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Abstract: No abstract text available
Text: MA111 Rectifier Diodes MA2QA02 Tentative Silicon diodes Unit : mm For power rectification 4.4±0.3 ● V R= 600V, IF=1.0A 1 +0.1 0.25–0.05 M Di ain sc te on na tin nc ue e/ d 2 1.2±0.4 1.2±0.4 +0.4 5.0–0.1 ea s ht e v tp is :// it pa fo na llo so win
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MA111
MA2QA02
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Untitled
Abstract: No abstract text available
Text: MA111 Rectifier Diodes MA2QA02 Tentative Silicon diodes Unit : mm For power rectification 4.4±0.3 Mini-power type package (2 pins) ● V R= 600V, IF=1.0A 1 +0.1 0.25–0.05 2.15±0.3 2 1.2±0.4 Parameter Rating Unit 600 V IF(AV) *1 ❈ 11 ❈20.75 A Non-repetitive peak forward surge current
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MA111
MA2QA02
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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OCR Scan
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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