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    M5322000BV Search Results

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    KMM5322000BV

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 M5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7


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    PDF KMM5322000BV/BVG M5322000BV-6 M5322000B KMM5322000BV 20-pin 72-pin 130ns 150ns

    30 pin simm

    Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
    Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM


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    PDF KMM58256CN KMM59256CN KMM532256CV/CVG KMM536256C/CG KMM32512CV/CVG KMM536512C/CG KMM536512CH KMM540512C/CG' KMM540512CM KMM581000C 30 pin simm 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM

    KMM5322000BV-6

    Abstract: KMM5322000BV6 kmm5322000b KMM5322000BV KMM532200 DU26
    Text: KMM53: ’SÀVJlt BV/BVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5322000BV is a 2M bits x 32 Dynam­ ic RAM high density memory module. The Samsung M5322000BV consist of sixteen CMOS 1M x 4 bit


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    PDF KMM53: KMM5322000BV 20-pin 72-pin M5322000BV-6 M5322000BV KMM5322000BV-8 KMM5322000BV-6 KMM5322000BV6 kmm5322000b KMM532200 DU26