MA42014
Abstract: No abstract text available
Text: MA42014-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)450m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MA42014-509
MA42014
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2N6665
Abstract: MA42001-509 MA42001 MA42010
Text: Silicon Low Noise Bipolar Transistors MA42000 Series Description NPN SILICON PLANAR TRANSISTORS This series of NPN silicon bipolar transistors is designed to provide low noise figures at frequencies from 10 to 750 MHz. These transistors have flat noise figures over a wide
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MA42000
2N6665
MA42001
MA42014
MA42002
MA42004
MA42003
MA42005
MA42006
MA42008
MA42001-509
MA42010
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transistor K 2056
Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz
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Untitled
Abstract: No abstract text available
Text: 11 T> m Sb4E514 MA42000 Series Description 000145D Ö « n i C M/A-COM Silicon Low Noise Bipolar Transistors SEMICOND-iBRLNGTON . T ' 3 I ~ *? NPN SILICON PLANAR TRANSISTORS This series of NPN silicon bipolar transistors is designed to provide low noise figures at frequencies from 10 to 750
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Sb4E514
000145D
MA42000
2N6665
MA42001
MA42014
MA42002
MA42004
MA42003
MA42005
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MA40285
Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
Text: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238
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1N5165
1N5166
1N5167
1N5712
1N5713
1N5767
2N2857
2N3570
2N3571
2N3572
MA40285
ma4882
MA40150
MA46H201
masw2070g1
MA46H206
MA47203
JANTX2N2857
MA4P9
MA40420
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