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Abstract: No abstract text available
Text: MA4ST520B132 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleChip
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MA4ST520B132
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MA4ST534C
Abstract: No abstract text available
Text: UHF, VHF Hyperabrupt Tuning Varactors MA4ST520, MA4ST530 Series V3.00 Case Style See appendix for complete dimensions Features ● ● ● A Superior Ion Implantation Process Results in More Repeatable C-V Characteristics Within Specified Capacitance Tolerances
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MA4ST520,
MA4ST530
MA4ST520
MA4ST534C
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Untitled
Abstract: No abstract text available
Text: /ifo C C M MA4ST520/MA4ST530 Series UHF, VHF Silicon Hyperabrupt Tuning Varactors Features • A SUPERIOR ION IMPLANTATION PROCESS RESULTS IN MORE
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MA4ST520/MA4ST530
MA4ST520
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MA4ST533B
Abstract: No abstract text available
Text: an A M P com pany UHF, VHF Hyperabrupt Tuning Varactors MA4ST520, MA4ST530 Series V3.00 Case Style See appendix for complete dimensions Features • A Superior Ion Implantation Process Results in More Repeatable C-V Characteristics Within Specified Capacitance Tolerances
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OCR Scan
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MA4ST520
MA4ST520,
MA4ST530
MA4ST533B
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Untitled
Abstract: No abstract text available
Text: Æ an A M P c< o m p a n y UHF, VHF Hyperabrupt Tuning Varactors MA4ST520, MA4ST530 Series V3.00 Case Style See appendix for complete dimensions Features • A Superior Ion Implantation Process Results in More Repeatable C-V Characteristics Within Specified
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OCR Scan
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MA4ST520
MA4ST520,
MA4ST530
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