Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel LMBD2838LT1G MA6 3000/Tape&Reel LMBD2838LT3G
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LMBD2837LT1G
LMBD2838LT1G
3000/Tape
LMBD2837LT3G
10000/Tape
LMBD2838LT3G
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SAMSUNG RV410
Abstract: SMB29 isl6260 PC87541 R141 237 000 SCK 054 VARISTOR quanta foxconn R648 PCI7412
Text: 1 2 3 4 5 6 7 8 MA6 BLOCK DIAGRAM CPU Yonah/Merom USB USB4 A 14.318MHz MAX1993 VGACORE (1.2V/NB_CORE/1.25V) PG 3 1394 X1 ICSXXXX 56pins 479 Pins (uPGA) MODEM PCI-E X1 CRT/S-Video CPU CORE ISL6260+6208 POWER 1.2V/44A PG 45 OSC14M HTREFCLK NBSRCCLK, NBSRCCLK#
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318MHz
10/100/1G
MAX1993
56pins
OSC14M
ISL6260
V/44A
MAX8743
1439/Correct
SAMSUNG RV410
SMB29
PC87541
R141 237 000
SCK 054 VARISTOR
quanta
foxconn
R648
PCI7412
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MA6 diode
Abstract: diode G21 LMBD2838LT1 DIODE a5 g21 Transistor lt1 switch LMBD2837LT1 LMBD2837LT1G LMBD2838LT1G a5 marking
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1 LMBD2838LT1 • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel A5 Pb-Free 3000/Tape&Reel LMBD2837LT1 LMBD2837LT1G LMBD2838LT1 LMBD2838LT1G
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LMBD2837LT1
LMBD2838LT1
3000/Tape
LMBD2837LT1G
LMBD2838LT1G
MA6 diode
diode G21
LMBD2838LT1
DIODE a5
g21 Transistor
lt1 switch
LMBD2837LT1
LMBD2837LT1G
LMBD2838LT1G
a5 marking
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MA6 diode
Abstract: LMBD2838LT1G
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel
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LMBD2837LT1G
LMBD2838LT1G
3000/Tape
LMBD2837LT3G
10000/Tape
LMBD2838LT3G
MA6 diode
LMBD2838LT1G
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MA6 diode
Abstract: LMBD2838LT1G LMBD2837LT1G rr 100 ma6 12
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel
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LMBD2837LT1G
LMBD2838LT1G
3000/Tape
LMBD2837LT3G
10000/Tape
LMBD2838LT3G
MA6 diode
LMBD2838LT1G
LMBD2837LT1G
rr 100
ma6 12
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LMBD2838LT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes LMBD2837LT1G S-LMBD2837LT1G LMBD2838LT1G S-LMBD2838LT1G FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring
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LMBD2837LT1G
S-LMBD2837LT1G
LMBD2838LT1G
S-LMBD2838LT1G
AEC-Q101
3000/Tape
LMBD2837LT3G
10000/Tape
LMBD2838LT1G
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FP50R06W2E3 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values "# # $ % &' *+, % 2 % # &. ) *+,3 &'( ) &. ) *+,3 &'( )
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FP50R06W2E3
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FS50R06W1E3 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values #$ $ % & ' * & & $ % = $ > = & #$ $ -./0 '. * 2 +,3 '() * !
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FS50R06W1E3
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1N5158
Abstract: notebook Universal LCD inverter ADP3158 ADP3801 c16 sot-23-6 universal laptop inverter 330kV level logic mosfet transistor so-8 pmt amplifier circuit 1N914
Text: PMT Feb. 2000 12/15/99 9:05 AM Page 1 Power Management The Analog Devices Solutions Bulletin February 2000 In This Issue… Page Intel and ADI team up for portable computing . . . . . . . . . . . . . . .1 Our new ADP3020 high-efficiency switcher saves space and cost
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ADP3020
ADP3421/ADP3410
ADP3610
TSSOP-16
1N5158
notebook Universal LCD inverter
ADP3158
ADP3801
c16 sot-23-6
universal laptop inverter
330kV
level logic mosfet transistor so-8
pmt amplifier circuit
1N914
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Untitled
Abstract: No abstract text available
Text: MMBD2837/8LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MONOLITHIC DUAL SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Rating Characteristic Symbol 2837 2838 Unit Reverse Voltage VR 35 50 Vdc Peak Reverse Voltage
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MMBD2837/8LT1
OT-23
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MMBD2838
Abstract: No abstract text available
Text: Zowie Technology Corporation Monolithic Dual Switching Diode 3 ANODE 1 CATHODE MMBD2838 3 1 2 ANODE 2 SOT-23 MAXIMUM RATINGS Symbol Value Unit Peak Reverse Voltage VRM 75 Vdc D.C Reverse Voltage VR 50 Vdc Peak Forward Current IFM 450 300 mAdc Average Rectified Current
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MMBD2838
OT-23
MMBD2838
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1N4150
Abstract: 1N914 CJ 4148 CJ 4148 1N914/1N4148 YC 746 1N4151 1n914a-1 1N4148 1N4154 1N4448
Text: 1N914 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency
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1N914
DO-34
DO-35
MIL-STD-202E,
SbA766gDrSbA8
1N4150
1N914 CJ 4148
CJ 4148
1N914/1N4148
YC 746
1N4151
1n914a-1
1N4148
1N4154
1N4448
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g211
Abstract: MA6 diode marking G21 g21 Transistor MMBD2837LT1 MMBD2838LT1
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes ANODE 1 3 CATHODE MMBD2837LT1 MMBD2838LT1 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Peak Reverse Voltage D.C Reverse Voltage Symbol V RM VR Value 75 30 50 Unit Vdc Vdc Peak Forward Current I FM
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MMBD2837LT1
MMBD2838LT1
236AB)
g211
MA6 diode
marking G21
g21 Transistor
MMBD2837LT1
MMBD2838LT1
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1N914 CJ 4148
Abstract: No abstract text available
Text: 1N914 THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage
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1N914
DO-34
DO-35
MIL-STD-202E,
SbA766gDrSbA8
1N914 CJ 4148
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Untitled
Abstract: No abstract text available
Text: Monolithic Dual Switching Diodes ANODE 1 3 CATHODE MMBD2837LT1 MMBD2838LT1 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Peak Reverse Voltage D.C Reverse Voltage Symbol V RM VR Value 75 30 50 Unit Vdc Vdc Peak Forward Current I FM mAdc Average Rectified Current
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MMBD2837LT1
MMBD2838LT1
236AB)
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md7130
Abstract: smd DIODE B34 diode u2 a54 smd a60 B49 diode smd B34 diode smd B45 diode smd smd b38 B34 SMD Transistor DP83816
Text: 8 7 6 5 4 3 2 1 D D PME Header PCI CLK 33 Mhz Magnetics PCI BUS C AD(31:0) TP RJ45 C MacPHYTERII DP83816 25 MHz XTAL PCI Interface B EEPROM I'face B BIOS ROM These schematics are provided for reference only. For any designs based on these schematics always contact National Semiconductor Corporation BEFORE initiating PCB
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DP83816
10/100M
001uF
C100p-1808
DP83816
md7130
smd DIODE B34
diode u2 a54
smd a60
B49 diode smd
B34 diode smd
B45 diode smd
smd b38
B34 SMD Transistor
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diode u2 a54
Abstract: diode c25 B49 diode smd Diode 133 B34 smd b38 smd DIODE B34 A29 SMD B45 diode smd DP83816 MA6 diode
Text: 8 7 6 5 4 3 2 1 D D PME Header PCI CLK 33 Mhz Magnetics PCI BUS C AD(31:0) TP C RJ45 MacPHYTERII DP83816 25 MHz XTAL PCI Interface B EEPROM I'face B BIOS ROM SERIAL EEPROM A A National Semiconductor - Wired Communications Group Title 10/100 Mb/s Ethernet MacPHYTERII DP83816 Demo Board (Amber)
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DP83816
DP83816
10/100M
001uF
C100p-1808
diode u2 a54
diode c25
B49 diode smd
Diode 133 B34
smd b38
smd DIODE B34
A29 SMD
B45 diode smd
MA6 diode
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equivalent components of diode ak 03
Abstract: MA6 diode DIODE MH sot23 MMBD2837LT1 MMBD2837LT1G MMBD2838LT1 MMBD2838LT1G SOT-23 code marking mf sot-23 marking code MF ma6 #318
Text: MMBD2837LT1, MMBD2838LT1 Monolithic Dual Switching Diodes Features • Pb−Free Packages are Available ANODE 1 3 CATHODE 2 ANODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Peak Reverse Voltage VRM 75 Vdc D.C. Reverse Voltage VR Vdc 30 50 MMBD2837LT1
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MMBD2837LT1,
MMBD2838LT1
MMBD2837LT1
OT-23
O-236AB)
equivalent components of diode ak 03
MA6 diode
DIODE MH sot23
MMBD2837LT1
MMBD2837LT1G
MMBD2838LT1
MMBD2838LT1G
SOT-23 code marking mf
sot-23 marking code MF
ma6 #318
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Beckman ra6
Abstract: A17 ZENER diode MA6 rs232 driver RM73B3A BLM21A121SP zener rohm C119 C120 DS34C86T R106
Text: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page E D C Original design Rev 1.1: TMROUT0[PIO28] changed to SRDY[PIO35]. Nets on DS34C86T’s changed. Pull-ups and pull-downs added to MACH. Pinouts corrected on diode and MOSFET on USB page.
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AM186CC
186EXP/TIB
74ACT04
16x125
Beckman ra6
A17 ZENER diode
MA6 rs232 driver
RM73B3A
BLM21A121SP
zener rohm
C119
C120
DS34C86T
R106
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBD2837LT1 MMBD2838LT1 Monolithic Dual Switching Diodes MAXIMUM RATINGS EACH DIODE Rating Peak Reverse Voltage D.C. Reverse Voltage Symbol Value Unit VRM 75 Vdc VR 30 50 Vdc IFM 450 300 mAdc IO 150 100 mAdc MMBD2837LT1 MMBD2838LT1 Peak Forward Current
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MMBD2837LT1
MMBD2838LT1
MMBD2838LT1
236AB)
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Zener Diode BA11
Abstract: SFs SOT23-3 zener diode A29 flyback transformer design for mosFET Zener Diode BA19 Beckman ra6 PAH25 74ac126 PAH18 router board r52 hn
Text: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page E Rev 1.0: Original design Rev 1.1: TMROUT0[PIO28] changed to SRDY[PIO35]. Nets on DS34C86T’s changed. Pull-ups and pull-downs added to MACH. Pinouts corrected on diode and MOSFET on USB page.
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Am186CC/CH/CH
AM186CC
186EXP/TIB
Am186CC/CH/CU
T7256
79C32
79C32
16x12
Zener Diode BA11
SFs SOT23-3
zener diode A29
flyback transformer design for mosFET
Zener Diode BA19
Beckman ra6
PAH25
74ac126
PAH18
router board r52 hn
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Untitled
Abstract: No abstract text available
Text: MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236AB
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MMBD2837LT1G,
MMBD2838LT1G,
SMMBD2837LT1G
236AB)
MMBD2838LT1G
MMBD2837LT1/D
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to236
Abstract: MMBD2838LT1G TO236 footprint MMBD2837LT1 MMBD2837LT1G MMBD2838LT1 MA6 diode
Text: MMBD2837LT1G, MMBD2838LT1G Monolithic Dual Switching Diodes Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ANODE 1 3 CATHODE 2 ANODE MAXIMUM RATINGS EACH DIODE Rating Peak Reverse Voltage Symbol Value
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MMBD2837LT1G,
MMBD2838LT1G
MMBD2837LT1G
OT-23
O-236AB)
MMBD2837LT1/D
to236
MMBD2838LT1G
TO236 footprint
MMBD2837LT1
MMBD2837LT1G
MMBD2838LT1
MA6 diode
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes M M BD 2837LT1 M M BD2838LT1 ANODE 3 o — l -W -° CATHODE W 1 0 2 ANODE % MAXIMUM RATINGS EACH DIODE Rating Sym bol Value Vrm 75 Vdc Vr 30 50 Vdc 'fm 450 300 mAdc 'o 150
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OCR Scan
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PDF
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2837LT1
BD2838LT1
MMBD2837LT1
MMBD2838LT1
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