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    M58BW016FT Search Results

    M58BW016FT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M58BW016FT STMicroelectronics 16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories Original PDF
    M58BW016FT7T3FT Numonyx 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Original PDF

    M58BW016FT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz

    M58BW016

    Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PQFP80 M58BW016 Q002 M58BW016DT M58BW016FB PQFP80

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80

    Untitled

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB

    M58BW016

    Abstract: No abstract text available
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB M58BW016

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80 56MHZ M58BW016

    Q002

    Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
    Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)


    Original     		PDF M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80 Q002 M58BW016DT M58BW016FB PQFP80