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    Intel 2118

    Abstract: MB811B-10 DIP-16P-M01
    Text: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad­ vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage


    OCR Scan     		PDF 384-BIT MB8118 M88118 16-pin MB8118-10/MB8118-12 16-LEAD IP-16C-C03 DIP-16P-M01 Intel 2118 MB811B-10 DIP-16P-M01