5517
44VrmÂ
HC5517
1-800-4-HARRIS
ODb74bO
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Untitled
Abstract: No abstract text available
Text: H A RR IS S E M I C O N » S E C T O R m H A R R I 4bE T> 4 3 0 2 2 7 1 □□3'ìGbS ñ M H A S m HM-6518 S S E M I C O N D U C T O R - r - 4 ~ r ô - o s 1 0 2 4 x 1 CM OS RAM February 1992 Description Features • i û The HM-6518 is a 1024 x 1 static CMOS RAM fabricated
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HM-6518
HM-6518
20mW/MHz
180ns
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kjm 038
Abstract: No abstract text available
Text: HARRIS H A SEflICOND R R SECTOR bflE D Bi 4302571 OOSa?^^ I S 5ST • H F H F HAS A 1 1 1 1 2 S E M I C O N D U C T O R A Ultra High-Speed Current Feedback Amplifier March 1993 Features Description • Low D isto rtio n 30M Hz .-66dBc
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-66dBc
850MHz
300V/p*
kjm 038
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Untitled
Abstract: No abstract text available
Text: HARRIS SLflICOND SECTOR 37E D m 4302271 □D213bT M B I H A S 3875081 G E SOLID STATE 01E 13555 _ D ~ T - 5 /-// CD4016A Types CMOS Quad Bilateral Switch • High degree of linearity: <0.5% distortion typ. @ fj$ = 1 k H z ,V is * 5 V p .p.
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D213bT
CD4016A
RCA-CD4016A
14-lead
14-le
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CD4011B
Abstract: CD40238 cd40128 z4763 CD4023B CD4011BH 15-V CD40 CD4012B CD401
Text: HARRIS SEMICOND SECTOR MME M30527Í D DQ373MS 4 «HAS T - 4 3 'Z .I CD4011B, CD4012B, CD4023B Types HARRIS CMOS NAND GATES Features: High-Voltage Types 2 0 -V o lt Rating Quad 2 Inp ut - CD4011B Dual 4 In p u t-C D 4 0 1 2 B Triple 3 Inp ut — CD4023B • C D 4 0 1 1 B , C D 4 0 1 2 B , and C D 4 0 2 3 B
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M3G227Ã
D0373MS
CD4011B,
CD4012B,
CD4023B
20-Volt
CD4011B
CD4012B
CD4023B
CD40238
cd40128
z4763
CD4011BH
15-V
CD40
CD401
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HMF-03300
Abstract: HMF0330 GAAS FET CROSS REFERENCE
Text: HARRIS MU S E M I C O N D U C T O R HARRIS PRODUCT DATA MbE D • 430221^ GGG0157 3 ■ HMS HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates
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GGG0157
HMF-03300
HMF-03300
HMF0330
GAAS FET CROSS REFERENCE
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