Untitled
Abstract: No abstract text available
Text: MA03D Series Universal input voltage Isolated & Regulated single output AC-DC Converter PRODUCT FEATURES Compact, light Weight Universal input voltage via same terminals Wide input voltage range : 85 to264VAC(120 to370VDC) Efficiency up to 73% o o Operating temperature :-20 C to+85 C
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MA03D
to264VAC
to370VDC)
40-150kHz
000Hours
MA03D-00B03
MA03D-00B05
MA03D-00B09
MA03D
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MMBT3906
Abstract: No abstract text available
Text: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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pn2907
Abstract: No abstract text available
Text: PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information
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PN2907
MMBT2907
PN2907
OT-23
PN2907BU
MMBT2907
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV4102R PNP Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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FJV4102R
OT-23
FJV4102RMTF
OT-23
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SOT-23 2N4403
Abstract: 2N4403
Text: 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package
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2N4403
MMBT4403
OT-23
MMBT4403
2N4403BU
2N4403
2N4403TF
2N4403TFR
SOT-23 2N4403
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Untitled
Abstract: No abstract text available
Text: FJV3110R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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FJV3110R
OT-23
FJV3110RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV4101R PNP Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 4.7 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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FJV4101R
OT-23
FJV4101RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV3115R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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FJV3115R
OT-23
FJV3115RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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FJV3105R
OT-23
FJV3105RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV3104R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 47 kΩ, R2 = 47 kΩ • Complement to FJV4104R Application • Switching Application (Integrated Bias Resistor)
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FJV3104R
FJV4104R
OT-23
FJV3104RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: LM431SA / LM431SB / LM431SC Programmable Shunt Regulator Features Description • • • • The LM431SA / LM431SB / LM431SC are three-terminal the output adjustable regulators with thermal stability over operating temperature range. The output voltage can be set any value between VREF approximately 2.5
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LM431SA
LM431SB
LM431SC
LM431SC
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Untitled
Abstract: No abstract text available
Text: FJV3101R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 4.7 kΩ • Complement to FJV4101R Application • Switching Application (Integrated Bias Resistor)
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FJV3101R
FJV4101R
OT-23
FJV3101RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV4114R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 47 kΩ • Complement to FJV3114R Application • Switching Application (Integrated Bias Resistor)
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FJV4114R
FJV3114R
OT-23
FJV4114RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV3110R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit • Built-in Bias Resistor R = 10 kΩ • Complement to FJV4110R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit
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FJV3110R
FJV4110R
OT-23
FJV3110RMTF
OT-23
FJV3110R
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MMBFJ176 on semiconductor
Abstract: J175 MMBFJ176 6x marking sot-23 p-channel
Text: J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G S SOT-23 D Mark: 6W / 6X / 6Y TO-92 DG S
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MMBFJ175
MMBFJ176
MMBFJ177
OT-23
MMBFJ175
OT-23
MMBFJ176
MMBFJ176 on semiconductor
J175
6x marking sot-23 p-channel
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Untitled
Abstract: No abstract text available
Text: BSR18A PNP General-Purpose Amplifier Description C This device is designed as a general-purpose amplifier for switching applications at collector currents of 10 A to 100 mA. Sourced from process 66. E SOT-23 Mark: T92 B Ordering Information Part Number Marking
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BSR18A
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: MMBT4126 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. E SOT-23 Mark: ZF B Ordering Information Part Number
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MMBT4126
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings
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MMBT3646
OT-23
OT-23
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transistor c-111
Abstract: TRANSISTOR 111
Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a genHigh-Current Gain Bandwidth Product fT : eral-purpose amplifier or switch in applications that
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PN2907A
MMBT2907A
PZT2907A
PN2907A,
MMBT2907A,
PZT2907A
OT-223)
PN2222A,
MMBT2222A,
transistor c-111
TRANSISTOR 111
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Untitled
Abstract: No abstract text available
Text: FJV3113R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 47 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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FJV3113R
OT-23
FJV3113RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV3102R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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FJV3102R
OT-23
FJV3102RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV3103R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 22 kΩ, R2 = 22 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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FJV3103R
OT-23
FJV3103RMTF
OT-23
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Untitled
Abstract: No abstract text available
Text: FJV4113R PNP Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 47 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
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FJV4113R
OT-23
FJV4113RMTF
OT-23
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dual diode m32
Abstract: No abstract text available
Text: LM431SA / LM431SB / LM431SC Programmable Shunt Regulator Features Description • • • • The LM431SA / LM431SB / LM431SC are three-terminal the output adjustable regulators with thermal stability over operating temperature range. The output voltage can be set any value between VREF approximately 2.5
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LM431SA
LM431SB
LM431SC
LM431SC
dual diode m32
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