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PER.PIC. MA70013/T+KIT Radio frame; Nissan,Opel,Renault; 2 DIN; black
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MA70013/T+KIT		32		1	1 $47.05 10 $47.05 100 $47.05 1000 $47.05 10000 $47.05	Buy Now
PER.PIC. MA70011-05 Radio frame; Renault; 1 DIN; black
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MA70011-05		5		1	1 $14.88 10 $11.59 100 $11.59 1000 $11.59 10000 $11.59	Buy Now

MA7001 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MA7001		Dynex	Radiation Hard 512x9 Bit FIFO		Original	PDF

MA7001 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MA7001 Abstract: l 0315 Text: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces January 2000 version, DS3519-5.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process	Original	MA7001 512x9 DS3519-5 MA7001 1015n/cm2, l 0315	PDF
Untitled Abstract: No abstract text available Text: GEC PLESSEY S E M I C O N D U C T O R S DS3518-3.2 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's CMOS-SOS high perform ance, radiation hard, 3jim technology. The GPS Silicon-on-Sapphire process provides significant	OCR Scan	DS3518-3 MA7001 MA7001 1015n/cm2, MIL-STD-883 1x105 1x1012 1x1015 37bflS22	PDF
Untitled Abstract: No abstract text available Text: M GEC PLESS EY S E M I C O N D U C T O R S D S 3 5 1 8 -2 .4 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's C M O S -S O S high p e rfo rm a n c e , ra d ia tio n ha rd, 3n.m technology. The GPS Silicon-on-Sapphire process provides significant	OCR Scan	MA7001 MA7001 1015n/cma, MIL-STD-883 1x105 37bflS22	PDF
GEC 44 3A Abstract: l 0315 MA7001 MAX7001 Text: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces January 2000 version, DS3519-5.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process	Original	MA7001 512x9 DS3519-5 MA7001 1015n/cm2, GEC 44 3A l 0315 MAX7001	PDF
MA7001 Abstract: MAX7001 GEC 44 3A Text: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces June 1999 version, DS3519-4.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process	Original	MA7001 512x9 DS3519-4 MA7001 1015n/cm2, MAX7001 GEC 44 3A	PDF
UPA76ha Abstract: 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009 Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ic Max (A) fT (Hz) PD Max (W) Mati. Description Package Style NPN Monolithic Pairs, (Co nt' d) 5 10 BFY83 BFY83 BFY83 2N3517 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 ~S~;:~A 15	Original	BFY83 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009	PDF
Untitled Abstract: No abstract text available Text: GEC P L E SS E Y S I M I . O N I> Ii ( I ( K MA °1 Radiation Hard 5 1 2 x 9 Bit FIFO s Sn0 0 0 FD S/2 Issue 2.4 December 1990 Features D a ta In p u ts (D 0-D *) • Radiation hard C M O S -S O S technology A h W rite C on trol • Fast access time 60ns typical	OCR Scan	10errors/bitday	PDF